JPH06337229A - Temperature detection element and applied element thereof - Google Patents

Temperature detection element and applied element thereof

Info

Publication number
JPH06337229A
JPH06337229A JP5126639A JP12663993A JPH06337229A JP H06337229 A JPH06337229 A JP H06337229A JP 5126639 A JP5126639 A JP 5126639A JP 12663993 A JP12663993 A JP 12663993A JP H06337229 A JPH06337229 A JP H06337229A
Authority
JP
Japan
Prior art keywords
temperature detecting
wire
sensitive resistance
thin film
superelastic alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5126639A
Other languages
Japanese (ja)
Other versions
JP3277471B2 (en
Inventor
Mitsuyuki Takeda
光之 武田
Michio Nemoto
道夫 根本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP12663993A priority Critical patent/JP3277471B2/en
Publication of JPH06337229A publication Critical patent/JPH06337229A/en
Application granted granted Critical
Publication of JP3277471B2 publication Critical patent/JP3277471B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To reduce the irregularity of thermal characteristics by enhancing the mechanical strength of a temp. detection element. CONSTITUTION:A membrane temp.-sensitive resistance element is constituted by forming a membrane temp.-sensitive resistance part 11 and an electrode part 12 on an insulating substrate 13 and held on a stem 6 by ultra-elastic alloy wire materials 2. The electrode part 12 is electrically connected to the lead wires 7 held to the stem 6 by thin wires 3. Since the membrane temp.- sensitive resistance element 1 is held by the ultra-elastic alloy wire materials 2, the leakage of heat from the membrane temp.-sensitive resistance element 1 to the stem 6 can be reduced and the mechanical strength of the membrane temp.-sensitive resistance element 1 is held.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、各種家電機器(電子レ
ンジあるいは他の調理器、又は空調機等)あるいは自動
車等に使用される温度検出素子に関し、さらに、この温
度検出素子を用いた応用素子(湿度検出素子(熱伝導
式)あるいは風速検知素子)に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature detecting element used in various home appliances (microwave ovens, other cooking devices, air conditioners, etc.), automobiles, and the like, and further application using this temperature detecting element. The present invention relates to an element (humidity detecting element (heat conduction type) or wind speed detecting element).

【0002】[0002]

【従来の技術】まず、従来の温度検出素子について図6
を参照して概説する。
2. Description of the Related Art First, a conventional temperature detecting element is shown in FIG.
For an overview.

【0003】薄膜感温抵抗素子1は、アルミナ等の絶縁
基板13上に白金等の薄膜感温抵抗部11を形成するこ
とによって構成されている。薄膜感温抵抗素子1はその
端部で受け台111と耐熱性接着剤4によって接着され
ている。一方、受け台111の底部には、ハメチックシ
ールのステム6がその平坦部分で接着、その他の手段に
より固定されている。
The thin film temperature sensitive resistance element 1 is constructed by forming a thin film temperature sensitive resistance portion 11 of platinum or the like on an insulating substrate 13 of alumina or the like. The thin film temperature sensitive resistance element 1 is adhered to the pedestal 111 at its end portion by the heat resistant adhesive 4. On the other hand, on the bottom of the pedestal 111, a stem 6 of a hamematic seal is fixed at its flat portion by adhesion or other means.

【0004】薄膜感温抵抗素子1には薄膜感温抵抗部1
1に接続された一対の電極部12が形成され、電極部1
2とリード線7との電気的接続は通常の細線(Cuある
いはAu線)をハンダ付け接続あるいはスポット溶接し
て実施される。薄膜感温抵抗部11を白金薄膜抵抗体と
した場合、白金薄膜抵抗体の抵抗値の温度係数は約35
00〜3800ppm/℃であり、この白金薄膜抵抗体
の抵抗変化に基づく電圧変化を後段の回路部(図示せ
ず)により増幅する。これによって、所望の温度素子あ
るいは定点の温度検出及び制御が行なわれる。
The thin film temperature sensitive resistance element 1 includes a thin film temperature sensitive resistance portion 1
A pair of electrode portions 12 connected to the
The electrical connection between the lead wire 2 and the lead wire 7 is made by soldering or spot welding a normal thin wire (Cu or Au wire). When the thin film temperature sensitive resistor 11 is a platinum thin film resistor, the temperature coefficient of resistance of the platinum thin film resistor is about 35.
The voltage change is from 0 to 3800 ppm / ° C., and the voltage change based on the resistance change of the platinum thin film resistor is amplified by the circuit unit (not shown) in the subsequent stage. As a result, desired temperature element or fixed point temperature detection and control are performed.

