JPS59217360A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59217360A
JPS59217360A JP58090640A JP9064083A JPS59217360A JP S59217360 A JPS59217360 A JP S59217360A JP 58090640 A JP58090640 A JP 58090640A JP 9064083 A JP9064083 A JP 9064083A JP S59217360 A JPS59217360 A JP S59217360A
Authority
JP
Japan
Prior art keywords
layer
electrode
semiconductor substrate
layers
ohmic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58090640A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0524672B2 (enrdf_load_stackoverflow
Inventor
Shunichi Kai
開　俊一
Naohisa Iijima
飯島　巨久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Components Co Ltd
Original Assignee
Toshiba Corp
Toshiba Components Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Components Co Ltd filed Critical Toshiba Corp
Priority to JP58090640A priority Critical patent/JPS59217360A/ja
Publication of JPS59217360A publication Critical patent/JPS59217360A/ja
Publication of JPH0524672B2 publication Critical patent/JPH0524672B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP58090640A 1983-05-25 1983-05-25 半導体装置 Granted JPS59217360A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58090640A JPS59217360A (ja) 1983-05-25 1983-05-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58090640A JPS59217360A (ja) 1983-05-25 1983-05-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS59217360A true JPS59217360A (ja) 1984-12-07
JPH0524672B2 JPH0524672B2 (enrdf_load_stackoverflow) 1993-04-08

Family

ID=14004094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58090640A Granted JPS59217360A (ja) 1983-05-25 1983-05-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS59217360A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652444A (en) * 1995-09-22 1997-07-29 Hughes Electronics Structure and method for making FETs and HEMTs insensitive to hydrogen gas
US10644211B2 (en) * 2011-03-22 2020-05-05 Micron Technology, Inc. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652444A (en) * 1995-09-22 1997-07-29 Hughes Electronics Structure and method for making FETs and HEMTs insensitive to hydrogen gas
US10644211B2 (en) * 2011-03-22 2020-05-05 Micron Technology, Inc. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
US11211537B2 (en) 2011-03-22 2021-12-28 Micron Technology, Inc. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
US12170348B2 (en) 2011-03-22 2024-12-17 Micron Technology, Inc. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing

Also Published As

Publication number Publication date
JPH0524672B2 (enrdf_load_stackoverflow) 1993-04-08

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