JPS59195867A - サイリスタ - Google Patents

サイリスタ

Info

Publication number
JPS59195867A
JPS59195867A JP58069467A JP6946783A JPS59195867A JP S59195867 A JPS59195867 A JP S59195867A JP 58069467 A JP58069467 A JP 58069467A JP 6946783 A JP6946783 A JP 6946783A JP S59195867 A JPS59195867 A JP S59195867A
Authority
JP
Japan
Prior art keywords
layer
region
thyristor
gate
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58069467A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0586671B2 (OSRAM
Inventor
Toshihiko Aimi
相見　俊彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58069467A priority Critical patent/JPS59195867A/ja
Publication of JPS59195867A publication Critical patent/JPS59195867A/ja
Publication of JPH0586671B2 publication Critical patent/JPH0586671B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP58069467A 1983-04-20 1983-04-20 サイリスタ Granted JPS59195867A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58069467A JPS59195867A (ja) 1983-04-20 1983-04-20 サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58069467A JPS59195867A (ja) 1983-04-20 1983-04-20 サイリスタ

Publications (2)

Publication Number Publication Date
JPS59195867A true JPS59195867A (ja) 1984-11-07
JPH0586671B2 JPH0586671B2 (OSRAM) 1993-12-13

Family

ID=13403490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58069467A Granted JPS59195867A (ja) 1983-04-20 1983-04-20 サイリスタ

Country Status (1)

Country Link
JP (1) JPS59195867A (OSRAM)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5651868A (en) * 1979-10-05 1981-05-09 Nec Corp Semiconductor device
JPS5680165A (en) * 1979-12-04 1981-07-01 Mitsubishi Electric Corp Gate turn-off thyristor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5651868A (en) * 1979-10-05 1981-05-09 Nec Corp Semiconductor device
JPS5680165A (en) * 1979-12-04 1981-07-01 Mitsubishi Electric Corp Gate turn-off thyristor

Also Published As

Publication number Publication date
JPH0586671B2 (OSRAM) 1993-12-13

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