【0005】従来の温度検出素子の拡張的応用の従来例
として、熱伝導式湿度検出素子がある。その原理は、図
7に示すように、互いに抵抗値の接近した2個の素子を
用いて、その内の一方は小穴9が形成されたキャップ1
4を被せてのハメチックシール81(抵抗値RS1)と
し、他方についてはキャップ15を被せてハメチックシ
ール82(気密シール状態としている、抵抗値R0 )と
する。そして、図8に示すように外部抵抗R1 ,R2
よってブリッジ回路を形成する。
As a conventional example of the expanded application of the conventional temperature detecting element, there is a heat conduction type humidity detecting element. As shown in FIG. 7, the principle is to use two elements whose resistance values are close to each other, one of which is a cap 1 in which a small hole 9 is formed.
4 is used as a hamematic seal 81 (resistance value R S1 ), and the other is covered with a cap 15 as a hamematic seal 82 (in a hermetically sealed state, resistance value R 0 ). Then, as shown in FIG. 8, a bridge circuit is formed by the external resistors R 1 and R 2 .

【0006】2個の温度検出素子には素子を発熱状態と
するだけの通電電流が通電される。ハメチックシール8
1内は小穴9によって外気と連通しているからハメチッ
クシール81の内部は外気と同一の湿度となっており、
湿度変化によって大気における熱伝導率が変化し、これ
によって、ブリッジ回路から湿度変化に応じた出力電圧
(Vout)が検出される。
An energizing current is supplied to the two temperature detecting elements to heat the two elements. Hammatic seal 8
Since the inside of 1 is communicated with the outside air through the small hole 9, the inside of the hametic seal 81 has the same humidity as the outside air,
The thermal conductivity in the atmosphere changes due to the change in humidity, whereby the output voltage (Vout) corresponding to the change in humidity is detected from the bridge circuit.

【0007】[0007]

【発明が解決しようとする課題】ところで、上述の温度
検出素子では次の問題点があり、その主たる問題点は薄
膜感温抵抗素子の接合部分近傍に関するものである。
By the way, the above-mentioned temperature detecting element has the following problems, and the main problem is related to the vicinity of the joint portion of the thin film temperature sensitive resistance element.

【0008】(1)受け台111は、熱伝導の比較的小
さいステンレス薄板などの材質が使用され凹型の形状さ
れているが、薄膜感温抵抗素子1と受け台111との接
着接合において、形状的な相対関係に起因して、接着剤
を薄膜感温抵抗素子1の端部に安定に均一に塗布するこ
とが非常に困難であり、接着剤の塗布状態が大きくばら
つき、従って、素子の熱的特性が大きくばらつくという
問題点がある(特に接着剤のバラツキに起因した薄膜感
温抵抗素子1からの受け台111側へもれる熱量のばら
つきが大きな問題であり、特に湿度センサとしての用途
の場合に、湿度検出特性の大幅なばらつきとなる)。
(1) The pedestal 111 is formed in a concave shape by using a material such as a stainless steel plate having a relatively small heat conduction, and is shaped by the adhesive bonding between the thin film temperature-sensitive resistance element 1 and the pedestal 111. It is very difficult to stably and evenly apply the adhesive to the end portions of the thin film temperature-sensitive resistance element 1 due to the relative relationship between the elements, and the application state of the adhesive greatly varies, and accordingly, the heat of the element is reduced. There is a problem that the thermal characteristics greatly vary (especially, the variation in the amount of heat leaked from the thin film temperature-sensitive resistance element 1 to the pedestal 111 side due to the variation in the adhesive is a great problem, and particularly in the application as a humidity sensor In this case, the humidity detection characteristics will vary greatly).

