JPS5934626A - 半導体膜形成方法 - Google Patents

半導体膜形成方法

Info

Publication number
JPS5934626A
JPS5934626A JP57143995A JP14399582A JPS5934626A JP S5934626 A JPS5934626 A JP S5934626A JP 57143995 A JP57143995 A JP 57143995A JP 14399582 A JP14399582 A JP 14399582A JP S5934626 A JPS5934626 A JP S5934626A
Authority
JP
Japan
Prior art keywords
layer
film
single crystal
electron beam
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57143995A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0368532B2 (enExample
Inventor
Kenji Shibata
健二 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57143995A priority Critical patent/JPS5934626A/ja
Publication of JPS5934626A publication Critical patent/JPS5934626A/ja
Publication of JPH0368532B2 publication Critical patent/JPH0368532B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/2926—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H10P14/2905—
    • H10P14/3238—
    • H10P14/3411—
    • H10P14/3418—
    • H10P14/3421—
    • H10P14/3422—
    • H10P14/3456—
    • H10P14/3818—
    • H10P14/382—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
JP57143995A 1982-08-21 1982-08-21 半導体膜形成方法 Granted JPS5934626A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57143995A JPS5934626A (ja) 1982-08-21 1982-08-21 半導体膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57143995A JPS5934626A (ja) 1982-08-21 1982-08-21 半導体膜形成方法

Publications (2)

Publication Number Publication Date
JPS5934626A true JPS5934626A (ja) 1984-02-25
JPH0368532B2 JPH0368532B2 (enExample) 1991-10-28

Family

ID=15351858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57143995A Granted JPS5934626A (ja) 1982-08-21 1982-08-21 半導体膜形成方法

Country Status (1)

Country Link
JP (1) JPS5934626A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63300510A (ja) * 1987-05-30 1988-12-07 Agency Of Ind Science & Technol 積層型半導体装置
JP2008136406A (ja) * 2006-11-30 2008-06-19 Daiwa Seiko Inc 釣用バック

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63300510A (ja) * 1987-05-30 1988-12-07 Agency Of Ind Science & Technol 積層型半導体装置
JP2008136406A (ja) * 2006-11-30 2008-06-19 Daiwa Seiko Inc 釣用バック

Also Published As

Publication number Publication date
JPH0368532B2 (enExample) 1991-10-28

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