JPS5932041B2 - thin film thermistor - Google Patents

thin film thermistor

Info

Publication number
JPS5932041B2
JPS5932041B2 JP12105879A JP12105879A JPS5932041B2 JP S5932041 B2 JPS5932041 B2 JP S5932041B2 JP 12105879 A JP12105879 A JP 12105879A JP 12105879 A JP12105879 A JP 12105879A JP S5932041 B2 JPS5932041 B2 JP S5932041B2
Authority
JP
Japan
Prior art keywords
film
thin film
temperature
electrode
thermistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12105879A
Other languages
Japanese (ja)
Other versions
JPS5645001A (en
Inventor
彪 長井
一志 山本
郁夫 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP12105879A priority Critical patent/JPS5932041B2/en
Publication of JPS5645001A publication Critical patent/JPS5645001A/en
Publication of JPS5932041B2 publication Critical patent/JPS5932041B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は薄膜サーミスタ、特に対象物との機械的な接触
を通して熱を感じる様構成された測温体のサーミスタに
関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film thermistor, and more particularly to a thermometer thermistor configured to sense heat through mechanical contact with an object.

この種測温体は、たとえば調理容器の外壁、あるいは石
油燃焼機器の気化器の外壁と接触して、調理容器内部の
調理物の温度あるいは気化器内での石油気化温度を検出
することに用いられる。
This type of thermometer is used, for example, to detect the temperature of food inside the cooking container or the temperature of oil vaporization in the vaporizer by coming into contact with the outer wall of the cooking container or the outer wall of the vaporizer of oil-burning equipment. It will be done.

この種測温体は通常第1図に示す如き構造、使われ方を
している。すなわち測温体1は、たとえば調理容器の外
壁10と接触する。通常測温体1は保護管2、サーミス
タ・チップ3および保護管2とサーミスタ・チップ3と
の接着層4から成り、更にサーミスタ・チップ3は通常
平板状絶縁性基板5の一方の表面に電極膜6、感温抵抗
体膜Tを形成して構成される。実際には更に電極膜6に
リード線8を接続し、リード線8を通して感温抵抗体T
の抵抗値、すなわち温度、を検出する。この種サーミス
タ・チップ3は、前述の如く平板状絶縁基板5、たとえ
ばアルミナ、ベリリア、ムライトなどのセラミックある
いは硼硅酸系硝子、の一方の表面に電極膜6、たとえば
Ag−Pd、Au−Pt、Au−Pd、Au、Ag、P
tなどの厚膜電極、あるいはCr−Au3Cr−Cu3
Cr−Ptなどの積層薄膜電極、感温抵抗体膜T、たと
えばGe、Si、SiC、あるいはFe−Cr−Co−
Mnなどの複合酸化物から成る厚膜、薄膜抵抗体、を形
成して構成される。しかしこの場合サーミスタチップ3
を保護管2、たとえばステンレス管、に接着する時以下
に示す如き欠点があつた。すなわち接着層4に有機物系
接着剤、たとえばエポキシ樹脂系、シアノ・アクリレー
ト系接着剤、を用いた場合、容易に安定した接着性を得
ることができるが、耐熱性が60〜150℃程度しかな
いという欠点があつた。この種測温体を調理器、燃焼器
に用いた場合、通常300〜600℃の耐熱性が要求さ
れる。
This type of thermometer usually has a structure and usage as shown in FIG. That is, the temperature measuring body 1 contacts, for example, the outer wall 10 of the cooking container. Normally, the temperature measuring element 1 consists of a protection tube 2, a thermistor chip 3, and an adhesive layer 4 between the protection tube 2 and the thermistor chip 3, and the thermistor chip 3 is usually provided with an electrode on one surface of a flat insulating substrate 5. It is constructed by forming a film 6 and a temperature sensitive resistor film T. Actually, a lead wire 8 is further connected to the electrode film 6, and a temperature sensitive resistor T is connected through the lead wire 8.
Detects the resistance value, or temperature. As described above, this type of thermistor chip 3 has an electrode film 6 on one surface of a flat insulating substrate 5, such as ceramic such as alumina, beryllia, mullite, or borosilicate glass. , Au-Pd, Au, Ag, P
Thick film electrode such as t or Cr-Au3Cr-Cu3
Laminated thin film electrode such as Cr-Pt, temperature sensitive resistor film T, such as Ge, Si, SiC, or Fe-Cr-Co-
It is constructed by forming a thick film or thin film resistor made of a composite oxide such as Mn. However, in this case the thermistor chip 3
When bonding the protective tube 2 to a stainless steel tube, for example, the following drawbacks occurred. That is, when an organic adhesive such as an epoxy resin adhesive or a cyanoacrylate adhesive is used for the adhesive layer 4, stable adhesion can be easily obtained, but the heat resistance is only about 60 to 150°C. There was a drawback. When this type of thermometer is used in a cooker or a combustor, heat resistance of 300 to 600°C is usually required.

