JPS59208802A - 厚膜型正特性半導体素子の製造方法 - Google Patents
厚膜型正特性半導体素子の製造方法Info
- Publication number
- JPS59208802A JPS59208802A JP8444083A JP8444083A JPS59208802A JP S59208802 A JPS59208802 A JP S59208802A JP 8444083 A JP8444083 A JP 8444083A JP 8444083 A JP8444083 A JP 8444083A JP S59208802 A JPS59208802 A JP S59208802A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- positive temperature
- semiconductor element
- temperature coefficient
- glass frit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000000034 method Methods 0.000 title description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 description 16
- 239000011521 glass Substances 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 239000002482 conductive additive Substances 0.000 description 7
- 229910007948 ZrB2 Inorganic materials 0.000 description 5
- 229910002113 barium titanate Inorganic materials 0.000 description 5
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8444083A JPS59208802A (ja) | 1983-05-13 | 1983-05-13 | 厚膜型正特性半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8444083A JPS59208802A (ja) | 1983-05-13 | 1983-05-13 | 厚膜型正特性半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59208802A true JPS59208802A (ja) | 1984-11-27 |
| JPH04362B2 JPH04362B2 (enrdf_load_stackoverflow) | 1992-01-07 |
Family
ID=13830647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8444083A Granted JPS59208802A (ja) | 1983-05-13 | 1983-05-13 | 厚膜型正特性半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59208802A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04324901A (ja) * | 1991-04-25 | 1992-11-13 | Sekisui Plastics Co Ltd | チタン酸バリウム系磁器半導体の製造方法 |
-
1983
- 1983-05-13 JP JP8444083A patent/JPS59208802A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04324901A (ja) * | 1991-04-25 | 1992-11-13 | Sekisui Plastics Co Ltd | チタン酸バリウム系磁器半導体の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04362B2 (enrdf_load_stackoverflow) | 1992-01-07 |
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