JPH0566537B2 - - Google Patents

Info

Publication number
JPH0566537B2
JPH0566537B2 JP59168467A JP16846784A JPH0566537B2 JP H0566537 B2 JPH0566537 B2 JP H0566537B2 JP 59168467 A JP59168467 A JP 59168467A JP 16846784 A JP16846784 A JP 16846784A JP H0566537 B2 JPH0566537 B2 JP H0566537B2
Authority
JP
Japan
Prior art keywords
strain
diaphragm
sensitive resistor
layer
sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59168467A
Other languages
Japanese (ja)
Other versions
JPS6147532A (en
Inventor
Masahiro Kume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP16846784A priority Critical patent/JPS6147532A/en
Publication of JPS6147532A publication Critical patent/JPS6147532A/en
Publication of JPH0566537B2 publication Critical patent/JPH0566537B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm

Description

【発明の詳細な説明】 技術分野 この発明は液体などの圧力をダイヤフラムで受
け、ダイヤフラム上に設定された感歪抵抗体によ
り歪を電気信号に変換して取り出す形式の歪セン
サに関する。
DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a strain sensor that receives the pressure of a liquid or the like with a diaphragm and converts the strain into an electrical signal using a strain-sensitive resistor set on the diaphragm.

技術の技術 従来より液体などの圧力を測定する圧力センサ
としてダイヤフラムで圧力を受け、ダイヤフラム
上に形成した感歪抵抗体により、歪を電気抵抗の
変化として取り出す歪センサが広く使用されてい
る。感歪抵抗体には金属歪ゲージや半導体歪ゲー
ジを使用し、これをダイヤフラム上に接着剤で貼
着・固定したものが用いられている。
BACKGROUND ART Conventionally, strain sensors have been widely used as pressure sensors for measuring the pressure of liquids, etc., which receive pressure with a diaphragm and extract strain as a change in electrical resistance using a strain-sensitive resistor formed on the diaphragm. A metal strain gauge or a semiconductor strain gauge is used as the strain-sensitive resistor, and this is adhered and fixed onto a diaphragm with an adhesive.

第6図は従来の歪センサの1例を示したもの
で、金属歪ゲージをダイヤフラム上に貼着した要
部の断面図である。第6図において歪ゲージ1は
ダイヤフラム2上に接着剤3により固定されてい
る。液体導入口7から導入された液体の圧力によ
り、ダイヤフラム2が歪み、ダイヤフラム2に発
生した歪は、接着剤層3及び樹脂基板5を介して
感歪抵抗体4に伝えられ、感歪抵抗体4において
液体の圧力に応じた歪が発生する。この歪がリー
ド線6により電気抵抗の変化として検出され、液
体の圧力を知ることができる。しかし、かゝる構
造のセンサでは、使用中、接着中の低下により特
性の劣化があること、ダイヤフラム上に金属歪ゲ
ージや半導体歪ゲージを接着剤で均一に貼着せし
めるのにかなりの熟練を要すること、などの問題
を内在していた。
FIG. 6 shows an example of a conventional strain sensor, and is a sectional view of a main part in which a metal strain gauge is stuck on a diaphragm. In FIG. 6, strain gauge 1 is fixed onto diaphragm 2 with adhesive 3. In FIG. The diaphragm 2 is distorted by the pressure of the liquid introduced from the liquid inlet 7, and the distortion generated in the diaphragm 2 is transmitted to the strain-sensitive resistor 4 via the adhesive layer 3 and the resin substrate 5, and the strain-sensitive resistor 4, distortion occurs in accordance with the pressure of the liquid. This strain is detected by the lead wire 6 as a change in electrical resistance, and the pressure of the liquid can be determined. However, in sensors with such a structure, the characteristics deteriorate due to deterioration during use and bonding, and it takes considerable skill to evenly attach the metal strain gauge or semiconductor strain gauge to the diaphragm with adhesive. There were inherent problems such as the need for