他方接着層4に無機質系接着剤、たとえばリン酸アルミ
ナ系、低融点硝子系、を用いた場合、耐熱性の高い接着
性を得られるが、熱的あるいは機械的衝撃に弱い、安定
した接着性が得られないという・ 欠点があつた。また
電極膜6、前述の如き厚膜、薄膜電極、にリード線8を
接続する場合、電子部品の接続に一般的に用いられる半
田付法は比較的太いリード線、たとえば0.2〜0.8
wm0の銅,ニツケル線を直接電極膜6に接続できる利
点があるが、耐熱性が100〜200℃程度しかなぃと
いう欠点があつた。
On the other hand, if an inorganic adhesive such as an alumina phosphate adhesive or a low melting point glass adhesive is used for the adhesive layer 4, it is possible to obtain adhesive properties with high heat resistance, but stable adhesive properties that are susceptible to thermal or mechanical shocks are obtained. There was a drawback that it was not possible to obtain Further, when connecting the lead wire 8 to the electrode film 6, such as the above-mentioned thick film or thin film electrode, the soldering method generally used for connecting electronic components uses a relatively thick lead wire, for example, 0.2 to 0.0 mm. 8
Although there is an advantage in that a wm0 copper or nickel wire can be directly connected to the electrode film 6, there is a disadvantage in that the heat resistance is only about 100 to 200°C.

他方溶接法は、耐熱性の高い接続を得られるが、電極膜
6の厚さが精々15〜20μmであるので熱容量の小さ
な細線、たとえば0.02〜0.2m0の金線、白金線
、アルミニウム線、を電極膜6に溶接していた。しかし
この場合溶接面積が必然的に小さくなる結果溶接強度も
通常数7〜数107程度と小さい欠点があつた。この欠
点を補う為に溶接部を電気絶縁性セメント、たとえばリ
ン酸アルミナ系,低融点硝子系,で被覆する構造がしば
しば用いられる。しかしこの場合構造が複雑になる、あ
るいはコストが高くなるなどの欠点が派生した。更に前
記細線はその機械的強度が小さい、価格が高い、取扱い
が困難などの理由により実用上リード線8として使用で
きない。この為通常実用上問題のない太いリード線を別
個に準備し、前記細線と太いリード線とを相互に溶接し
て使用しなければならない。
On the other hand, the welding method can provide a connection with high heat resistance, but since the thickness of the electrode film 6 is at most 15 to 20 μm, thin wires with small heat capacity, such as 0.02 to 0.2 m0 gold wire, platinum wire, aluminum wire, etc. can be used. The wire was welded to the electrode film 6. However, in this case, the welding area inevitably becomes smaller, resulting in a disadvantage that the welding strength is usually on the order of several 7 to several 107. In order to compensate for this drawback, a structure is often used in which the welded part is covered with an electrically insulating cement, such as an alumina phosphate cement or a low melting point glass cement. However, in this case, there were drawbacks such as a complicated structure and increased cost. Furthermore, the thin wire cannot be practically used as the lead wire 8 because of its low mechanical strength, high price, and difficulty in handling. For this reason, it is necessary to separately prepare a thick lead wire, which usually poses no problem in practical use, and to use the thin wire and the thick lead wire by welding them together.

この結果構造が複雑になるあるいはコストが高くなるな
どの欠点が派生していた。
As a result, disadvantages such as a complicated structure and high cost arise.

