JPS5951503A - Thermistor - Google Patents

Thermistor

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Publication number
JPS5951503A
JPS5951503A JP14135883A JP14135883A JPS5951503A JP S5951503 A JPS5951503 A JP S5951503A JP 14135883 A JP14135883 A JP 14135883A JP 14135883 A JP14135883 A JP 14135883A JP S5951503 A JPS5951503 A JP S5951503A
Authority
JP
Japan
Prior art keywords
lead wire
thermistor
support plate
insulating support
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14135883A
Other languages
Japanese (ja)
Inventor
彪 長井
一志 山本
郁夫 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14135883A priority Critical patent/JPS5951503A/en
Publication of JPS5951503A publication Critical patent/JPS5951503A/en
Pending legal-status Critical Current

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  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Thermistors And Varistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は鍋物調理をする際鍋底を通して鍋内部の調理物
の温度検出をするサーミスタに関するものである5、 従来例の構成とその問題点 従来この種温度検出は第1図に示す如く鍋底1に熱電対
2を機械的に接触せしめ、前記熱電対2の熱起電力を検
出することによってなされていた。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thermistor that detects the temperature of food inside the pot through the bottom of the pot when cooking in a pot. Temperature detection has been carried out by mechanically bringing a thermocouple 2 into contact with the pot bottom 1 and detecting the thermoelectromotive force of the thermocouple 2, as shown in FIG.

この時熱電対2を鍋底1に機械的に強固に接触せしめる
為に熱′電対2は支持容器3に固定されていた。しかし
熱起電力は通常小さな値しかイIIられないと、いう欠
点があった。たとえばアルメル−クロメル熱電対は耐熱
性(背気中500〜10001:)に優れ;1、た安価
であるが、〜40μ■/℃の起?IU力しか発生しない
。銅−コンスタンクン熱電対、白金−白6i−ロジウム
熱電対もその熱起電力は(30〜60)μV/TLか得
られないのみならず、耐熱性が小さい(銅−コンスタン
クン熱電対)、高価である(白金−白金・ロジウム熱電
対)なとの欠点があった。その他種々の熱電対が存在す
るが、いずれも上記の如き欠点を有していた。上記の如
く小さな熱起電力を電気的に検出して、熱源の発熱量を
制御する場合電気的に大きな増幅をしなければならない
ので価格か高くなる。複雑な電気回路が必要になるなど
の欠点も派生した。
At this time, the thermocouple 2 was fixed to the support container 3 in order to bring the thermocouple 2 into strong mechanical contact with the pot bottom 1. However, there was a drawback in that thermoelectromotive force could normally only be produced at a small value. For example, alumel-chromel thermocouples have excellent heat resistance (500 to 10,001:); 1. They are inexpensive, but have a heat resistance of ~40μ/℃? Only IU force is generated. Copper-constancouple thermocouples and platinum-white 6i-rhodium thermocouples not only cannot obtain a thermoelectromotive force of (30 to 60) μV/TL, but also have low heat resistance (copper-constancouple thermocouples). The drawback was that it was expensive (platinum-platinum/rhodium thermocouple). Various other thermocouples exist, but all of them have the drawbacks mentioned above. When controlling the amount of heat generated by a heat source by electrically detecting a small thermoelectromotive force as described above, a large amount of electrical amplification must be performed, which increases the cost. There were also disadvantages such as the need for complex electrical circuits.

