JPS5931065A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5931065A
JPS5931065A JP57140955A JP14095582A JPS5931065A JP S5931065 A JPS5931065 A JP S5931065A JP 57140955 A JP57140955 A JP 57140955A JP 14095582 A JP14095582 A JP 14095582A JP S5931065 A JPS5931065 A JP S5931065A
Authority
JP
Japan
Prior art keywords
gas
heat treatment
film
semiconductor device
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57140955A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0478021B2 (cs
Inventor
Shinichi Ofuji
大藤　晋一
Chisato Hashimoto
橋本　千里
Noboru Shiono
塩野　登
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57140955A priority Critical patent/JPS5931065A/ja
Publication of JPS5931065A publication Critical patent/JPS5931065A/ja
Publication of JPH0478021B2 publication Critical patent/JPH0478021B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57140955A 1982-08-16 1982-08-16 半導体装置の製造方法 Granted JPS5931065A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57140955A JPS5931065A (ja) 1982-08-16 1982-08-16 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57140955A JPS5931065A (ja) 1982-08-16 1982-08-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5931065A true JPS5931065A (ja) 1984-02-18
JPH0478021B2 JPH0478021B2 (cs) 1992-12-10

Family

ID=15280698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57140955A Granted JPS5931065A (ja) 1982-08-16 1982-08-16 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5931065A (cs)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5481082A (en) * 1977-12-12 1979-06-28 Fujitsu Ltd Manufacture of semiconductor
JPS5670646A (en) * 1979-11-13 1981-06-12 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5481082A (en) * 1977-12-12 1979-06-28 Fujitsu Ltd Manufacture of semiconductor
JPS5670646A (en) * 1979-11-13 1981-06-12 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPH0478021B2 (cs) 1992-12-10

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