FR2354809B1 - - Google Patents

Info

Publication number
FR2354809B1
FR2354809B1 FR7718346A FR7718346A FR2354809B1 FR 2354809 B1 FR2354809 B1 FR 2354809B1 FR 7718346 A FR7718346 A FR 7718346A FR 7718346 A FR7718346 A FR 7718346A FR 2354809 B1 FR2354809 B1 FR 2354809B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7718346A
Other languages
French (fr)
Other versions
FR2354809A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2354809A1 publication Critical patent/FR2354809A1/fr
Application granted granted Critical
Publication of FR2354809B1 publication Critical patent/FR2354809B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/28—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
FR7718346A 1976-06-16 1977-06-15 Monocristal de grenat de calcium-gallium-germanium, ainsi que substrat forme par un tel monocristal et muni d'une couche a bulles magnetiques formee par voie d'epitaxie Granted FR2354809A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7606482A NL7606482A (nl) 1976-06-16 1976-06-16 Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm.

Publications (2)

Publication Number Publication Date
FR2354809A1 FR2354809A1 (fr) 1978-01-13
FR2354809B1 true FR2354809B1 (enExample) 1983-12-09

Family

ID=19826374

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7718346A Granted FR2354809A1 (fr) 1976-06-16 1977-06-15 Monocristal de grenat de calcium-gallium-germanium, ainsi que substrat forme par un tel monocristal et muni d'une couche a bulles magnetiques formee par voie d'epitaxie

Country Status (7)

Country Link
US (1) US4323618A (enExample)
JP (1) JPS5919912B2 (enExample)
CH (1) CH630963A5 (enExample)
DE (1) DE2726744C3 (enExample)
FR (1) FR2354809A1 (enExample)
GB (1) GB1580848A (enExample)
NL (1) NL7606482A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7607959A (nl) * 1976-07-19 1978-01-23 Philips Nv Magnetisch beldomein materiaal.
NL7902293A (nl) * 1979-03-23 1980-09-25 Philips Nv Magnetische beldomein structuur en magnetische beldomeininrichting.
US4355072A (en) 1980-02-12 1982-10-19 U.S. Philips Corporation Magnetic hexagonal ferrite layer on a nonmagnetic hexagonal mixed crystal substrate
NL8800155A (nl) * 1988-01-25 1989-08-16 Philips Nv Granaat en werkwijzen voor het bereiden van een granaat.
JPH0354198A (ja) * 1989-07-20 1991-03-08 Shin Etsu Chem Co Ltd 酸化物ガーネット単結晶
CN101424883B (zh) 2002-12-10 2013-05-15 株式会社尼康 曝光设备和器件制造法
TWI503865B (zh) * 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
CN115991993B (zh) * 2022-12-09 2024-01-26 广东省科学院资源利用与稀土开发研究所 一种防伪用钠镥镓锗石榴石基绿光荧光粉及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3429740A (en) * 1965-09-24 1969-02-25 North American Rockwell Growing garnet on non-garnet single crystal
US3788896A (en) * 1970-12-28 1974-01-29 North American Rockwell Method for producing bubble domains in magnetic film-substrate structures
US3736158A (en) * 1971-03-19 1973-05-29 G Cullen Czochralski-grown spinel for use as epitaxial silicon substrate
US3723599A (en) * 1971-08-18 1973-03-27 Bell Telephone Labor Inc Technique for growth of single crystal gallium garnet
DE2349348C2 (de) * 1972-10-07 1983-02-10 N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven Verfahren zum Züchten einer einkristallinen, wismutdotierten Yttrium- oder Seltenerdmetall-Eisen-Granatschicht
US3946372A (en) * 1974-04-15 1976-03-23 Rockwell International Corporation Characteristic temperature-derived hard bubble suppression
CA1061902A (en) 1974-04-15 1979-09-04 Paul J. Besser Orientation-derived hard bubble suppression

Also Published As

Publication number Publication date
FR2354809A1 (fr) 1978-01-13
US4323618A (en) 1982-04-06
DE2726744A1 (de) 1977-12-29
GB1580848A (en) 1980-12-03
DE2726744B2 (de) 1981-04-23
JPS5919912B2 (ja) 1984-05-09
DE2726744C3 (de) 1982-02-18
CH630963A5 (de) 1982-07-15
JPS531200A (en) 1978-01-07
NL7606482A (nl) 1977-12-20

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Legal Events

Date Code Title Description
ST Notification of lapse