JPS5928340A - エッチング終点検出方法 - Google Patents

エッチング終点検出方法

Info

Publication number
JPS5928340A
JPS5928340A JP13730682A JP13730682A JPS5928340A JP S5928340 A JPS5928340 A JP S5928340A JP 13730682 A JP13730682 A JP 13730682A JP 13730682 A JP13730682 A JP 13730682A JP S5928340 A JPS5928340 A JP S5928340A
Authority
JP
Japan
Prior art keywords
etching
spectral intensity
waveform
end point
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13730682A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0468772B2 (enrdf_load_stackoverflow
Inventor
Takashi Kamimura
隆 上村
Tetsuzo Tanimoto
谷本　哲三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13730682A priority Critical patent/JPS5928340A/ja
Publication of JPS5928340A publication Critical patent/JPS5928340A/ja
Publication of JPH0468772B2 publication Critical patent/JPH0468772B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP13730682A 1982-08-09 1982-08-09 エッチング終点検出方法 Granted JPS5928340A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13730682A JPS5928340A (ja) 1982-08-09 1982-08-09 エッチング終点検出方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13730682A JPS5928340A (ja) 1982-08-09 1982-08-09 エッチング終点検出方法

Publications (2)

Publication Number Publication Date
JPS5928340A true JPS5928340A (ja) 1984-02-15
JPH0468772B2 JPH0468772B2 (enrdf_load_stackoverflow) 1992-11-04

Family

ID=15195598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13730682A Granted JPS5928340A (ja) 1982-08-09 1982-08-09 エッチング終点検出方法

Country Status (1)

Country Link
JP (1) JPS5928340A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01226153A (ja) * 1988-03-07 1989-09-08 Hitachi Ltd エッチング終点判定装置
JPH01235336A (ja) * 1988-03-16 1989-09-20 Hitachi Ltd エッチング終点判定装置
JPH01241127A (ja) * 1988-03-23 1989-09-26 Hitachi Ltd エッチング終点判定方法
JPH01274429A (ja) * 1988-04-27 1989-11-02 Hitachi Ltd エッチング終点判定装置
JPH04240727A (ja) * 1991-01-24 1992-08-28 Mitsubishi Electric Corp プラズマ処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56129325A (en) * 1980-03-14 1981-10-09 Fujitsu Ltd Dry etching

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56129325A (en) * 1980-03-14 1981-10-09 Fujitsu Ltd Dry etching

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01226153A (ja) * 1988-03-07 1989-09-08 Hitachi Ltd エッチング終点判定装置
JPH01235336A (ja) * 1988-03-16 1989-09-20 Hitachi Ltd エッチング終点判定装置
JPH01241127A (ja) * 1988-03-23 1989-09-26 Hitachi Ltd エッチング終点判定方法
JPH01274429A (ja) * 1988-04-27 1989-11-02 Hitachi Ltd エッチング終点判定装置
JPH04240727A (ja) * 1991-01-24 1992-08-28 Mitsubishi Electric Corp プラズマ処理装置

Also Published As

Publication number Publication date
JPH0468772B2 (enrdf_load_stackoverflow) 1992-11-04

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