【0009】(2)受け台111は、薄膜感温抵抗素子
1からステム6上への熱のもれを極力少なくするため、
その板厚を薄く設定する必要があり(例えば、板厚0.
05〜0.1mm)、このため、機械的強度が弱く、製
造組立時に、ハンドリング等によって変形等を起しやす
いという問題点がある。
(2) The pedestal 111 minimizes heat leakage from the thin film temperature-sensitive resistance element 1 onto the stem 6,
It is necessary to set the plate thickness thin (for example, plate thickness 0.
Therefore, there is a problem in that mechanical strength is weak and deformation or the like is likely to occur due to handling or the like during manufacturing and assembly.

【0010】本発明の目的は熱的特性のばらつきの極め
て少ない温度検出素子及びその応用素子を提供すること
にある。
An object of the present invention is to provide a temperature detecting element and its applied element in which variations in thermal characteristics are extremely small.

【0011】本発明の他の目的は機械的強度の強い温度
検出素子及びその応用素子を提供することにある。
Another object of the present invention is to provide a temperature detecting element having high mechanical strength and its applied element.

【0012】[0012]

【課題を解決するための手段】本発明によれば、絶縁基
板と該絶縁基板上に形成された薄膜感温抵抗部及び電極
部とを有する薄膜感温抵抗素子と、リード線を備えるス
テムと、前記薄膜感温抵抗素子を前記ステムの上方で保
持するための線材と、前記電極部と前記リード線7とを
電気的に接続する細線とを有し、前記線材は超弾性合金
線材であることを特徴とする温度検出素子が得られる。
According to the present invention, a thin film temperature sensitive resistance element having an insulating substrate, a thin film temperature sensitive resistance portion and an electrode portion formed on the insulating substrate, and a stem having a lead wire are provided. A wire for holding the thin-film temperature-sensitive resistance element above the stem, and a thin wire for electrically connecting the electrode portion and the lead wire 7, the wire being a superelastic alloy wire. A temperature detecting element characterized by the above is obtained.

【0013】[0013]

【作用】本発明では薄膜感温抵抗素子を超弾性合金線材
で保持するようにしたから、受け台を使用する場合に比
べて薄膜感温抵抗素子からステムへの熱伝導による熱の
もれを減少させることができ、さらに、薄膜感温抵抗素
子の機械的保持の安定性も格段に改善される。
In the present invention, since the thin film temperature sensitive resistance element is held by the superelastic alloy wire, heat leakage due to the heat conduction from the thin film temperature sensitive resistance element to the stem is higher than in the case where the pedestal is used. In addition, the stability of the mechanical holding of the thin film temperature sensitive resistance element is significantly improved.

【0014】[0014]

【実施例】以下本発明について実施例によって説明す
る。
EXAMPLES The present invention will be described below with reference to examples.

【0015】図1を参照して、図示の温度検出素子は薄
膜感温抵抗素子1を備えており、薄膜感温抵抗素子1は
アルミナ等の絶縁基板13上に蒸着あるいはスパッタな
どによって薄膜感温抵抗部11及び電極部12を形成す
ることによって作成される。薄膜感温抵抗素子1には絶
縁基板13の裏面の両端近傍において耐熱性接着剤4
(例えばジロン系あるいはセメント系の接着剤使用)が
塗布とれ、これによって絶縁基板13は超弾性合金線材
2の一端部と機械的に接合されている。一方、超弾性合
金線材2の他方の端部はステム6の上面平坦部分に固定
部材5(例えば、エポキシ樹脂製)によって保持され、
前述したように薄膜感温抵抗素子1はハメチックシール
の内部の空間に保持される。
Referring to FIG. 1, the illustrated temperature detecting element includes a thin film temperature sensitive resistance element 1. The thin film temperature sensitive resistance element 1 is deposited on an insulating substrate 13 made of alumina or the like by vapor deposition, sputtering or the like. It is created by forming the resistance portion 11 and the electrode portion 12. The thin film temperature sensitive resistance element 1 has a heat resistant adhesive 4 near both ends of the back surface of the insulating substrate 13.
(For example, a Giron-based or cement-based adhesive is used), and the insulating substrate 13 is mechanically bonded to one end of the superelastic alloy wire rod 2. On the other hand, the other end of the superelastic alloy wire 2 is held by the fixing member 5 (for example, made of epoxy resin) on the flat upper surface of the stem 6,
As described above, the thin film temperature sensitive resistance element 1 is held in the space inside the hametic seal.

