JPS5925245A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5925245A
JPS5925245A JP13416582A JP13416582A JPS5925245A JP S5925245 A JPS5925245 A JP S5925245A JP 13416582 A JP13416582 A JP 13416582A JP 13416582 A JP13416582 A JP 13416582A JP S5925245 A JPS5925245 A JP S5925245A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
layer
substrate
semiconductor
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13416582A
Inventor
Yoshiaki Tanimoto
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE:To inhibit a projection through heat treatment of an Al layer by continuously coating the upper section of a semiconductor substrate with an Al film and an inorganic insulating film, patterning the insulating film, thermally treating the whole at a high temperature and patterning a wiring layer consisting of the Al film. CONSTITUTION:The upper section of the semiconductor substrate 11 is coated with the Al film 12 and the SiO2 film 13. A resist film 14 is applied, only a wiring layer forming section is masked through patterning, and the SiO2 film 13 exposed is removed through dry etching. When the resist film 14 is removed and the whole is thermally treated, the Al projections S are formed in the Al film exposed. The surface is dry-etched while using the SiO2 film 13 as a mask, the Al film 12 is patterned, and the desired Al wiring layer is formed. The substrate 11 is heated, and a PSG film is applied.
JP13416582A 1982-07-30 1982-07-30 Manufacture of semiconductor device Pending JPS5925245A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13416582A JPS5925245A (en) 1982-07-30 1982-07-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13416582A JPS5925245A (en) 1982-07-30 1982-07-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5925245A true true JPS5925245A (en) 1984-02-09

Family

ID=15121966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13416582A Pending JPS5925245A (en) 1982-07-30 1982-07-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5925245A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164339A (en) * 1988-09-30 1992-11-17 Siemens-Bendix Automotive Electronics L.P. Fabrication of oxynitride frontside microstructures
US5369053A (en) * 1989-10-24 1994-11-29 Hewlett-Packard Company Method for patterning aluminum metallizations
EP1168432A2 (en) * 2000-06-01 2002-01-02 Texas Instruments Incorporated Method of integrating a thin film resistor in a multi-level metal tungsten-plug interconnect

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164339A (en) * 1988-09-30 1992-11-17 Siemens-Bendix Automotive Electronics L.P. Fabrication of oxynitride frontside microstructures
US5369053A (en) * 1989-10-24 1994-11-29 Hewlett-Packard Company Method for patterning aluminum metallizations
EP1168432A2 (en) * 2000-06-01 2002-01-02 Texas Instruments Incorporated Method of integrating a thin film resistor in a multi-level metal tungsten-plug interconnect

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