JPH0586671B2 - - Google Patents

Info

Publication number
JPH0586671B2
JPH0586671B2 JP58069467A JP6946783A JPH0586671B2 JP H0586671 B2 JPH0586671 B2 JP H0586671B2 JP 58069467 A JP58069467 A JP 58069467A JP 6946783 A JP6946783 A JP 6946783A JP H0586671 B2 JPH0586671 B2 JP H0586671B2
Authority
JP
Japan
Prior art keywords
region
layer
gate
current
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58069467A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59195867A (ja
Inventor
Toshihiko Aimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58069467A priority Critical patent/JPS59195867A/ja
Publication of JPS59195867A publication Critical patent/JPS59195867A/ja
Publication of JPH0586671B2 publication Critical patent/JPH0586671B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP58069467A 1983-04-20 1983-04-20 サイリスタ Granted JPS59195867A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58069467A JPS59195867A (ja) 1983-04-20 1983-04-20 サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58069467A JPS59195867A (ja) 1983-04-20 1983-04-20 サイリスタ

Publications (2)

Publication Number Publication Date
JPS59195867A JPS59195867A (ja) 1984-11-07
JPH0586671B2 true JPH0586671B2 (OSRAM) 1993-12-13

Family

ID=13403490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58069467A Granted JPS59195867A (ja) 1983-04-20 1983-04-20 サイリスタ

Country Status (1)

Country Link
JP (1) JPS59195867A (OSRAM)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5651868A (en) * 1979-10-05 1981-05-09 Nec Corp Semiconductor device
JPS5680165A (en) * 1979-12-04 1981-07-01 Mitsubishi Electric Corp Gate turn-off thyristor

Also Published As

Publication number Publication date
JPS59195867A (ja) 1984-11-07

Similar Documents

Publication Publication Date Title
US3202887A (en) Mesa-transistor with impurity concentration in the base decreasing toward collector junction
US5156981A (en) Method of making a semiconductor device of a high withstand voltage
CN111095569A (zh) 半导体装置及半导体装置的制造方法
JPS6046551B2 (ja) 半導体スイツチング素子およびその製法
US3532945A (en) Semiconductor devices having a low capacitance junction
US4089020A (en) High power semiconductor diode
US5223442A (en) Method of making a semiconductor device of a high withstand voltage
GB865471A (en) Improvements in or relating to processes for making transistors
KR100329672B1 (ko) 고전압수직트렌치반도체소자
JPH0586671B2 (OSRAM)
JPS6245709B2 (OSRAM)
JPS59124183A (ja) 発光半導体装置
US3582724A (en) Transistor having concave collector contact and method of making same
JPS621259B2 (OSRAM)
JPH0117267B2 (OSRAM)
US4081818A (en) Semiconductor temperature sensitive switching device with short carrier lifetime region
US3362856A (en) Silicon transistor device
GB2168848A (en) Semiconductor devices
JPS5961191A (ja) 半導体装置の製造方法
JPS649742B2 (OSRAM)
JP3211349B2 (ja) 半導体装置、およびその製造方法
JPS602785B2 (ja) 半導体制御整流装置の製造方法
JPH0126191B2 (OSRAM)
JPS621261B2 (OSRAM)
JPS5979578A (ja) 低電圧ツエナ−ダイオ−ドおよびその製造方法