【0016】薄膜感温抵抗素子1の電極部12とステム
6内のリード線7との電気的接続は通常のCuあるいは
Auの細線を用いてワイヤボンディングあるいはハンダ
づけにより電気的に接続される。
The electrode portion 12 of the thin film temperature sensitive resistance element 1 and the lead wire 7 in the stem 6 are electrically connected by wire bonding or soldering using an ordinary fine wire of Cu or Au.

【0017】上述の超弾性合金線材2の材質にはチタ
ンニッケル系超弾性合金あるいは銅系超弾性合金いず
れかが使用される。
As the material of the above-mentioned superelastic alloy wire rod 2, either a titanium nickel superelastic alloy or a copper superelastic alloy is used.

【0018】この種の超弾性合金線材は、通常の線材に
比べて弾性限界が高く(通常の線材の弾性限界が数パー
セントであるのに対して上述の超弾性合金線材は6〜8
%程度の弾性限界を持つ)、外力によるまげ応力に対し
て復元力が格段にすぐれている。
This type of superelastic alloy wire has a higher elastic limit than a normal wire (the elastic limit of a normal wire is several percent, whereas the above-mentioned superelastic alloy wire has 6 to 8).
% Has an elastic limit), and the restoring force is significantly superior to the bending stress caused by an external force.

【0019】さらに引張り方向での破断応力では、通常
の線材が20〜30kg/mm2 であるのに対して超弾
性合金線材2は約70kg/mm2 程度と高く、引っぱ
り強度の点でもよりも大幅に改善される。
[0019] In breaking stress in addition tensile direction, super elastic alloy wire ordinary wire Whereas a 20-30 kg / mm 2 2 is as high as about 70 kg / mm 2 approximately, than any of the tensile strength points Greatly improved.

【0020】上記の理由で、図1に示す実施例では、機
械的な強度を確保した状態で超弾性合金線材の断面積を
少とすることができ(0.2mmφ以下が可能)、その
ため薄膜感温抵抗素子1からステム6へもれる熱量を、
従来よりも格段に小とすることができる(従来の半分以
下のもれの熱量におさえることが可能)。
For the above-mentioned reason, in the embodiment shown in FIG. 1, the cross-sectional area of the superelastic alloy wire can be reduced (measuring 0.2 mmφ or less) while ensuring the mechanical strength. The amount of heat leaked from the temperature sensitive resistance element 1 to the stem 6,
It can be made significantly smaller than before (it is possible to reduce the amount of heat that is less than half that of conventional products).

【0021】図2には図1に示す温度検出素子を用いた
応用素子である熱伝導式湿度検出素子を示す。図2に示
す素子では図1に示す素子をその抵抗値が近いもの2個
用いて、一方を小穴9が形成されたハメチックシール8
1とし、他方を気密性を保ったハメチックシール82と
している。そして、これら温度検出素子を外部抵抗R1
及びR2 を用いてブリッジ接続して、ハメチックシール
81及び82内の素子を定常発熱状態としたものであ
る。
FIG. 2 shows a heat conduction type humidity detecting element which is an application element using the temperature detecting element shown in FIG. In the element shown in FIG. 2, two elements shown in FIG. 1 having similar resistance values are used, and one of them is a hametic seal 8 having a small hole 9 formed therein.
1 and the other is a hermetic seal 82 that maintains airtightness. Then, these temperature detecting elements are connected to the external resistor R 1
And R 2 are bridge-connected to bring the elements in the hametic seals 81 and 82 into a steady heat generation state.