他方上記熱電対に代ってサーミスタを用いて温度検出を
する場合、抵抗値の温度に対する変化率は(1〜7%/
℃)の大きな値を得られる。従って複雑な電気回路を必
要とせず、1だ低価格になるなどの長所を有する。この
場合ザーミスタ素子tユできるだけ小さくして、熱容量
を小さくしだものが選ばれる。これは小型化により熱応
答性を速くできるからである。この様な小型のサーミス
タ素子、たとえば薄膜サーミスタチップ、から内部リー
ド線を取り出す場合、通常耐熱、耐食性の細い金属線、
たとえば50〜200μφの金線、白欲線など、が選ば
れる。この内部リード線は細いのでその取扱いが困難で
あること9価格か高いことなど理由により、この内部リ
ード線に更に外部リード線を接続して、この外部リード
線を通じてザーミ・スタ素子の抵抗値が、従って温度が
、検出される。外Er1SIJ−ド線には内部リード線
との接続の容易性、信頼性あるいは耐熱性、耐食性なと
を考慮シてスデレンス線、ニッケル綜、鉄−クロム線な
どが選ばれる。しかしこの場合内部リード線とサーミス
タ素子との接続強度は垂直方向の引張強度にして数十〜
数百yと小さいので、使用時に僅かの応力が印加された
り、あるいは極端な場合内部り−1・線ど夕1. j′
、lsリード線の自重により数100〜数1000比1
間後、前記接続部から断線し易いという欠点かあった。
On the other hand, when temperature is detected using a thermistor instead of the above thermocouple, the rate of change in resistance value with respect to temperature is (1 to 7%/
℃) can be obtained. Therefore, it has the advantage of not requiring a complicated electric circuit and being much cheaper. In this case, the thermistor element t is made as small as possible and one with a small heat capacity is selected. This is because miniaturization allows for faster thermal response. When taking out the internal lead wire from such a small thermistor element, such as a thin film thermistor chip, it is usually necessary to use a heat-resistant, corrosion-resistant thin metal wire,
For example, gold wire, white wire, etc. with a diameter of 50 to 200 μφ are selected. Because this internal lead wire is thin and difficult to handle, and because it is expensive, an external lead wire is further connected to this internal lead wire, and the resistance value of the thermistor element is adjusted through this external lead wire. , and therefore the temperature is detected. For the outer Er1SIJ- lead wire, Sderens wire, nickel helix, iron-chromium wire, etc. are selected in consideration of ease of connection with the inner lead wire, reliability, heat resistance, and corrosion resistance. However, in this case, the connection strength between the internal lead wire and the thermistor element is tens of tens of tens
Because it is small, only a few hundred meters, a slight stress may be applied during use, or in extreme cases, internal damage may occur. j′
, depending on the weight of the ls lead wire, it is several hundred to several thousand ratio 1
There was a drawback that the wire was likely to be disconnected from the connection after the connection was completed.

発明の目的 本発明i1−この陣従来の欠点を角I(消し/ζブザー
スタを提供するものである。
OBJECTS OF THE INVENTION The present invention i1--provides a horn I (erasing/ζ buzzer star) which overcomes the drawbacks of the prior art.

発明の構成 本発明t、1、支i’jj答器に薄膜サーミスタ素子を
固定し、内部リード線、外部リード線を取り出して成る
サーミスタにおいて、少なくとも支持容器の端部に複数
個の小穴を有し、かつこの小穴の周辺部に、相互に電気
的に分離される如く半田イマ1もしくはロー(=jでき
る層(接続層)を有する絶縁性支持板を設け、この絶縁
性支持板を介して内部リード線と外部リード線とを接続
する構成である。
Structure of the Invention The present invention (1) is a thermistor in which a thin film thermistor element is fixed to a supporting container and internal lead wires and external lead wires are taken out, and a plurality of small holes are provided at least at the end of the supporting container. In addition, an insulating support plate having a layer (connection layer) that can be used for soldering is provided around the small hole so as to be electrically isolated from each other, and This configuration connects an internal lead wire and an external lead wire.

実施例の説明 本発明の一実施例は第2図に模式的VC示す如く、支持
容器3に薄膜サーミスタ素子4を固定し、内部リード線
5.外部リード線6を取り出して成るサーミスタにおい
て、少なくとも支持容器3の端部に複数個の小穴7を有
し、且つこの小穴了の周辺部に、相互に電気的に分離さ
れる如く半田付もしくはロー材できる層(接続層)8を
有する絶縁性支持板9を設け、この絶縁性支持板9を介
して内部リード線6と外部リード線6とを接続する点に
ある。
DESCRIPTION OF THE EMBODIMENTS In one embodiment of the present invention, as shown schematically in FIG. A thermistor with an external lead wire 6 taken out has a plurality of small holes 7 at least at the end of the support container 3, and the areas around the small holes are soldered or soldered so as to be electrically isolated from each other. An insulating support plate 9 having a layer (connection layer) 8 made of material is provided, and the internal lead wire 6 and the external lead wire 6 are connected via the insulating support plate 9.