本発明はこれ等従来の欠点を解消した薄膜サーミスタ・
チツプを提供するもので、その要旨は第 二2図に示す
如く、平板状絶縁基板5の一方の表面に電極膜6、感温
抵抗体膜7を形成して成る薄膜サーミスタ・チツプ3に
おいて、少なくとも電極膜6にモリブデンもしくはタン
グステン・メタライズ膜を用い、且つ前記平板状絶縁基
板5の他の こ表面に前記メタライズ被覆膜9を全面に
形成することにある。
The present invention is a thin film thermistor that eliminates these conventional drawbacks.
As shown in FIG. 22, the thin film thermistor chip 3 consists of an electrode film 6 and a temperature sensitive resistor film 7 formed on one surface of a flat insulating substrate 5. A molybdenum or tungsten metallized film is used at least for the electrode film 6, and the metallized coating film 9 is formed entirely on the other surface of the flat insulating substrate 5.

以下、本発明の一実施例を説明する。An embodiment of the present invention will be described below.

本発明の薄膜サーミスタ・チツプ3は前述の如くモリブ
デンもしくはタングステン・メタライズ5被覆膜9が平
板状絶縁基板5の他の表面に全面に形成されているので
、第2図に示す如く保護管2、たとえばステンレス管に
本薄膜サーミスタ・チツプ3をロウ材接着層4で接着す
ることができる。
As mentioned above, the thin film thermistor chip 3 of the present invention has the molybdenum or tungsten metallized 5 coating film 9 formed entirely on the other surface of the flat insulating substrate 5. For example, the present thin film thermistor chip 3 can be bonded to a stainless steel pipe using a brazing material adhesive layer 4.

前記メタライズ被覆膜9および保護管2、たとえ 4ば
ステンレス管、ともロウ材は滑らかに流動し、安定な接
着性が得られるのみならず、その耐熱性もロウ材を適切
に選択することにより300〜600℃程度を実現する
ことができる。ステンレス保護管2に本薄膜サーミスタ
・チツプ3を銀ロウ材(液相線温度〜700℃)でロウ
付接着したところ、銀ロウ材は滑らかに流動し、引張強
度10〜50Kf/Cdが得られた。
In both the metallized coating film 9 and the protective tube 2, for example, a stainless steel tube 4, the brazing material not only flows smoothly and provides stable adhesion, but also has heat resistance that can be improved by appropriately selecting the brazing material. A temperature of about 300 to 600°C can be achieved. When this thin film thermistor chip 3 was soldered and bonded to the stainless steel protection tube 2 with silver solder (liquidus temperature ~700°C), the silver solder flowed smoothly and a tensile strength of 10 to 50 Kf/Cd was obtained. Ta.

前記メタライズ被覆膜9の面積は通常10〜50mdで
あるので、実際の引張強度は1〜25Kf程度であり、
充分な実用性を有している。また液相線程度〜780℃
の銀ロウ材,〜930℃のニツケル系ロウ材、あるいは
〜1010℃の金ロウ材でステンレス保護管2と本サー
ミスタ・チツプ3とをロウ付接着したところ前述と同様
の引張強度が得られた。
Since the area of the metallized coating film 9 is usually 10 to 50 md, the actual tensile strength is about 1 to 25 Kf,
It has sufficient practicality. Also, around liquidus line ~780℃
When the stainless steel protective tube 2 and the thermistor chip 3 were bonded together using silver brazing material at ~930°C, nickel-based brazing material at ~930°C, or gold soldering material at ~1010°C, the same tensile strength as described above was obtained. .

このようにステンレス保護管2に本薄膜サーミスタ・チ
ツプ3をロウ付接続したものを、空気中300〜600
℃で連続100〜1000時間放置試験、あるいは空気
中300〜600℃,15分放置後室温,15分放置す
ることを1サイクルとして100〜1000サイクルの
熱サイクル試験をしてもその引張強度は殆んど低下しな
かつた。以上の如く本薄膜サーミスタ・チツプ3は、保
護管2とロウ付することができるので、容易に安定な接
着性を得られるのみならずロウ材の適切な選択により3
00〜600℃の耐熱性を得ることができ、従つて従来
の欠点を解消できる。
In this way, the thin film thermistor chip 3 is connected to the stainless steel protection tube 2 by brazing in air at 300 to 600
Tensile strength remains almost unchanged even if a thermal cycle test is performed for 100 to 1000 cycles, where one cycle is 100 to 1000 hours of continuous standing at 300 to 600°C in air, followed by 15 minutes at room temperature. It never decreased. As described above, since the present thin film thermistor chip 3 can be brazed to the protective tube 2, not only can stable adhesion be easily obtained, but also the chip can
It is possible to obtain heat resistance of 00 to 600°C, and therefore, the conventional drawbacks can be overcome.