上述の問題点を解決するため、出願人は先に新
たな歪センサを提案した(特開昭58−232497号)。
それを要約すれば、受歪構造部材(ダイヤフラ
ム)と該ダイヤフラム上に直接蒸着形成され歪に
従つて電気抵抗の変化する複数個の感歪抵抗体
と、該感歪抵抗体両端上に形成された電極とを備
え、ダイヤフラムに発生した歪を電気信号として
取出す歪センサである。即ち、従来種々の問題を
生じていた接着剤を追放し、ダイヤフラム上に直
接感歪抵抗体を形成することにより上述の諸問題
を解決しようとするものである。
In order to solve the above-mentioned problems, the applicant previously proposed a new strain sensor (Japanese Patent Laid-Open No. 58-232497).
To summarize, there is a strain-sensitive structural member (diaphragm), a plurality of strain-sensitive resistors formed directly on the diaphragm by vapor deposition and whose electrical resistance changes according to strain, and a strain-sensitive resistor formed on both ends of the strain-sensitive resistor. This is a strain sensor that extracts the strain generated in the diaphragm as an electrical signal. That is, it attempts to solve the above-mentioned problems by eliminating the adhesive that has conventionally caused various problems and forming a strain-sensitive resistor directly on the diaphragm.

第4図は上述の歪センサの要部の断面図を示し
たものである。第4図において、ダイヤフラム2
の上面に電気絶縁層9が形成されており、該電気
絶縁層9上には感歪抵抗体4が設けられており、
感歪抵抗体4の両端には感歪抵抗体4に生じた電
気抵抗の変化を取り出すための電極部8が形成さ
れている。電極部8は詳しくは、感歪抵抗体上の
電極8a及び導体回路部8bから形成されてい
る。6は導体回路部8bから電気信号を取り出す
ためのリード線である。かゝる構造はセンサは通
常第5図の如く、ブリツジ回路に構成して使用さ
れる。第5図においてR1,R2,R3,R4は感歪抵
抗体、γ1a,γ1b,γ2a,γ2b,γ3a,γ3b,γ4a,γ
4b
電極間の導体回路の抵抗を示す。又Eはブリツジ
の入力電源部Vはブリツジ出力端子部を示す。電
極及び電極感の導体回路は通常、蒸着などの薄膜
形成手段により形成される。
FIG. 4 shows a sectional view of the main parts of the above-mentioned strain sensor. In Figure 4, diaphragm 2
An electrically insulating layer 9 is formed on the upper surface of the electrically insulating layer 9, and a strain-sensitive resistor 4 is provided on the electrically insulating layer 9.
Electrode portions 8 are formed at both ends of the strain-sensitive resistor 4 to extract changes in electrical resistance occurring in the strain-sensitive resistor 4. Specifically, the electrode portion 8 is formed from an electrode 8a on a strain-sensitive resistor and a conductor circuit portion 8b. 6 is a lead wire for taking out an electric signal from the conductive circuit portion 8b. Such a structure is usually used when the sensor is constructed into a bridge circuit as shown in FIG. In Fig . 5 , R 1 , R 2 , R 3 , and R 4 are strain - sensitive resistors ;
4b shows the resistance of the conductor circuit between the electrodes. Further, E indicates the input power supply section of the bridge, and V indicates the bridge output terminal section. Electrodes and conductor circuits of electrodes are usually formed by thin film forming means such as vapor deposition.

