JPS59211284A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59211284A
JPS59211284A JP58086149A JP8614983A JPS59211284A JP S59211284 A JPS59211284 A JP S59211284A JP 58086149 A JP58086149 A JP 58086149A JP 8614983 A JP8614983 A JP 8614983A JP S59211284 A JPS59211284 A JP S59211284A
Authority
JP
Japan
Prior art keywords
resistance
negative
semiconductor device
junction
negative resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58086149A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0550149B2 (https=
Inventor
Tatsuji Masuda
増田　達治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP58086149A priority Critical patent/JPS59211284A/ja
Publication of JPS59211284A publication Critical patent/JPS59211284A/ja
Publication of JPH0550149B2 publication Critical patent/JPH0550149B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
JP58086149A 1983-05-16 1983-05-16 半導体装置 Granted JPS59211284A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58086149A JPS59211284A (ja) 1983-05-16 1983-05-16 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58086149A JPS59211284A (ja) 1983-05-16 1983-05-16 半導体装置

Publications (2)

Publication Number Publication Date
JPS59211284A true JPS59211284A (ja) 1984-11-30
JPH0550149B2 JPH0550149B2 (https=) 1993-07-28

Family

ID=13878678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58086149A Granted JPS59211284A (ja) 1983-05-16 1983-05-16 半導体装置

Country Status (1)

Country Link
JP (1) JPS59211284A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229636A (en) * 1987-09-01 1993-07-20 Tatsuji Masuda Negative effective mass semiconductor device and circuit
WO1999003204A1 (en) * 1997-07-08 1999-01-21 Tatsuji Masuda Sr flip flop

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834467A (https=) * 1971-09-07 1973-05-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834467A (https=) * 1971-09-07 1973-05-18

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229636A (en) * 1987-09-01 1993-07-20 Tatsuji Masuda Negative effective mass semiconductor device and circuit
WO1999003204A1 (en) * 1997-07-08 1999-01-21 Tatsuji Masuda Sr flip flop
US6239638B1 (en) 1997-07-08 2001-05-29 Tatsuji Masuda SR flip flop

Also Published As

Publication number Publication date
JPH0550149B2 (https=) 1993-07-28

Similar Documents

Publication Publication Date Title
US2660624A (en) High input impedance semiconductor amplifier
JPH01165090A (ja) バックバイアス電圧発生回路
US2843761A (en) High speed transistor flip-flops
JP3284491B2 (ja) Ｓｒフリップ・フロップ
JPS59211284A (ja) 半導体装置
GB871787A (en) Transistor monostable two-state apparatus
JPS59211283A (ja) 半導体装置
JPS6049678A (ja) 半導体装置
US3963977A (en) Frequency multiplier with nonlinear semiconductor element
JP2020096003A5 (https=)
JPS61142777A (ja) 半導体装置
JPS5857909B2 (ja) バイポ−ラガタハンドウタイシユウセキカイロソウチ
JP3060494B2 (ja) フリップフロップ
US5229636A (en) Negative effective mass semiconductor device and circuit
JPH0127286Y2 (https=)
JPH0338708Y2 (https=)
JPS6131643B2 (https=)
US2998572A (en) Crystal amplifier
JPS59167119A (ja) 低損失高速トランジスタ
JP3198266B2 (ja) 電力用半導体モジュール
JP2528478B2 (ja) ノイズフィルタ回路
JPS62236320A (ja) 直流地絡検出装置
JPS60140878A (ja) サージ吸収用半導体装置
JPH01262655A (ja) 静電破壊保護素子
SU1396123A1 (ru) Частотно-регенеративный компаратор