薄膜サーミスタ素子4は絶縁性基板の一力の表面に感温
抵抗体膜と電極膜とを形成して構成される。
The thin film thermistor element 4 is constructed by forming a temperature sensitive resistor film and an electrode film on one surface of an insulating substrate.

この薄膜サーミスタ素子4は絶縁性基板の他の表面と支
持容器3の面とが相対する如く固定される。
This thin film thermistor element 4 is fixed so that the other surface of the insulating substrate and the surface of the support container 3 face each other.

この固定は無機質系あるいは有機物系接着剤、半田伺、
ロー付などの固定層1oを介してなされる。
This fixation can be done using inorganic or organic adhesive, solder, or
This is done via a fixing layer 1o such as brazing.

内部リード線6は小穴7を通して絶縁性支持板9の外に
取り出される。内部リード線5と外部リード線6とは接
続層8部分で半田もしくはロー材11により接続される
。絶縁性支持板9は支持容器3に設けられた爪12によ
り、支持容器3に固定される。従ってサーミスタ素子4
と内部リード線6との接続部に応力は印加されない。ま
だ内部リード線5と外部リード線6との接続部の引張強
度は2 Kf以1−か?!)られ、実用上充分であった
The internal lead wire 6 is taken out of the insulating support plate 9 through a small hole 7. The internal lead wire 5 and the external lead wire 6 are connected by solder or brazing material 11 at the connection layer 8 portion. The insulating support plate 9 is fixed to the support container 3 by claws 12 provided on the support container 3. Therefore, thermistor element 4
No stress is applied to the connection portion between and the internal lead wire 6. Is the tensile strength of the connection between the internal lead wire 5 and the external lead wire 6 still greater than 2 Kf? ! ), which was sufficient for practical use.

以上の如く本実施例のサーミスタの各接続部には応力が
実質的に印加されないか、もしくは機械的((実用−」
二充分な強度を有するので断線は発生しない。
As described above, stress is not substantially applied to each connection part of the thermistor of this embodiment, or mechanical ((practical)
2. Since it has sufficient strength, disconnection will not occur.

なお接続層8にはAg 、Ag−Pd 、Au 、’A
u −Pt 。
Note that the connection layer 8 includes Ag, Ag-Pd, Au, 'A
u-Pt.

ptなどの厚膜電極膜、Ct、Niなとの上にCu。Cu on thick film electrode film such as PT, Ct, Ni etc.

八u、Agなどを積層した蒸着膜、あるいはW。Vapor deposited film laminated with silver, Ag, etc., or W.

Mo、Ni、Mnの群から選ばれた1種もしくは2種以
」二のメタライズ膜などが用いられる。厚膜電極膜、蒸
着膜は容易に半田付できるが、耐熱温度が(150〜3
00) ℃以下と低い欠点がある。これはAu、Agな
どが半田中へ徐々に拡散し、接着強度が低下する為と思
われる。寸だこれ性膜には同様の理由によりロー材でき
ない。しかしメタライズ膜にはロー材することができ、
且つその耐熱温度も(300〜eoo)℃が得られる。
One or more metallized films selected from the group of Mo, Ni, and Mn are used. Thick film electrode films and vapor deposited films can be easily soldered, but the heat resistance temperature is (150 to 3
00) It has the disadvantage of being low at below ℃. This is thought to be because Au, Ag, etc. gradually diffuse into the solder, reducing adhesive strength. For the same reason, brazing cannot be used for thin films. However, a brazing material can be used for the metallized film,
Moreover, its heat resistance temperature is (300 to eoo)°C.

実際Wメタライズ膜に銀ロー材したところ(20〜60
)”/ / cniの引張強度が得られた。
In fact, when silver brazing material was applied to W metallized film (20 to 60
)''//cni tensile strength was obtained.

従ってサーミスタの使用温度は高温まで可能とな。Therefore, thermistors can be used at high temperatures.

る。前述の如く鍋底1にサーミスタを接触ぜしめ、鍋内
部の温度を検出する場合、調理温度は50〜350℃の
範囲にわたるのでメタライズ膜が軽重しい。
Ru. When the thermistor is brought into contact with the pot bottom 1 to detect the temperature inside the pot as described above, the metallized film is light and heavy since the cooking temperature ranges from 50 to 350°C.

また絶縁性支持板9はアルミナ、ムライト、ベリリアな
どが用いられる。
Further, the insulating support plate 9 is made of alumina, mullite, beryllia, or the like.