リード線6は電極部8(通常導体回路部8b)
に直接細線によるワイヤボンデイング法やハンダ
付け法により形成せしめることができるが、電極
部へのリード線接合は電極部が薄膜のため、通常
太いリード線を直接接合し難く、又細線リード線
接続ではリード線の断線などの問題があり、接合
の信頼性が低い他、作業性にも劣つている。更に
電極間をつなぐ導体回路部の抵抗γ1a,γ1b,γ2a
γ2b,γ3a,γ3b,γ4a,γ4bにバラツキがあり、感歪
抵抗体をブリツジ形成する際、抵抗値バラツキの
1因をつくるなどの問題がある。この他感歪抵抗
体がシリコンなどの半導体の場合、抵抗の温度係
数が一般に大なるため、各感歪抵抗体感の温度差
をより小さくすることが望まれている。
The lead wire 6 is connected to the electrode section 8 (normal conductor circuit section 8b)
However, since the electrode part is a thin film, it is usually difficult to directly join a thick lead wire to the electrode part, and it is difficult to connect the lead wire to the electrode part directly by wire bonding or soldering with a thin wire. There are problems such as breakage of lead wires, the reliability of the bonding is low, and the workability is also poor. Furthermore, the resistances γ 1a , γ 1b , γ 2a ,
There are variations in γ 2b , γ 3a , γ 3b , γ 4a , and γ 4b , which causes problems such as creating a cause of resistance value variation when bridge-forming a strain-sensitive resistor. When the other strain-sensitive resistors are made of a semiconductor such as silicon, the temperature coefficient of resistance is generally large, so it is desired to reduce the temperature difference between the respective strain-sensitive resistors.

発明の目的 それゆえ本発明の目的は電極部に直接太いハン
ダ層を設けてリード線の断線を防止し、接合信頼
性を高め作業性も向上せしめるようにすること、
電極部間をつなぐ導体回路のほゞ全ての面を覆い
導体部の抵抗のバラツキを低減せしめること、更
に感歪抵抗体がシリコン等の半導体の場合には、
抵抗の温度係数が一般に大きいため、各感歪抵抗
体感の温度差を小さくすることである。
Purpose of the Invention Therefore, the purpose of the present invention is to provide a thick solder layer directly on the electrode part to prevent lead wire breakage, improve bonding reliability, and improve workability.
Covering almost all surfaces of the conductor circuit connecting the electrode parts to reduce variations in resistance of the conductor parts, and furthermore, when the strain-sensitive resistor is a semiconductor such as silicon,
Since the temperature coefficient of resistance is generally large, the objective is to reduce the temperature difference between each strain-sensitive resistor.

発明の構成 本発明は、少なくとも表層に電気絶縁層を有す
るダイヤフラム上に感歪抵抗体がブリツジ形成さ
れてなる歪みセンサにおいて、薄膜状に形成され
た該感歪抵抗体両端電極及び電極間の導体回路上
に厚膜状のハンダ層を形成し、より望ましくは該
感歪抵抗体が耐熱性樹脂等の絶縁層にて保護され
ていることを特徴とする歪センサを提供する。
Structure of the Invention The present invention provides a strain sensor in which a strain-sensitive resistor is bridge-formed on a diaphragm having an electrically insulating layer on at least a surface layer, and in which electrodes at both ends of the strain-sensitive resistor formed in a thin film shape and a conductor between the electrodes are provided. The present invention provides a strain sensor characterized in that a thick solder layer is formed on a circuit, and more preferably, the strain-sensitive resistor is protected with an insulating layer such as a heat-resistant resin.

実施例 第1図及び第2図は本発明の歪センサの実施例
で第1図は断面図、第2図はダイヤフラム上部の
要部を示している。
Embodiment FIGS. 1 and 2 show an embodiment of the strain sensor of the present invention, with FIG. 1 being a sectional view and FIG. 2 showing the main part of the upper part of the diaphragm.

