GB1580848A - Calcium-gallium-germanium garnet single crystal - Google Patents
Calcium-gallium-germanium garnet single crystal Download PDFInfo
- Publication number
- GB1580848A GB1580848A GB24520/77A GB2452077A GB1580848A GB 1580848 A GB1580848 A GB 1580848A GB 24520/77 A GB24520/77 A GB 24520/77A GB 2452077 A GB2452077 A GB 2452077A GB 1580848 A GB1580848 A GB 1580848A
- Authority
- GB
- United Kingdom
- Prior art keywords
- garnet
- bubble domain
- gallium
- single crystal
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002223 garnet Substances 0.000 title claims description 50
- 239000013078 crystal Substances 0.000 title claims description 36
- 229910052732 germanium Inorganic materials 0.000 title claims description 18
- 239000000463 material Substances 0.000 claims description 32
- 239000000203 mixture Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 24
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 37
- 239000011575 calcium Substances 0.000 description 21
- 125000004429 atom Chemical group 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- 238000004943 liquid phase epitaxy Methods 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 150000002910 rare earth metals Chemical class 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 229910000019 calcium carbonate Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229910001424 calcium ion Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 238000001691 Bridgeman technique Methods 0.000 description 1
- 102100039555 Galectin-7 Human genes 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 101000887163 Gallus gallus Gallinacin-4 Proteins 0.000 description 1
- 101000887166 Gallus gallus Gallinacin-7 Proteins 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- HYQQNEXLUDVKEL-UHFFFAOYSA-N [Ge].[Ga].[Ca] Chemical compound [Ge].[Ga].[Ca] HYQQNEXLUDVKEL-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/28—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7606482A NL7606482A (nl) | 1976-06-16 | 1976-06-16 | Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1580848A true GB1580848A (en) | 1980-12-03 |
Family
ID=19826374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB24520/77A Expired GB1580848A (en) | 1976-06-16 | 1977-06-13 | Calcium-gallium-germanium garnet single crystal |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4323618A (enExample) |
| JP (1) | JPS5919912B2 (enExample) |
| CH (1) | CH630963A5 (enExample) |
| DE (1) | DE2726744C3 (enExample) |
| FR (1) | FR2354809A1 (enExample) |
| GB (1) | GB1580848A (enExample) |
| NL (1) | NL7606482A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7607959A (nl) * | 1976-07-19 | 1978-01-23 | Philips Nv | Magnetisch beldomein materiaal. |
| NL7902293A (nl) * | 1979-03-23 | 1980-09-25 | Philips Nv | Magnetische beldomein structuur en magnetische beldomeininrichting. |
| US4355072A (en) | 1980-02-12 | 1982-10-19 | U.S. Philips Corporation | Magnetic hexagonal ferrite layer on a nonmagnetic hexagonal mixed crystal substrate |
| NL8800155A (nl) * | 1988-01-25 | 1989-08-16 | Philips Nv | Granaat en werkwijzen voor het bereiden van een granaat. |
| JPH0354198A (ja) * | 1989-07-20 | 1991-03-08 | Shin Etsu Chem Co Ltd | 酸化物ガーネット単結晶 |
| CN101424883B (zh) | 2002-12-10 | 2013-05-15 | 株式会社尼康 | 曝光设备和器件制造法 |
| TWI503865B (zh) * | 2003-05-23 | 2015-10-11 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
| US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
| CN115991993B (zh) * | 2022-12-09 | 2024-01-26 | 广东省科学院资源利用与稀土开发研究所 | 一种防伪用钠镥镓锗石榴石基绿光荧光粉及其制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3429740A (en) * | 1965-09-24 | 1969-02-25 | North American Rockwell | Growing garnet on non-garnet single crystal |
| US3788896A (en) * | 1970-12-28 | 1974-01-29 | North American Rockwell | Method for producing bubble domains in magnetic film-substrate structures |
| US3736158A (en) * | 1971-03-19 | 1973-05-29 | G Cullen | Czochralski-grown spinel for use as epitaxial silicon substrate |
| US3723599A (en) * | 1971-08-18 | 1973-03-27 | Bell Telephone Labor Inc | Technique for growth of single crystal gallium garnet |
| DE2349348C2 (de) * | 1972-10-07 | 1983-02-10 | N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven | Verfahren zum Züchten einer einkristallinen, wismutdotierten Yttrium- oder Seltenerdmetall-Eisen-Granatschicht |
| US3946372A (en) * | 1974-04-15 | 1976-03-23 | Rockwell International Corporation | Characteristic temperature-derived hard bubble suppression |
| CA1061902A (en) | 1974-04-15 | 1979-09-04 | Paul J. Besser | Orientation-derived hard bubble suppression |
-
1976
- 1976-06-16 NL NL7606482A patent/NL7606482A/xx not_active Application Discontinuation
-
1977
- 1977-06-13 GB GB24520/77A patent/GB1580848A/en not_active Expired
- 1977-06-13 CH CH725477A patent/CH630963A5/de not_active IP Right Cessation
- 1977-06-14 DE DE2726744A patent/DE2726744C3/de not_active Expired
- 1977-06-15 FR FR7718346A patent/FR2354809A1/fr active Granted
- 1977-06-15 JP JP52070045A patent/JPS5919912B2/ja not_active Expired
-
1978
- 1978-02-13 US US05/877,165 patent/US4323618A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2354809A1 (fr) | 1978-01-13 |
| US4323618A (en) | 1982-04-06 |
| FR2354809B1 (enExample) | 1983-12-09 |
| DE2726744A1 (de) | 1977-12-29 |
| DE2726744B2 (de) | 1981-04-23 |
| JPS5919912B2 (ja) | 1984-05-09 |
| DE2726744C3 (de) | 1982-02-18 |
| CH630963A5 (de) | 1982-07-15 |
| JPS531200A (en) | 1978-01-07 |
| NL7606482A (nl) | 1977-12-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |