JPS59201421A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59201421A
JPS59201421A JP7654383A JP7654383A JPS59201421A JP S59201421 A JPS59201421 A JP S59201421A JP 7654383 A JP7654383 A JP 7654383A JP 7654383 A JP7654383 A JP 7654383A JP S59201421 A JPS59201421 A JP S59201421A
Authority
JP
Japan
Prior art keywords
film
silicon
resist
manufacturing
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7654383A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0410220B2 (enrdf_load_stackoverflow
Inventor
Ryoichi Mukai
良一 向井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7654383A priority Critical patent/JPS59201421A/ja
Publication of JPS59201421A publication Critical patent/JPS59201421A/ja
Publication of JPH0410220B2 publication Critical patent/JPH0410220B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP7654383A 1983-04-30 1983-04-30 半導体装置の製造方法 Granted JPS59201421A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7654383A JPS59201421A (ja) 1983-04-30 1983-04-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7654383A JPS59201421A (ja) 1983-04-30 1983-04-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59201421A true JPS59201421A (ja) 1984-11-15
JPH0410220B2 JPH0410220B2 (enrdf_load_stackoverflow) 1992-02-24

Family

ID=13608179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7654383A Granted JPS59201421A (ja) 1983-04-30 1983-04-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59201421A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0410220B2 (enrdf_load_stackoverflow) 1992-02-24

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