第1図及び第2図において2はステンレス鋼な
どの金属ダイヤフラム、9は樹脂やセラミツク
ス、ガラスなどからなる電気絶縁層、4は該絶縁
層上にシリコン半導体などで形成された薄膜状の
感歪抵抗体を示し、第2図に示した如く、電気絶
縁層9上に厚み約1μmで4ケ形成され、それらを
導体回路で結びブリツジ回路を構成している(中
央の感歪抵抗体2ケは引張力、端部の感歪抵抗体
2ケは圧縮力を受ける)。又8は該感歪抵抗体両
端部に形成された周知の導電材質であるニツケル
や銅などの薄膜状の電極部(厚み約0.5μm)で、
8aは感歪抵抗体上の電極、8bは感歪抵抗体間
の導体回路部を示す。10は電極8aおよび電極
間導体回路部8b上に形成された厚膜状のハンダ
層(厚み約0.4mm)でブリツジ回路における各々
の電極及び導体回路部全体を被覆している。ダイ
ヤフラム2は液体導入口7よりの圧力により歪を
生じ、ダイヤフラム2上の各感歪抵抗体は歪に伴
う電気抵抗変化を生じ、この変化がブリツジ出力
電圧変化としてリード線6を通して外部に取り出
される(印加電源部は図より省略してある)。
In FIGS. 1 and 2, 2 is a metal diaphragm made of stainless steel, 9 is an electrical insulating layer made of resin, ceramics, glass, etc., and 4 is a thin film-like strain-sensitive film formed of silicon semiconductor or the like on the insulating layer. As shown in Figure 2, four resistors are formed with a thickness of about 1 μm on an electrical insulating layer 9, and they are connected by a conductive circuit to form a bridge circuit (the two strain-sensitive resistors in the center). is the tensile force, and the two strain-sensitive resistors at the ends are the compressive force). Further, 8 is a thin film electrode portion (thickness approximately 0.5 μm) made of a well-known conductive material such as nickel or copper, which is formed on both ends of the strain-sensitive resistor.
Reference numeral 8a indicates an electrode on the strain-sensitive resistor, and 8b indicates a conductive circuit portion between the strain-sensitive resistors. 10 is a thick solder layer (about 0.4 mm thick) formed on the electrode 8a and the interelectrode conductor circuit section 8b, covering each electrode and the entire conductor circuit section in the bridge circuit. The diaphragm 2 is strained by the pressure from the liquid inlet 7, and each strain-sensitive resistor on the diaphragm 2 causes a change in electrical resistance due to the strain, and this change is taken out to the outside through the lead wire 6 as a bridge output voltage change. (The applied power supply section is omitted from the figure).

ハンダ層10は感歪抵抗体4、電極部8、絶縁
層11の形成後ダイヤフラムの上面をハンダ融液
中に浸漬するか又はハンダペーストによるスクリ
ーン印刷後焼却して得られる。絶縁層11はポリ
エステルアミドなどの耐熱性樹脂などで形成さ
れ、ハンダ層形成時、感歪抵抗体の表面劣化(感
歪体が金属の場合には抵抗の短絡)を防止させる
と共に、外部よりの湿気侵入防止層としての働き
をもつものである。尚絶縁層11は相互電極間、
あるいは相互導電回路部間の巾が狭く、ハンダで
短絡する恐れのある時は予め、一定の範囲で広く
被覆しても差支えない。
The solder layer 10 is obtained by immersing the upper surface of the diaphragm in a solder melt after forming the strain-sensitive resistor 4, the electrode portion 8, and the insulating layer 11, or by incinerating the diaphragm after screen printing with solder paste. The insulating layer 11 is made of a heat-resistant resin such as polyesteramide, and prevents surface deterioration of the strain-sensitive resistor (short-circuiting of the resistor if the strain-sensitive body is made of metal) when forming the solder layer, and also protects against external damage. It functions as a moisture intrusion prevention layer. Note that the insulating layer 11 is between mutual electrodes,
Alternatively, if the width between mutually conductive circuit parts is narrow and there is a risk of a short circuit due to solder, it may be possible to cover a certain range in advance.

又感歪抵抗体としてはシリコンの他Ge,C(ダ
イヤモンド)、Ga,As,GaPなどの半導体、Ni
−Cu,Ni−Crなどの金属を用いることができ
る。
In addition to silicon, semiconductors such as Ge, C (diamond), Ga, As, and GaP, as well as Ni, can be used as strain-sensitive resistors.
-Metals such as Cu and Ni-Cr can be used.