【0022】湿度検出の原理は、上述の従来例でも述べ
たものと同様である。一方の温度検出素子では小穴9に
より外部の空気とハメチックシール81内の空気と通気
性がある(従って湿度についても通気性有り)。薄膜感
温抵抗素子の熱伝導率は湿度依存性をもつ関係上、ハメ
チックシール81内の薄膜感温抵抗素子は湿度に対する
電圧・電流特性が異なる。従って、湿度に対する電圧差
をブリッジ回路の出力Vout として湿度検出が行なわれ
る。
The principle of humidity detection is the same as that described in the above-mentioned conventional example. On the other hand, the small hole 9 allows the temperature detecting element to have air permeability between the outside air and the air inside the hametic seal 81 (thus, there is also air permeability for humidity). Since the thermal conductivity of the thin film temperature sensitive resistance element has a humidity dependency, the thin film temperature sensitive resistance element in the hametic seal 81 has different voltage / current characteristics with respect to humidity. Therefore, humidity detection is performed using the voltage difference with respect to humidity as the output V out of the bridge circuit.

【0023】図3にはさらに他の応用例である風速検出
素子を示す。ステム上に薄膜感温抵抗素子(図1の実施
例で素子の向きを90°回転)を大気中に露出した状態
でしかも気流中に設置する。さらに、ハメチックシール
で気密封止した素子を準備し、外部抵抗R1 ,R2 とブ
リッジ接続する。そして、気流の風速による熱伝導の差
を利用してブリッジ出力電圧V2 より風速を検知する。
FIG. 3 shows a wind speed detecting element which is still another application example. A thin film temperature-sensitive resistance element (the orientation of the element is rotated by 90 ° in the embodiment of FIG. 1) is placed on the stem while being exposed to the atmosphere and in the air stream. Further, an element hermetically sealed with a hametic seal is prepared and bridge-connected with the external resistors R 1 and R 2 . Then, the wind speed is detected from the bridge output voltage V 2 by utilizing the difference in heat conduction due to the wind speed of the air flow.

【0024】図4は、本発明による温度検出素子の他の
実施例であり、この実施例では超弾性合金線材2と電極
部12との電気的接続及び超弾性合金線材2とリード線
7との電気的接続をハンダ51によるハンダ付け処理で
行っている。
FIG. 4 shows another embodiment of the temperature detecting element according to the present invention. In this embodiment, the electrical connection between the superelastic alloy wire 2 and the electrode portion 12 and the superelastic alloy wire 2 and the lead wire 7 are made. Is electrically connected by a soldering process using the solder 51.

【0025】この実施例では超弾性合金線材2は、薄膜
感温抵抗素子1を空間にうかせるための保持部材として
の役割と電流通電のための電線としての役割を兼用して
いる。そして、超弾性合金線材2がチタンニッケル系合
金の場合は、その表面をハンダづけ処理可能とするた
め、Cuメッキ処理あるいはスズ系のハンダメッキ処理
を施す。
In this embodiment, the superelastic alloy wire 2 serves both as a holding member for holding the thin film temperature sensitive resistance element 1 in the space and as an electric wire for passing current. When the superelastic alloy wire rod 2 is a titanium-nickel alloy, the surface thereof can be soldered, so that Cu plating or tin solder plating is performed.

【0026】図5(a)及び(b)に本発明による第3
の実施例を示す。図5(a)に示す実施例では超弾性合
金線材(超弾性合金ワイヤー)2がその一区間において
薄膜感温抵抗素子1の外形輪郭とほぼ同等のワク形状と
されており、このワク形状部分で薄膜感温抵抗素子を保
持してワク形状部分によって薄膜感温抵抗素子を超弾性
合金の機械的なバネ性により固定している。
The third embodiment of the present invention is shown in FIGS. 5 (a) and 5 (b).
An example of is shown. In the embodiment shown in FIG. 5 (a), the superelastic alloy wire (superelastic alloy wire) 2 has a waku shape substantially equivalent to the outer contour of the thin film temperature-sensitive resistance element 1 in one section thereof. The thin-film temperature-sensitive resistance element is held by and the thin-film temperature-sensitive resistance element is fixed by the mechanical shape of the superelastic alloy by the wavy shape part.

【0027】図5(b)に示す実施例では、超弾性合金
線材(超弾性合金ワイヤー)2がその一区間で折り曲げ
られて、この折りまげ部分で薄膜感温抵抗素子を挟持し
折りまげ部分のバネ性によって薄膜感温抵抗素子1を機
械的に固定保持している。
In the embodiment shown in FIG. 5 (b), the superelastic alloy wire (superelastic alloy wire) 2 is bent in one section, and the thin film temperature-sensitive resistance element is sandwiched between the bent portions and the folded portion. The thin film temperature sensitive resistance element 1 is mechanically fixed and held by the spring property of.