また前記説明では絶縁性支持板9を爪12で固定した構
成を示したが、この場合機械的に固定しているので微少
なすき間が生じる。この結果しよう油、油などの蒸気、
微滴などを含む高温の空気雰四下において、これ等蒸気
、微滴などが支持容器3の内部に入り、薄膜サーミスタ
素子4が汚れる場合かある。この汚れによりサーミスタ
素子4の牛1性変動がη−じるので、この種汚れを除去
しなければならない。この様な場合絶縁性支持板9の周
辺部9八に前述の如きメタライズ膜13を形成し、この
メタライズ膜13と支持容器30周辺部3Aとをロー刊
することが好ましい。この構成を第3図に示す。支持容
器3の周辺部3八と絶縁性支持板9の周辺Ffli 9
 Aとはロー材14により固定されている。この結果支
持容器3と絶縁性支持板9とは一体化され、両者が機械
的に強固に、接続されるのみならず、それらの周辺部3
A 、9Aを通って蒸ぐ、微滴などが支持容器3の内部
に入ることはない。なおこの時小穴7はロー)l」11
により密封される。このように第3図構成は支持容器3
の内部づL完全1/(二気密にト:(つことかできるの
で、外部雰囲気(・こ」、す7tす膜サーミスタ素子4
が汚れることはない。。
Further, in the above description, a configuration was shown in which the insulating support plate 9 was fixed with the claws 12, but in this case, since it is fixed mechanically, a slight gap occurs. As a result, steam from oil, oil, etc.
In a high-temperature air atmosphere containing fine droplets, steam, fine droplets, etc. may enter the support container 3 and stain the thin film thermistor element 4. Since this dirt causes the fluctuation of the thermistor element 4 to decrease by .eta., this kind of dirt must be removed. In such a case, it is preferable to form a metallized film 13 as described above on the peripheral part 98 of the insulating support plate 9, and to print this metallized film 13 and the peripheral part 3A of the support container 30 in a roll. This configuration is shown in FIG. The peripheral part 38 of the support container 3 and the peripheral part Ffli 9 of the insulating support plate 9
It is fixed to A by brazing material 14. As a result, the support container 3 and the insulating support plate 9 are integrated, and not only are they mechanically and firmly connected, but also their peripheral parts 3
A, 9A, steaming, minute droplets, etc. will not enter the inside of the support container 3. At this time, the small hole 7 is set to low) 11
sealed by. In this way, the structure shown in FIG.
The inside of the film thermistor element 4 is completely airtight.
will not become dirty. .

発明の効果 本発明(:11、支J−1芥滞に薄膜サーミスタ素子を
同定し、内部リード綜、外部リート線を取り出して成る
サーミスタにおいて、少なくとも支持容器の端部に複数
個の小穴を有し、かつこの小穴の周辺部に、相互に電気
的に分離される如く半1]」イ;」もしくはロー材でき
る層(接続層)を有する絶縁性支持板を設け、この絶縁
性支持板を介して内部IJ−ド線と外部リード線とを接
続する構成であるのでサーミスタの各接続部には応力が
実質的に印加されないか、もしくは機械的に実用上充分
な強度を有するので断線は発生せず、また面j熱性もよ
く外部雰囲気により内部の薄膜サーミスタか汚れること
もないなどきわめてすぐれた効果を奏するものである。
Effects of the Invention The present invention (:11) A thermistor in which a thin film thermistor element is identified in a support J-1 container and an internal lead heald and an external lead wire are taken out, which has a plurality of small holes at least at the end of the support container. In addition, an insulating support plate having a layer (connection layer) made of semi-conductor or brazing material is provided around the small hole so as to be electrically isolated from each other, and this insulating support plate is Because the structure connects the internal IJ lead wire and the external lead wire through the thermistor, there is virtually no stress applied to each connection part of the thermistor, or the wire has sufficient mechanical strength for practical use, so disconnection does not occur. It also has excellent thermal properties, and the internal thin-film thermistor does not become contaminated by the external atmosphere.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来例の構成を示す断面図、第2図。 第3図は本発明による一実施例の構成を示す断面図であ
る6゜ 3・・・支持容器、3A・・・・・・支持容器30周辺
部、4・・・・・薄膜サーミスタ素子、6・・・・・・
内部リード線、6・・・・・・外部リード線、7・・・
・・・小穴、8・・・・・半田付もしくはロー材できる
層(接続層)、9・・・・・・絶縁性支持板、9A・・
・・・・絶縁性支持板9の周辺部、10・・・・・・固
定層、11・・・・・ロー月、12・・・・・爪、13
・・・・・メタライズ膜、14・・・ ロー材。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名区 区        。 H≦ 12−
FIG. 1 is a sectional view showing the configuration of a conventional example, and FIG. FIG. 3 is a cross-sectional view showing the configuration of an embodiment according to the present invention. 6° 3...Support container, 3A...Support container 30 periphery, 4...Thin film thermistor element, 6...
Internal lead wire, 6... External lead wire, 7...
... Small hole, 8 ... Layer that can be soldered or brazed (connection layer), 9 ... Insulating support plate, 9A ...
... Peripheral part of insulating support plate 9, 10 ... Fixed layer, 11 ... Low moon, 12 ... Nail, 13
...metalized film, 14... brazing material. Name of agent: Patent attorney Toshio Nakao and one other person. H≦12-