又ダイヤフラムは第1図の如く、表層に電気絶
縁層を有していることが必要であるが、全体を絶
縁体あるいは半絶縁体材料で構成することも可能
である。第3図は本発明における他の実施例を示
す。第3図は第2図は同様のブリツジ回路を示し
ているが、電極間の導体回路の面積を大きくし
て、ハンダ層の熱容量を大とし熱伝導を良くした
もので各感歪抵抗体部の温度をより均一ならしめ
ている。
Although the diaphragm must have an electrically insulating layer on its surface as shown in FIG. 1, it is also possible to construct the entire diaphragm from an insulating or semi-insulating material. FIG. 3 shows another embodiment of the invention. Figure 3 shows a bridge circuit similar to Figure 2, but the area of the conductor circuit between the electrodes is increased to increase the heat capacity of the solder layer and improve heat conduction. This makes the temperature more uniform.

発明の効果 上述の如く、本発明は少なくとも表層に電気絶
縁層を有するダイヤフラム上に感歪抵抗体がブリ
ツジ形成されてなる歪センサにおいて、該感歪抵
抗体両端電極及び電極間の導体回路上にハンダ層
を形成してなる歪センサで薄膜状の電極及び導体
回路上に厚膜状にハンダ層が形成されているので
リード線の接続作業が極めて、迅速、容易にな
り、従来適用が困難であつた比較的太いリード線
でも、直接ハンダ接続することが可能となり、細
線リードのハンダ接続や、ワイヤボンデイングに
みられるリード線の断線などのトラブルを消失せ
しめることができる。又導体回路部の抵抗値は第
4図の構成では数Ω〜数+Ωのバラツキが生じて
いたが、本発明の構成をとることにより導体回路
部の抵抗値はすべてほゞ零Ωとなり、抵抗バラツ
キを消失せしめることができる。更に電極及び導
体回路部の熱容量を増大せしめて、熱伝導を良好
ならしめたので感歪抵抗体間の温度差を急熱、急
冷などの熱過渡状態時でも極力小さくできるの
で、熱的バランスが一段と向上し性能的にも安定
したセンサを提供する。又、該感歪抵抗体上の耐
熱性樹脂等の絶縁層により、ハンダ層形成時、感
歪抵抗体の表面劣化を防止する。
Effects of the Invention As described above, the present invention provides a strain sensor in which a strain-sensitive resistor is bridge-formed on a diaphragm having an electrically insulating layer on at least the surface layer, and a strain-sensitive resistor on an electrode at both ends of the strain-sensitive resistor and a conductor circuit between the electrodes. This strain sensor has a thick solder layer formed on the thin film electrode and conductor circuit, making the lead wire connection work extremely quick and easy, which was difficult to apply in the past. It is now possible to directly solder connect even relatively thick lead wires, which eliminates problems such as soldering of thin wire leads and breakage of lead wires that occur during wire bonding. In addition, the resistance value of the conductor circuit part varied from several ohms to several + ohms in the configuration shown in FIG. Variations can be eliminated. Furthermore, we have increased the heat capacity of the electrodes and conductor circuits to improve heat conduction, so the temperature difference between the strain-sensitive resistors can be minimized even during thermal transient states such as rapid heating and cooling, resulting in improved thermal balance. We provide a sensor with further improved performance and stable performance. Furthermore, the insulating layer made of heat-resistant resin or the like on the strain-sensitive resistor prevents surface deterioration of the strain-sensitive resistor during formation of the solder layer.

