JPS5924300A - 放射線変換用シンチレ−シヨンスクリ−ン及びその製造方法 - Google Patents
放射線変換用シンチレ−シヨンスクリ−ン及びその製造方法Info
- Publication number
- JPS5924300A JPS5924300A JP12627183A JP12627183A JPS5924300A JP S5924300 A JPS5924300 A JP S5924300A JP 12627183 A JP12627183 A JP 12627183A JP 12627183 A JP12627183 A JP 12627183A JP S5924300 A JPS5924300 A JP S5924300A
- Authority
- JP
- Japan
- Prior art keywords
- screen
- layer
- scintillation
- screen according
- photocathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title claims description 18
- 238000006243 chemical reaction Methods 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000463 material Substances 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 17
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 229910052716 thallium Inorganic materials 0.000 claims description 5
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 5
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 229910001610 cryolite Inorganic materials 0.000 claims description 2
- 210000003298 dental enamel Anatomy 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000464 lead oxide Inorganic materials 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 229910001120 nichrome Inorganic materials 0.000 claims description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000005251 gamma ray Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/38—Photoelectric screens; Charge-storage screens not using charge storage, e.g. photo-emissive screen, extended cathode
- H01J29/385—Photocathodes comprising a layer which modified the wave length of impinging radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Conversion Of X-Rays Into Visible Images (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8212285 | 1982-07-13 | ||
| FR8212285A FR2530367A1 (fr) | 1982-07-13 | 1982-07-13 | Ecran scintillateur convertisseur de rayonnement et procede de fabrication d'un tel ecran |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5924300A true JPS5924300A (ja) | 1984-02-07 |
| JPH0458000B2 JPH0458000B2 (enrdf_load_stackoverflow) | 1992-09-16 |
Family
ID=9275953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12627183A Granted JPS5924300A (ja) | 1982-07-13 | 1983-07-13 | 放射線変換用シンチレ−シヨンスクリ−ン及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0099285B1 (enrdf_load_stackoverflow) |
| JP (1) | JPS5924300A (enrdf_load_stackoverflow) |
| DE (1) | DE3369420D1 (enrdf_load_stackoverflow) |
| FR (1) | FR2530367A1 (enrdf_load_stackoverflow) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63262600A (ja) * | 1987-04-20 | 1988-10-28 | 富士写真フイルム株式会社 | 放射線像変換パネルおよびその製造法 |
| US4935617A (en) * | 1988-03-04 | 1990-06-19 | Kabushiki Kaisha Toshiba | X-ray image intensifier and method of manufacturing the same |
| JP2002243859A (ja) * | 2001-02-09 | 2002-08-28 | Canon Inc | 放射線検出装置及びその製造方法 |
| WO2005031388A1 (ja) * | 2003-09-29 | 2005-04-07 | Kabushiki Kaisha Toshiba | カラ－シンチレータおよびイメージセンサ |
| US7662427B2 (en) | 1998-06-18 | 2010-02-16 | Hamamatsu Photonics K.K. | Organic film vapor deposition method |
| JP2011002472A (ja) * | 2000-09-11 | 2011-01-06 | Hamamatsu Photonics Kk | シンチレータパネル、放射線イメージセンサの製造方法 |
| CN102918418A (zh) * | 2010-05-25 | 2013-02-06 | 富士胶片株式会社 | 放射线成像装置 |
| JP2015200528A (ja) * | 2014-04-04 | 2015-11-12 | キヤノン株式会社 | 放射線撮像装置およびその製造方法、並びに放射線撮像システム |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| HU195335B (en) * | 1984-11-05 | 1988-04-28 | Peter Teleki | Method and modifying body for influencing effect on a target sensitive to radiation exerted by x-ray or gamma radiation |
| EP0185534B1 (en) * | 1984-12-17 | 1990-06-20 | Konica Corporation | Radiation image storage panel |
| NL8500981A (nl) * | 1985-04-03 | 1986-11-03 | Philips Nv | Roentgenbeeldversterkerbuis met een secundaire stralings absorberende luminescentielaag. |
| NL8502570A (nl) * | 1985-09-20 | 1987-04-16 | Philips Nv | Roentgenbeeldversterkerbuis met geoeptimaliseerde microstructuur. |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3852131A (en) * | 1972-05-17 | 1974-12-03 | Gen Electric | Method of manufacturing x-ray image intensifier input phosphor screen |
| JPS5411784A (en) * | 1977-06-27 | 1979-01-29 | Hewlett Packard Yokogawa | Optical fiber scintillator and production method thereof |
