JPS59232417A - 半導体ウエ−ハのレジスト現像装置 - Google Patents

半導体ウエ−ハのレジスト現像装置

Info

Publication number
JPS59232417A
JPS59232417A JP10672883A JP10672883A JPS59232417A JP S59232417 A JPS59232417 A JP S59232417A JP 10672883 A JP10672883 A JP 10672883A JP 10672883 A JP10672883 A JP 10672883A JP S59232417 A JPS59232417 A JP S59232417A
Authority
JP
Japan
Prior art keywords
developer
wafer
semiconductor wafer
center
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10672883A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04379B2 (enrdf_load_stackoverflow
Inventor
Terumi Rokushiya
六車　輝美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP10672883A priority Critical patent/JPS59232417A/ja
Publication of JPS59232417A publication Critical patent/JPS59232417A/ja
Publication of JPH04379B2 publication Critical patent/JPH04379B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP10672883A 1983-06-16 1983-06-16 半導体ウエ−ハのレジスト現像装置 Granted JPS59232417A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10672883A JPS59232417A (ja) 1983-06-16 1983-06-16 半導体ウエ−ハのレジスト現像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10672883A JPS59232417A (ja) 1983-06-16 1983-06-16 半導体ウエ−ハのレジスト現像装置

Publications (2)

Publication Number Publication Date
JPS59232417A true JPS59232417A (ja) 1984-12-27
JPH04379B2 JPH04379B2 (enrdf_load_stackoverflow) 1992-01-07

Family

ID=14440992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10672883A Granted JPS59232417A (ja) 1983-06-16 1983-06-16 半導体ウエ−ハのレジスト現像装置

Country Status (1)

Country Link
JP (1) JPS59232417A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61160930A (ja) * 1985-01-09 1986-07-21 Dainippon Screen Mfg Co Ltd 基板の表面処理液供給方法
JPS61140355U (enrdf_load_stackoverflow) * 1985-02-20 1986-08-30
JPH01302819A (ja) * 1988-05-31 1989-12-06 Fujitsu Ltd スプレィ現像装置
JPH0312918A (ja) * 1989-06-12 1991-01-21 Fujitsu Ltd スプレー現像方法
JPH0390431U (enrdf_load_stackoverflow) * 1989-12-28 1991-09-13
US5416047A (en) * 1990-09-07 1995-05-16 Tokyo Electron Limited Method for applying process solution to substrates

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61160930A (ja) * 1985-01-09 1986-07-21 Dainippon Screen Mfg Co Ltd 基板の表面処理液供給方法
JPS61140355U (enrdf_load_stackoverflow) * 1985-02-20 1986-08-30
JPH01302819A (ja) * 1988-05-31 1989-12-06 Fujitsu Ltd スプレィ現像装置
JPH0312918A (ja) * 1989-06-12 1991-01-21 Fujitsu Ltd スプレー現像方法
JPH0390431U (enrdf_load_stackoverflow) * 1989-12-28 1991-09-13
US5416047A (en) * 1990-09-07 1995-05-16 Tokyo Electron Limited Method for applying process solution to substrates

Also Published As

Publication number Publication date
JPH04379B2 (enrdf_load_stackoverflow) 1992-01-07

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