また本薄膜サーミスタ・チツプ3は電極膜6にも前記メ
タライズ膜を用いているので、前記メタライズ電極膜6
に太いリード線8を直接ロウ付することができる。
Moreover, since the present thin film thermistor chip 3 uses the metallized film for the electrode film 6, the metallized electrode film 6
A thick lead wire 8 can be brazed directly to the holder.

従つて前述の保護管2と本薄膜サーミスタ・チツプ3と
のロウ付接着と同様、容易に安定な接着性を得られるの
みならずロウ材の適切な選択により300〜600℃の
耐熱性を得ることができる。
Therefore, like the soldering of the protective tube 2 and the present thin film thermistor chip 3 described above, not only can stable adhesiveness be easily obtained, but also heat resistance of 300 to 600°C can be obtained by appropriately selecting the brazing material. be able to.

このように本薄膜サーミスタ・チツプ3は簡単な構造で
高耐熱性リード線取出しを実現でき、従来の欠点を解消
することができる。本薄膜サーミスタ・チツプ3は感温
抵抗体膜7にSiC膜を用いた場合、特にその有用性が
大きい。
In this way, the present thin film thermistor chip 3 has a simple structure and can realize highly heat-resistant lead wire extraction, thereby eliminating the drawbacks of the conventional structure. This thin film thermistor chip 3 is particularly useful when a SiC film is used for the temperature sensitive resistor film 7.

すなわちSiC感温抵抗体膜7は広い使用温度範囲(3
0〜400℃)を有し、他方で高耐熱性(空気中300
〜600℃)を有している。従つて前述の如く容易に安
定な接着性を得られるのみならず他方で300〜600
℃の耐熱接着性の得られる本薄膜サーミスタ・チツプ3
にSiC感温抵抗体膜Tを用いた場合、SiC感温抵抗
体膜7の特性を最大限に引き出すことができる。なおS
iC感温抵抗体膜7に高耐熱性を付与する為に通常空気
中で500〜800℃で1〜100hrsアニール処理
をする必要がある。
In other words, the SiC temperature-sensitive resistor film 7 can be used in a wide operating temperature range (3
0~400℃), and high heat resistance (300℃ in air).
~600°C). Therefore, as mentioned above, not only can stable adhesion be easily obtained, but also adhesive strength of 300 to 600
This thin film thermistor chip 3 provides heat-resistant adhesion at ℃
When the SiC temperature sensitive resistor film T is used, the characteristics of the SiC temperature sensitive resistor film 7 can be maximized. Furthermore, S
In order to impart high heat resistance to the iC temperature sensitive resistor film 7, it is usually necessary to perform an annealing treatment in air at 500 to 800° C. for 1 to 100 hrs.

これはSiC感温抵抗体膜7の初期的特性変化、主とし
て抵抗値変化、をアニール処理により充分進行せしめ、
その後の熱的抵抗値変化を安定化せしめることを目的と
している。このような空気中アニール処理により前記メ
タライズ電極膜6あるいは被覆膜9は酸化され、ロウ付
できなくなる。
This is because the initial characteristic change, mainly the resistance value change, of the SiC temperature-sensitive resistor film 7 is sufficiently progressed by the annealing treatment.
The purpose is to stabilize subsequent changes in thermal resistance. Such in-air annealing treatment oxidizes the metallized electrode film 6 or coating film 9, making it impossible to braze it.