上述の如く本発明になる歪センサは種々の優れ
た効果を有しており、その工業的価値の大なるも
のである。
As described above, the strain sensor according to the present invention has various excellent effects and is of great industrial value.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図及び第2図は本発明の歪センサの実施例
で第1図は要部の断面図。第2図はダイヤフラム
上部の要部の平面図を示している。第3図は本発
明の歪センサの他の実施例で、ダイヤフラム上部
の要部の平面図を示している。第4図は先願の歪
センサの要部の断面図。第5図は第4図のブリツ
ジ回路の電気回路図を示す。第6図は従来の歪セ
ンサの1例で要部の断面図を示す。 2……ダイヤフラム、4……感歪抵抗体、6…
…リード線、8……薄膜状の電極部、10……ハ
ンダ層、11……絶縁層。
1 and 2 are embodiments of the strain sensor of the present invention, and FIG. 1 is a sectional view of the main part. FIG. 2 shows a plan view of the main part of the upper part of the diaphragm. FIG. 3 shows another embodiment of the strain sensor of the present invention, and shows a plan view of the main part of the upper part of the diaphragm. FIG. 4 is a sectional view of the main parts of the strain sensor of the earlier application. FIG. 5 shows an electrical circuit diagram of the bridge circuit of FIG. FIG. 6 shows a sectional view of the main parts of an example of a conventional strain sensor. 2...Diaphragm, 4...Strain-sensitive resistor, 6...
... Lead wire, 8 ... Thin film electrode portion, 10 ... Solder layer, 11 ... Insulating layer.

Claims (1)

【特許請求の範囲】 1 少くとも表層に電気絶縁層を有するダイヤフ
ラム上に感歪抵抗体がブリツジ形成されてなる歪
センサにおいて、該感歪抵抗体両端電極及び該電
極感の導体回路の第1層がニツケルや銅などの薄
膜状導電金属材料からなり更にその上に第1層の
ほゞすべての面にハンダ層を有する第2の導体層
を形成してなることを特徴とする歪センサ。 2 該感歪抵抗体が耐熱性樹脂等の絶縁層にて保
護されてなる特許請求の範囲第1項記載の歪セン
サ。
[Scope of Claims] 1. A strain sensor in which a strain-sensitive resistor is bridge-formed on a diaphragm having an electrically insulating layer on at least a surface layer, which includes electrodes at both ends of the strain-sensitive resistor and a first conductor circuit of the electrode. A strain sensor characterized in that the layer is made of a thin film-like conductive metal material such as nickel or copper, and further thereon is formed a second conductive layer having a solder layer on substantially all surfaces of the first layer. 2. The strain sensor according to claim 1, wherein the strain-sensitive resistor is protected by an insulating layer such as a heat-resistant resin.
JP16846784A 1984-08-11 1984-08-11 Strain sensor Granted JPS6147532A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16846784A JPS6147532A (en) 1984-08-11 1984-08-11 Strain sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16846784A JPS6147532A (en) 1984-08-11 1984-08-11 Strain sensor

Publications (2)

Publication Number Publication Date
JPS6147532A JPS6147532A (en) 1986-03-08
JPH0566537B2 true JPH0566537B2 (en) 1993-09-22

Family

ID=15868649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16846784A Granted JPS6147532A (en) 1984-08-11 1984-08-11 Strain sensor

Country Status (1)

Country Link
JP (1) JPS6147532A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989003592A1 (en) * 1987-10-07 1989-04-20 Kabushiki Kaisha Komatsu Seisakusho Semiconducteur thin-film pressure sensor and method of producing the same
JP2651492B2 (en) * 1989-11-08 1997-09-10 セイコー電子工業 株式会社 Manufacturing method of relative pressure sensor
CN102575964B (en) * 2009-12-25 2014-06-18 阿尔卑斯电气株式会社 Force sensor and method of manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123179A (en) * 1974-08-20 1976-02-24 Matsushita Electric Ind Co Ltd ATSURYOKU HENKANKI
JPS54150987A (en) * 1978-05-18 1979-11-27 Gulton Ind Inc Strain gauge transducer and method of fabricating same
JPS56107141A (en) * 1980-01-30 1981-08-25 Matsushita Electric Ind Co Ltd Pressure sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123179A (en) * 1974-08-20 1976-02-24 Matsushita Electric Ind Co Ltd ATSURYOKU HENKANKI
JPS54150987A (en) * 1978-05-18 1979-11-27 Gulton Ind Inc Strain gauge transducer and method of fabricating same
JPS56107141A (en) * 1980-01-30 1981-08-25 Matsushita Electric Ind Co Ltd Pressure sensor

Also Published As

Publication number Publication date
JPS6147532A (en) 1986-03-08

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