| JPS5519029A (en) * | 1978-07-25 | 1980-02-09 | Ryosaku Kakimoto | Production of natto (fermented soybean) frozen with liquid nitrogen in laminated carton vessel |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3030313A (en) * | 1958-06-19 | 1962-04-17 | Du Pont | Process for making thallium activated potassium iodide phosphor |
| US3795531A (en) * | 1970-02-03 | 1974-04-05 | Varian Associates | X-ray image intensifier tube and method of making same |
| BE786084A (fr) * | 1971-07-10 | 1973-01-10 | Philips Nv | Ecran luminescent a structure en mosaique |
| US4184077A (en) * | 1976-05-11 | 1980-01-15 | Tokyo Shibaura Electric Co., Ltd. | Input screen of an image intensifier |
| DE2810920C2 (de) * | 1977-03-14 | 1987-01-15 | Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa | Verfahren zur Herstellung eines Bildschirmes einer Bildverstärkerröhre |
| DE3175963D1 (en) * | 1980-06-16 | 1987-04-09 | Toshiba Kk | Radiation excited phosphor screen and method for manufacturing the same |
-
1982
- 1982-07-13 FR FR8212285A patent/FR2530367A1/fr active Granted
-
1983
- 1983-07-04 EP EP83401370A patent/EP0099285B1/fr not_active Expired
- 1983-07-04 DE DE8383401370T patent/DE3369420D1/de not_active Expired
- 1983-07-13 JP JP12627183A patent/JPS5924300A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3852131A (en) * | 1972-05-17 | 1974-12-03 | Gen Electric | Method of manufacturing x-ray image intensifier input phosphor screen |
| JPS5411784A (en) * | 1977-06-27 | 1979-01-29 | Hewlett Packard Yokogawa | Optical fiber scintillator and production method thereof |
| JPS5519029A (en) * | 1978-07-25 | 1980-02-09 | Ryosaku Kakimoto | Production of natto (fermented soybean) frozen with liquid nitrogen in laminated carton vessel |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63262600A (ja) * | 1987-04-20 | 1988-10-28 | 富士写真フイルム株式会社 | 放射線像変換パネルおよびその製造法 |
| US4935617A (en) * | 1988-03-04 | 1990-06-19 | Kabushiki Kaisha Toshiba | X-ray image intensifier and method of manufacturing the same |
| US7662427B2 (en) | 1998-06-18 | 2010-02-16 | Hamamatsu Photonics K.K. | Organic film vapor deposition method |
| US7897938B2 (en) | 1998-06-18 | 2011-03-01 | Hamamatsu Photonics K.K. | Scintillator panel |
| JP2011002472A (ja) * | 2000-09-11 | 2011-01-06 | Hamamatsu Photonics Kk | シンチレータパネル、放射線イメージセンサの製造方法 |
| JP2002243859A (ja) * | 2001-02-09 | 2002-08-28 | Canon Inc | 放射線検出装置及びその製造方法 |
| WO2005031388A1 (ja) * | 2003-09-29 | 2005-04-07 | Kabushiki Kaisha Toshiba | カラ－シンチレータおよびイメージセンサ |
| CN102918418A (zh) * | 2010-05-25 | 2013-02-06 | 富士胶片株式会社 | 放射线成像装置 |
| JP2015200528A (ja) * | 2014-04-04 | 2015-11-12 | キヤノン株式会社 | 放射線撮像装置およびその製造方法、並びに放射線撮像システム |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2530367B1 (enrdf_load_stackoverflow) | 1985-02-22 |
| EP0099285A1 (fr) | 1984-01-25 |
| JPH0458000B2 (enrdf_load_stackoverflow) | 1992-09-16 |
| DE3369420D1 (en) | 1987-02-26 |
| EP0099285B1 (fr) | 1987-01-21 |
| FR2530367A1 (fr) | 1984-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3789785B2 (ja) | 放射線イメージセンサ | |
| US7402814B2 (en) | Solid-state x-ray detector | |
| JPS5924300A (ja) | 放射線変換用シンチレ−シヨンスクリ−ン及びその製造方法 | |
| JP2011017683A (ja) | 放射線画像検出器及びその製造方法 | |
| JP2013029384A (ja) | 放射線検出装置、その製造方法および放射線検出システム | |
| US3473066A (en) | X-ray image intensifier tube having a non-specular backing for the scintillator layer | |
| US3783297A (en) | X-ray image intensifier input phosphor screen and method of manufacture thereof | |
| US4023039A (en) | Luminescent screen and image-converter tubes utilizing such a screen | |
| JPH04501482A (ja) | 放射線像増倍管用入力スクリーン | |
| EP0199426B1 (en) | Radiographic image intensifier | |
| US4820926A (en) | Radiation conversion screen | |
| JP6576064B2 (ja) | 放射線検出装置、放射線撮像システム及び放射線検出装置の製造方法 | |
| US4656359A (en) | Scintillation crystal for a radiation detector | |
| JP2006058099A (ja) | 放射線シンチレータおよび放射線画像検出器 | |
| JP2004333381A (ja) | 放射線検出装置、及びその製造方法 | |
| JPH0690910B2 (ja) | Ｘ線像増倍管 | |
| US2829265A (en) | Electrode structrue for imaging device | |
| JPS59207551A (ja) | Ｘ線像増倍管 | |
| JP2010256067A (ja) | シンチレータ構造 | |
| US5025163A (en) | Radiographic imaging screen | |
| JP7543167B2 (ja) | 放射線撮像装置、センサパネル、センサパネルの製造方法、および放射線撮像システム | |
| JP2020204488A (ja) | 放射線検出装置及び放射線撮影システム | |
| JP2003215252A (ja) | 放射線検出装置 | |
| JP2019049437A (ja) | 放射線検出装置及び放射線検出システム | |
| JPH01114782A (ja) | Ｘ線検出器 |