JPS5919912B2 - カルシウム−ガリウム−ゲルマニウム系ガ−ネット単結晶，ガ−ネット単結晶基体及び泡磁区装置 - Google Patents

カルシウム−ガリウム−ゲルマニウム系ガ−ネット単結晶，ガ−ネット単結晶基体及び泡磁区装置

Info

Publication number
JPS5919912B2
JPS5919912B2 JP52070045A JP7004577A JPS5919912B2 JP S5919912 B2 JPS5919912 B2 JP S5919912B2 JP 52070045 A JP52070045 A JP 52070045A JP 7004577 A JP7004577 A JP 7004577A JP S5919912 B2 JPS5919912 B2 JP S5919912B2
Authority
JP
Japan
Prior art keywords
gallium
garnet
single crystal
germanium
calcium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52070045A
Other languages
English (en)
Japanese (ja)
Other versions
JPS531200A (en
Inventor
ヨハネス・ペトルス・マリア・ダ−メン
ヨハネス・アドリアヌス・ピストリウス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS531200A publication Critical patent/JPS531200A/ja
Publication of JPS5919912B2 publication Critical patent/JPS5919912B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/28—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
JP52070045A 1976-06-16 1977-06-15 カルシウム−ガリウム−ゲルマニウム系ガ−ネット単結晶，ガ−ネット単結晶基体及び泡磁区装置 Expired JPS5919912B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL000007606482 1976-06-16
NL7606482A NL7606482A (nl) 1976-06-16 1976-06-16 Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm.

Publications (2)

Publication Number Publication Date
JPS531200A JPS531200A (en) 1978-01-07
JPS5919912B2 true JPS5919912B2 (ja) 1984-05-09

Family

ID=19826374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52070045A Expired JPS5919912B2 (ja) 1976-06-16 1977-06-15 カルシウム−ガリウム−ゲルマニウム系ガ−ネット単結晶，ガ−ネット単結晶基体及び泡磁区装置

Country Status (7)

Country Link
US (1) US4323618A (enExample)
JP (1) JPS5919912B2 (enExample)
CH (1) CH630963A5 (enExample)
DE (1) DE2726744C3 (enExample)
FR (1) FR2354809A1 (enExample)
GB (1) GB1580848A (enExample)
NL (1) NL7606482A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8004650B2 (en) 2002-12-10 2011-08-23 Nikon Corporation Exposure apparatus and device manufacturing method
US8937704B2 (en) 2003-07-31 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a resistivity sensor
TWI474380B (zh) * 2003-05-23 2015-02-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7607959A (nl) * 1976-07-19 1978-01-23 Philips Nv Magnetisch beldomein materiaal.
NL7902293A (nl) * 1979-03-23 1980-09-25 Philips Nv Magnetische beldomein structuur en magnetische beldomeininrichting.
US4355072A (en) 1980-02-12 1982-10-19 U.S. Philips Corporation Magnetic hexagonal ferrite layer on a nonmagnetic hexagonal mixed crystal substrate
NL8800155A (nl) * 1988-01-25 1989-08-16 Philips Nv Granaat en werkwijzen voor het bereiden van een granaat.
JPH0354198A (ja) * 1989-07-20 1991-03-08 Shin Etsu Chem Co Ltd 酸化物ガーネット単結晶
CN115991993B (zh) * 2022-12-09 2024-01-26 广东省科学院资源利用与稀土开发研究所 一种防伪用钠镥镓锗石榴石基绿光荧光粉及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3429740A (en) * 1965-09-24 1969-02-25 North American Rockwell Growing garnet on non-garnet single crystal
US3788896A (en) * 1970-12-28 1974-01-29 North American Rockwell Method for producing bubble domains in magnetic film-substrate structures
US3736158A (en) * 1971-03-19 1973-05-29 G Cullen Czochralski-grown spinel for use as epitaxial silicon substrate
US3723599A (en) * 1971-08-18 1973-03-27 Bell Telephone Labor Inc Technique for growth of single crystal gallium garnet
DE2349348C2 (de) * 1972-10-07 1983-02-10 N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven Verfahren zum Züchten einer einkristallinen, wismutdotierten Yttrium- oder Seltenerdmetall-Eisen-Granatschicht
US3946372A (en) * 1974-04-15 1976-03-23 Rockwell International Corporation Characteristic temperature-derived hard bubble suppression
CA1061902A (en) 1974-04-15 1979-09-04 Paul J. Besser Orientation-derived hard bubble suppression

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8004650B2 (en) 2002-12-10 2011-08-23 Nikon Corporation Exposure apparatus and device manufacturing method
TWI474380B (zh) * 2003-05-23 2015-02-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US8937704B2 (en) 2003-07-31 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a resistivity sensor
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply

Also Published As

Publication number Publication date
FR2354809A1 (fr) 1978-01-13
US4323618A (en) 1982-04-06
FR2354809B1 (enExample) 1983-12-09
DE2726744A1 (de) 1977-12-29
GB1580848A (en) 1980-12-03
DE2726744B2 (de) 1981-04-23
DE2726744C3 (de) 1982-02-18
CH630963A5 (de) 1982-07-15
JPS531200A (en) 1978-01-07
NL7606482A (nl) 1977-12-20

Similar Documents

Publication Publication Date Title
JPS5919912B2 (ja) カルシウム−ガリウム−ゲルマニウム系ガ−ネット単結晶，ガ−ネット単結晶基体及び泡磁区装置
Nielsen Bubble domain memory materials
JPH0354198A (ja) 酸化物ガーネット単結晶
Giess et al. Rare earth-yttrium iron-gallium garnet epitaxial films for magnetic bubble domain applications
US4544438A (en) Liquid phase epitaxial growth of bismuth-containing garnet films
Katayama et al. Single crystal preparation of rare earth-cobalt intermetallic compounds by a BN-coated crucible
US4435484A (en) Device for propagating magnetic domains
Tolksdorf et al. Crystal growth of magnetic garnets from high-temperature solutions
US4434212A (en) Device for propagating magnetic domains
US3527577A (en) Magneto-optical materials
Chen et al. Microstructural changes induced by lattice instabilities in La2− xBaxCuO4 (x= 0.125) and Nd2NiO4
Nielsen Properties and preparation of magnetic materials for bubble domains
US4400445A (en) Liquid phase epitaxial growth of garnet films
US5021302A (en) Bismuth-iron garnets with large growth-induced magnetic anisotropy
JPS59122B2 (ja) バブル磁区材料の層を単結晶基板上に堆積する方法
US4499061A (en) Strontium ferrite borate
US5043231A (en) Gadolinium-lutetium-gallium garnet crystal, process for its production and substrate for magneto-optical device made thereof
JPS60134404A (ja) 磁気光学材料
JPH034518B2 (enExample)
US4414290A (en) Magnetic structure suitable for the propagation of single-walled magnetic domains
US3544265A (en) Process for lowering the magnetic reorientation temperature of samarium orthoferrite
US4354254A (en) Devices depending on garnet materials
JP3089742B2 (ja) 静磁波デバイス用材料
Huahui et al. Epitaxial growth of highly Bi-substituted garnet films with narrow FMR linewidth and low optical absorption loss
JPH05134221A (ja) 磁気光学材料、その製造法およびそれを用いた光素子