JPS59208821A - 気相合成によるダイヤモンド半導体およびその製造方法 - Google Patents

気相合成によるダイヤモンド半導体およびその製造方法

Info

Publication number
JPS59208821A
JPS59208821A JP58084396A JP8439683A JPS59208821A JP S59208821 A JPS59208821 A JP S59208821A JP 58084396 A JP58084396 A JP 58084396A JP 8439683 A JP8439683 A JP 8439683A JP S59208821 A JPS59208821 A JP S59208821A
Authority
JP
Japan
Prior art keywords
diamond
semiconductor
substrate
vapor phase
phase synthesis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58084396A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0526325B2 (enExample
Inventor
Akira Doi
陽 土居
Naoharu Fujimori
直治 藤森
Takeshi Yoshioka
剛 吉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP58084396A priority Critical patent/JPS59208821A/ja
Publication of JPS59208821A publication Critical patent/JPS59208821A/ja
Publication of JPH0526325B2 publication Critical patent/JPH0526325B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/311—Thin-film BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H10P14/24—
    • H10P14/3411—
    • H10P14/3444—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond

Landscapes

  • Bipolar Transistors (AREA)
JP58084396A 1983-05-13 1983-05-13 気相合成によるダイヤモンド半導体およびその製造方法 Granted JPS59208821A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58084396A JPS59208821A (ja) 1983-05-13 1983-05-13 気相合成によるダイヤモンド半導体およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58084396A JPS59208821A (ja) 1983-05-13 1983-05-13 気相合成によるダイヤモンド半導体およびその製造方法

Publications (2)

Publication Number Publication Date
JPS59208821A true JPS59208821A (ja) 1984-11-27
JPH0526325B2 JPH0526325B2 (enExample) 1993-04-15

Family

ID=13829410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58084396A Granted JPS59208821A (ja) 1983-05-13 1983-05-13 気相合成によるダイヤモンド半導体およびその製造方法

Country Status (1)

Country Link
JP (1) JPS59208821A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6468966A (en) * 1987-09-09 1989-03-15 Tech Res Assoc Conduct Inorg Compo Field-effect transistor and manufacture thereof
JPH01158774A (ja) * 1987-12-15 1989-06-21 Tech Res Assoc Conduct Inorg Compo Ｍｉｓ型電界効果トランジスタの製造法
WO1990007796A1 (en) * 1989-01-03 1990-07-12 Massachusetts Institute Of Technology Insulator films on diamond
US4982243A (en) * 1988-03-28 1991-01-01 Sumitomo Electric Industries, Ltd. Schottky contact
JPH03278474A (ja) * 1990-03-07 1991-12-10 Sumitomo Electric Ind Ltd 半導体装置
US5072264A (en) * 1988-05-24 1991-12-10 Jones Barbara L Diamond transistor and method of manufacture thereof
US5081438A (en) * 1989-04-11 1992-01-14 Sumitomo Electric Industries, Ltd. Thermistor and its preparation
JPH04242922A (ja) * 1991-01-08 1992-08-31 Kobe Steel Ltd ダイヤモンド薄膜へのオーミック電極形成方法
US5243199A (en) * 1990-01-19 1993-09-07 Sumitomo Electric Industries, Ltd. High frequency device
US5252840A (en) * 1990-05-17 1993-10-12 Sumitomo Electric Industries, Ltd. Semiconductor device having differently doped diamond layers
US5274268A (en) * 1987-04-01 1993-12-28 Semiconductor Energy Laboratory Co., Ltd. Electric circuit having superconducting layered structure
US5541423A (en) * 1991-11-21 1996-07-30 Canon Kabushiki Kaisha Monocrystalline diamond semiconductor device and several electronic components employing same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848428A (ja) * 1981-09-17 1983-03-22 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体およびその作製方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848428A (ja) * 1981-09-17 1983-03-22 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体およびその作製方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5274268A (en) * 1987-04-01 1993-12-28 Semiconductor Energy Laboratory Co., Ltd. Electric circuit having superconducting layered structure
JPS6468966A (en) * 1987-09-09 1989-03-15 Tech Res Assoc Conduct Inorg Compo Field-effect transistor and manufacture thereof
JPH01158774A (ja) * 1987-12-15 1989-06-21 Tech Res Assoc Conduct Inorg Compo Ｍｉｓ型電界効果トランジスタの製造法
US4982243A (en) * 1988-03-28 1991-01-01 Sumitomo Electric Industries, Ltd. Schottky contact
US5072264A (en) * 1988-05-24 1991-12-10 Jones Barbara L Diamond transistor and method of manufacture thereof
WO1990007796A1 (en) * 1989-01-03 1990-07-12 Massachusetts Institute Of Technology Insulator films on diamond
US5350944A (en) * 1989-01-03 1994-09-27 Massachusetts Institute Of Technology Insulator films on diamonds
US5081438A (en) * 1989-04-11 1992-01-14 Sumitomo Electric Industries, Ltd. Thermistor and its preparation
US5243199A (en) * 1990-01-19 1993-09-07 Sumitomo Electric Industries, Ltd. High frequency device
US5132749A (en) * 1990-03-07 1992-07-21 Sumitomo Electric Industries, Ltd. Semiconductor device
JPH03278474A (ja) * 1990-03-07 1991-12-10 Sumitomo Electric Ind Ltd 半導体装置
US5252840A (en) * 1990-05-17 1993-10-12 Sumitomo Electric Industries, Ltd. Semiconductor device having differently doped diamond layers
JPH04242922A (ja) * 1991-01-08 1992-08-31 Kobe Steel Ltd ダイヤモンド薄膜へのオーミック電極形成方法
US5541423A (en) * 1991-11-21 1996-07-30 Canon Kabushiki Kaisha Monocrystalline diamond semiconductor device and several electronic components employing same

Also Published As

Publication number Publication date
JPH0526325B2 (enExample) 1993-04-15

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