【0028】図5(a)及び(b)に示す実施例では耐
熱性接着剤を全く使用しておらず、この結果、安定した
特性の温度検出素子を実現することができる。
In the embodiment shown in FIGS. 5A and 5B, no heat-resistant adhesive is used, and as a result, a temperature detecting element having stable characteristics can be realized.

【0029】なお、図5(a)及び(b)に示す実施例
ともに薄膜感温抵抗素子1とリード線7との電気的な接
続には、通常の細線3(Cu線又はAu線)が用いら
れ、接続に当たっては、電極部12あるいはリード線7
の上端断面部分をハンダ付けあるいはスポット溶接する
ことによって接続が実施される。
In each of the embodiments shown in FIGS. 5 (a) and 5 (b), a normal thin wire 3 (Cu wire or Au wire) is used for electrical connection between the thin film temperature sensitive resistance element 1 and the lead wire 7. Used for connection, the electrode portion 12 or the lead wire 7
The connection is made by soldering or spot welding the upper cross section of the.

【0030】[0030]

【発明の効果】以上説明したように、本発明では、超弾
性合金線材によって薄膜感温抵抗素子を保持するように
したから、従来の温度検出素子に比べて熱的に安定性
化(発熱量のもれの量の軽減)し、温度検出素子として
の各種特性のばらつきを極力改善できる。組立て易
く、機械的信頼性(振動、しょうげき特性)が改善でき
るという効果がある。
As described above, according to the present invention, since the thin film temperature sensitive resistance element is held by the superelastic alloy wire, it is more thermally stable than the conventional temperature detecting element (heat generation amount). The amount of leakage can be reduced), and variations in various characteristics of the temperature detecting element can be improved as much as possible. It has the effect of being easy to assemble and improving the mechanical reliability (vibration, shoveling characteristics).

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による温度検出素子の第1の実施例を示
す斜視図である。
FIG. 1 is a perspective view showing a first embodiment of a temperature detecting element according to the present invention.

【図2】本発明による温度検出素子を用いた応用素子で
ある湿度検出素子の構成を示す図である。
FIG. 2 is a diagram showing a configuration of a humidity detecting element which is an application element using the temperature detecting element according to the present invention.

【図3】本発明による温度検出素子を用いた応用素子で
ある風速検知素子の構成を示す図である。
FIG. 3 is a diagram showing a configuration of a wind speed detecting element which is an applied element using the temperature detecting element according to the present invention.

【図4】本発明による温度検出素子の第2の実施例を示
す斜視図である。
FIG. 4 is a perspective view showing a second embodiment of the temperature detecting element according to the present invention.

【図5】本発明による温度検出素子の第3の実施例を示
す斜視図である。
FIG. 5 is a perspective view showing a third embodiment of the temperature detecting element according to the present invention.

【図6】従来の温度検出素子の一例を示す斜視図であ
る。
FIG. 6 is a perspective view showing an example of a conventional temperature detecting element.

【図7】ハメチックシールへの実装状態を説明するため
の図である。
FIG. 7 is a diagram for explaining a mounting state on a hametic seal.

【図8】検出部分のブリッジ回路を示す図である。FIG. 8 is a diagram showing a bridge circuit of a detection portion.

【符号の説明】[Explanation of symbols]

1 薄膜感温抵抗素子 11 薄膜感温抵抗部 12 電極部 13 絶縁基板 2 超弾性合金線材(超弾性合金ワイヤー) 3 細線(Cu線あるいはAu線) 4 耐熱性接着剤 5 固定部材 51 ハンダ 6 ステム 7 リード線 81 ハメチックシール(小穴あり) 82 ハメチックシール(穴なし) 9 小穴 111 受け台 DESCRIPTION OF SYMBOLS 1 Thin film temperature sensitive resistance element 11 Thin film temperature sensitive resistance part 12 Electrode part 13 Insulating substrate 2 Super elastic alloy wire (super elastic alloy wire) 3 Fine wire (Cu wire or Au wire) 4 Heat resistant adhesive 5 Fixing member 51 Solder 6 Stem 7 Lead wire 81 Hamming seal (with small hole) 82 Hamming seal (without hole) 9 Small hole 111 Cradle

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 絶縁基板と該絶縁基板上に形成された薄
膜感温抵抗部及び電極部とを有する薄膜感温抵抗素子
と、リード線を備えるステムと、前記薄膜感温抵抗素子
を前記ステムの上方で保持するための線材と、前記電極
部と前記リード線7とを電気的に接続する細線とを有
し、前記線材は超弾性合金線材であることを特徴とする
温度検出素子。
1. A thin film temperature sensitive resistance element having an insulating substrate, a thin film temperature sensitive resistance portion and an electrode portion formed on the insulating substrate, a stem provided with a lead wire, and the thin film temperature sensitive resistance element being the stem. A temperature detecting element characterized by having a wire for holding above the wire and a thin wire for electrically connecting the electrode portion and the lead wire 7, wherein the wire is a superelastic alloy wire.
【請求項2】 請求項1に記載された温度検出素子にお
いて、前記超弾性合金線材はその材質がチタンニッケル
系超弾性合金及び銅系の超弾性合金のいずれか一方であ
り、前記超弾性合金線材は前記電極部及び前記リード線
とにハンダ付け接続されており、前記超弾性合金線材が
前記細線を兼用するようにしたことを特徴とする温度検
出素子。
2. The temperature detecting element according to claim 1, wherein the superelastic alloy wire material is one of a titanium-nickel superelastic alloy and a copper superelastic alloy, and the superelastic alloy. A temperature detecting element, wherein the wire is soldered and connected to the electrode portion and the lead wire, and the superelastic alloy wire also serves as the thin wire.
【請求項3】 請求項2に記載された温度検出素子にお
いて、前記超弾性合金線材がチタンニッケル系超弾性合
金線材である際には、前記超弾性合金線材の表面は銅メ
ッキ処理あるいはハンダメッキ処理されていることを特
徴とする温度検出素子。
3. The temperature detecting element according to claim 2, wherein when the superelastic alloy wire is a titanium-nickel superelastic alloy wire, the surface of the superelastic alloy wire is copper-plated or solder-plated. A temperature detection element characterized by being processed.
【請求項4】 請求項1に記載された温度検出素子にお
いて、前記超弾性合金線材はその一部分がワク形状に加
工されるか又は折り曲げ形状に加工されており、前記ワ
ク形状部分又は前記折り曲げ形状部分で前記薄膜感温抵
抗素子を保持するようにしたことを特徴とする温度検出
素子。
4. The temperature detecting element according to claim 1, wherein a part of the superelastic alloy wire rod is processed into a waku shape or a bent shape, and the waku shape part or the bent shape. A temperature detecting element, characterized in that the thin film temperature sensitive resistance element is held at a portion thereof.
【請求項5】 請求項1乃至4のいずれか一つに記載さ
れた温度検出素子が2個用いられ、該温度検出素子はそ
の抵抗値が近似しており、前記温度検出素子の一方は小
穴が形成されたパッケージケース内に装着され、前記温
度検出素子はパッケージケース内に装着されて外気と遮
断されており、前記2個の温度検出素子は2個の外部抵
抗にを用いてブリッジ回路が構成され、前記2個の温度
検出素子にはそれぞれ定常的に発熱状態とする通電電流
が流されており、前記小穴が形成されたパッケージケー
ス内に装着された温度検出素子の周辺空気の湿度に対す
る電圧電流特性の変化分を前記ブリッジ回路により検出
して湿度を検知するようにしたことを特徴とする応用素
子。
5. The temperature detecting element according to claim 1, wherein two temperature detecting elements are used, the resistance values of the temperature detecting elements are close to each other, and one of the temperature detecting elements has a small hole. Is mounted in a package case in which is formed, the temperature detecting element is mounted in the package case and is shielded from the outside air, and the two temperature detecting elements use two external resistors to form a bridge circuit. An energizing current that constantly generates heat is made to flow through each of the two temperature detecting elements, and the temperature detecting elements mounted in the package case in which the small holes are formed are exposed to the humidity of the ambient air. An applied element characterized in that a change amount of voltage-current characteristics is detected by the bridge circuit to detect humidity.
【請求項6】 請求項1乃至4のいずれか一つに記載さ
れた温度検出素子がを用いて、前記薄膜感温抵抗素子は
気流中に露出した状態であり、かつ前記薄膜感温抵抗素
子には定常電流が通電されて定常の発熱状態となってお
り、前記気流の風速値と熱の放散量の変動による前記薄
膜感温抵抗素子抵抗値の変化分を検出して風速を検知す
ることを特徴とする応用素子。
6. The temperature detecting element according to claim 1, wherein the thin film temperature sensitive resistance element is exposed in an air flow, and the thin film temperature sensitive resistance element is used. Is in a steady heat generation state, and the wind speed is detected by detecting the change in the resistance value of the thin film temperature-sensitive resistance element due to the fluctuation of the wind speed value of the air flow and the amount of heat dissipation. Application element characterized by.
JP12663993A 1993-05-28 1993-05-28 Temperature detecting element and its application element Expired - Fee Related JP3277471B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12663993A JP3277471B2 (en) 1993-05-28 1993-05-28 Temperature detecting element and its application element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12663993A JP3277471B2 (en) 1993-05-28 1993-05-28 Temperature detecting element and its application element