しかしこの場合前記メタライズ電極膜6あるいは被覆膜
9上に酸化防止膜、たとえばAg−Pd,Au−Piな
どの厚膜電極膜、を形成することにより、前記酸化を防
止することができる。また前述の如きロウ付をする際に
も前記メタライズ電極膜6あるいは被覆膜9は酸化され
る。この場合にはロウ付時の雰囲気を真空もしくは不活
性ガス雰囲気にすることにより酸化を防ぐことができる
。また前記メタライズ被覆膜9は平板状絶縁基板5の他
の表面に全面に形成するとして説明してきたが、たとえ
ば第3図に示す如く平板状絶縁基板5の他の表面の周辺
部のみに前記メタライズ被覆膜9を形成し、他方で保護
管2の部に小穴を設け、その小穴の形状を前記メタライ
ズ被覆膜9のパターンに重なり合う如く成形せしめ、両
者をロウ付するように構成しても良いことはもちろんで
ある。
However, in this case, the oxidation can be prevented by forming an oxidation prevention film, for example, a thick electrode film of Ag-Pd, Au-Pi, etc., on the metallized electrode film 6 or the coating film 9. Also, the metallized electrode film 6 or the coating film 9 is oxidized during brazing as described above. In this case, oxidation can be prevented by setting the atmosphere during brazing to a vacuum or inert gas atmosphere. Although the metallized coating film 9 has been described as being formed on the entire other surface of the flat insulating substrate 5, for example, as shown in FIG. A metallized coating film 9 is formed, a small hole is formed in the protection tube 2, the shape of the small hole is formed so as to overlap the pattern of the metallized coating film 9, and both are brazed together. Of course, it is also a good thing.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の薄膜サーミスタの断面図、第2図は本発
明の一実施例における薄膜サーミスタの断面図、第3図
は同他の実施例における薄膜サーミスタの断面図である
。 3・・・・・・サーミスタ・チツプ、5・・・・・・平
板状絶縁基板、6・・・・・・電極膜、7・・・・・・
感温抵抗体膜、8・・・・・・リード線、9・・・・・
・メタライズ被覆膜。
FIG. 1 is a sectional view of a conventional thin film thermistor, FIG. 2 is a sectional view of a thin film thermistor according to an embodiment of the present invention, and FIG. 3 is a sectional view of a thin film thermistor according to another embodiment. 3... Thermistor chip, 5... Flat insulating substrate, 6... Electrode film, 7...
Temperature-sensitive resistor membrane, 8...Lead wire, 9...
・Metallized coating film.

Claims (1)

【特許請求の範囲】 1 平板状絶縁基板の一方の表面に電極膜、感温抵抗体
を形成して成る薄膜サーミスタチップにおいて、少なく
とも電極膜にモリブデンもしくはタングステンメタライ
ズ電極膜を用い、かつ前記平板状絶縁基板の他の表面に
前記メタライズ被覆膜を全面に形成したことを特徴とす
る薄膜サーミスタ。 2 少なくとも感温抵抗体膜にSiC膜を用いたことを
特徴とする特許請求の範囲第1項記載の薄膜サーミスタ
[Scope of Claims] 1. A thin film thermistor chip comprising an electrode film and a temperature-sensitive resistor formed on one surface of a flat insulating substrate, wherein at least a molybdenum or tungsten metallized electrode film is used as the electrode film, and A thin film thermistor characterized in that the metallized coating film is formed entirely on the other surface of an insulating substrate. 2. The thin film thermistor according to claim 1, characterized in that a SiC film is used for at least the temperature sensitive resistor film.
JP12105879A 1979-09-20 1979-09-20 thin film thermistor Expired JPS5932041B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12105879A JPS5932041B2 (en) 1979-09-20 1979-09-20 thin film thermistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12105879A JPS5932041B2 (en) 1979-09-20 1979-09-20 thin film thermistor

Publications (2)

Publication Number Publication Date
JPS5645001A JPS5645001A (en) 1981-04-24
JPS5932041B2 true JPS5932041B2 (en) 1984-08-06

Family

ID=14801788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12105879A Expired JPS5932041B2 (en) 1979-09-20 1979-09-20 thin film thermistor

Country Status (1)

Country Link
JP (1) JPS5932041B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61206025U (en) * 1985-06-14 1986-12-26

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61206025U (en) * 1985-06-14 1986-12-26

Also Published As

Publication number Publication date
JPS5645001A (en) 1981-04-24

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