Claims (3)

【特許請求の範囲】[Claims] (1)支持容器に薄膜サーミスタ素子を固定し、内部リ
ード線、外部リード線を取り出して成るサーミスタにお
いて、少なくとも支持容器の端部に複数個の小穴を有し
、かつこの小穴の周辺部に、相互に電気的に分離される
如く半田付もしくはロー付できる層(接続層)を有する
絶縁性支持板を設け、この絶縁性支持板を介して内部ソ
ー1゛線と外部リード線とを接続するサーミスタ。
(1) A thermistor formed by fixing a thin film thermistor element to a support container and taking out an internal lead wire and an external lead wire, which has a plurality of small holes at least at the end of the support container, and around the small holes, An insulating support plate having a layer (connection layer) that can be soldered or brazed so as to be electrically isolated from each other is provided, and the internal saw 1' wire and the external lead wire are connected via this insulating support plate. thermistor.
(2)接続層がW 、 Mo 、 Ni 、 Mnの群
から選ばれた1種もしくは2種以上のメタライズ膜であ
る特許請求の範囲第1項記載のサーミスタ。
(2) The thermistor according to claim 1, wherein the connection layer is a metalized film of one or more types selected from the group of W, Mo, Ni, and Mn.
(3)絶縁性支持板の周辺部にW 、 Mo 、 Ni
 、 Mnの群から選ばれた1種もしくは2種以上のメ
タライズ膜を形成する特許請求の範囲第2項記載のサー
。 ミスタ。
(3) W, Mo, Ni on the periphery of the insulating support plate
, Mn, forming one or more metallized films. Mister.
JP14135883A 1983-08-01 1983-08-01 Thermistor Pending JPS5951503A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14135883A JPS5951503A (en) 1983-08-01 1983-08-01 Thermistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14135883A JPS5951503A (en) 1983-08-01 1983-08-01 Thermistor

Publications (1)

Publication Number Publication Date
JPS5951503A true JPS5951503A (en) 1984-03-26

Family

ID=15290118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14135883A Pending JPS5951503A (en) 1983-08-01 1983-08-01 Thermistor

Country Status (1)

Country Link
JP (1) JPS5951503A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219502A (en) * 1986-03-19 1987-09-26 松下電器産業株式会社 Thin film thermistor
JPS63105832U (en) * 1986-12-26 1988-07-08
JPH02271947A (en) * 1989-04-11 1990-11-06 Denki Kagaku Kogyo Kk Underwater concrete composition
JPH0388755A (en) * 1989-09-01 1991-04-15 Denki Kagaku Kogyo Kk Quick hardening injection material and cement composition for injection with it utilized therefor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219502A (en) * 1986-03-19 1987-09-26 松下電器産業株式会社 Thin film thermistor
JPS63105832U (en) * 1986-12-26 1988-07-08
JPH02271947A (en) * 1989-04-11 1990-11-06 Denki Kagaku Kogyo Kk Underwater concrete composition
JPH0388755A (en) * 1989-09-01 1991-04-15 Denki Kagaku Kogyo Kk Quick hardening injection material and cement composition for injection with it utilized therefor

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