Publications (2)

Publication Number Publication Date
JPH06337229A true JPH06337229A (en) 1994-12-06
JP3277471B2 JP3277471B2 (en) 2002-04-22

Family

ID=14940181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12663993A Expired - Fee Related JP3277471B2 (en) 1993-05-28 1993-05-28 Temperature detecting element and its application element

Country Status (1)

Country Link
JP (1) JP3277471B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003021246A1 (en) * 2001-08-31 2003-03-13 Kurabe Industrial Co., Ltd. Capacitive humidity-sensor and capacitive humidity-sensor manufacturing method
WO2010013727A1 (en) * 2008-07-31 2010-02-04 シチズンファインテックミヨタ株式会社 Gas sensor
JP2010236981A (en) * 2009-03-31 2010-10-21 Furukawa Electric Co Ltd:The Battery state detection sensor device
JP2017523415A (en) * 2014-07-25 2017-08-17 エプコス アクチエンゲゼルシャフトEpcos Ag SENSOR ELEMENT, SENSOR DEVICE, AND METHOD FOR MANUFACTURING SENSOR ELEMENT AND SENSOR DEVICE
US10861624B2 (en) 2014-07-25 2020-12-08 Epcos Ag Sensor element, sensor arrangement, and method for manufacturing a sensor element
CN116593075A (en) * 2023-07-19 2023-08-15 浙江朗德电子科技有限公司 Hydrogen sensor detection unit, preparation method and detection method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003021246A1 (en) * 2001-08-31 2003-03-13 Kurabe Industrial Co., Ltd. Capacitive humidity-sensor and capacitive humidity-sensor manufacturing method
WO2010013727A1 (en) * 2008-07-31 2010-02-04 シチズンファインテックミヨタ株式会社 Gas sensor
JP2010038575A (en) * 2008-07-31 2010-02-18 Citizen Finetech Miyota Co Ltd Gas sensor
JP2010236981A (en) * 2009-03-31 2010-10-21 Furukawa Electric Co Ltd:The Battery state detection sensor device
JP2017523415A (en) * 2014-07-25 2017-08-17 エプコス アクチエンゲゼルシャフトEpcos Ag SENSOR ELEMENT, SENSOR DEVICE, AND METHOD FOR MANUFACTURING SENSOR ELEMENT AND SENSOR DEVICE
US10861624B2 (en) 2014-07-25 2020-12-08 Epcos Ag Sensor element, sensor arrangement, and method for manufacturing a sensor element
US11346726B2 (en) 2014-07-25 2022-05-31 Epcos Ag Sensor element, sensor arrangement, and method for manufacturing a sensor element and a sensor arrangement
CN116593075A (en) * 2023-07-19 2023-08-15 浙江朗德电子科技有限公司 Hydrogen sensor detection unit, preparation method and detection method
CN116593075B (en) * 2023-07-19 2023-10-13 浙江朗德电子科技有限公司 Hydrogen sensor detection unit, preparation method and detection method

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