JPS5919378A - 絶縁ゲート型トランジスタの製造方法 - Google Patents

絶縁ゲート型トランジスタの製造方法

Info

Publication number
JPS5919378A
JPS5919378A JP57129355A JP12935582A JPS5919378A JP S5919378 A JPS5919378 A JP S5919378A JP 57129355 A JP57129355 A JP 57129355A JP 12935582 A JP12935582 A JP 12935582A JP S5919378 A JPS5919378 A JP S5919378A
Authority
JP
Japan
Prior art keywords
layer
single crystal
crystal semiconductor
semiconductor layer
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57129355A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0512852B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kiyohiro Kawasaki
清弘 川崎
Sadakichi Hotta
定吉 堀田
Shigenobu Shirai
白井　繁信
Hiroki Saito
弘樹 斉藤
Seiichi Nagata
清一 永田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57129355A priority Critical patent/JPS5919378A/ja
Publication of JPS5919378A publication Critical patent/JPS5919378A/ja
Publication of JPH0512852B2 publication Critical patent/JPH0512852B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
JP57129355A 1982-07-23 1982-07-23 絶縁ゲート型トランジスタの製造方法 Granted JPS5919378A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57129355A JPS5919378A (ja) 1982-07-23 1982-07-23 絶縁ゲート型トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57129355A JPS5919378A (ja) 1982-07-23 1982-07-23 絶縁ゲート型トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS5919378A true JPS5919378A (ja) 1984-01-31
JPH0512852B2 JPH0512852B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-02-19

Family

ID=15007544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57129355A Granted JPS5919378A (ja) 1982-07-23 1982-07-23 絶縁ゲート型トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5919378A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01143360A (ja) * 1987-11-30 1989-06-05 Matsushita Electric Ind Co Ltd 絶縁ゲート型トランジスタの製造方法
US4885258A (en) * 1985-12-26 1989-12-05 Canon Kabushiki Kaisha Method for making a thin film transistor using a concentric inlet feeding system
JPH01303716A (ja) * 1988-05-31 1989-12-07 Agency Of Ind Science & Technol 薄膜形成方法
US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
US5366912A (en) * 1988-09-21 1994-11-22 Fuji Xerox Co., Ltd. Fabrication method of thin-film transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58112365A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 薄膜トランジスタの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58112365A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 薄膜トランジスタの製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
US4885258A (en) * 1985-12-26 1989-12-05 Canon Kabushiki Kaisha Method for making a thin film transistor using a concentric inlet feeding system
JPH01143360A (ja) * 1987-11-30 1989-06-05 Matsushita Electric Ind Co Ltd 絶縁ゲート型トランジスタの製造方法
JPH01303716A (ja) * 1988-05-31 1989-12-07 Agency Of Ind Science & Technol 薄膜形成方法
US5366912A (en) * 1988-09-21 1994-11-22 Fuji Xerox Co., Ltd. Fabrication method of thin-film transistor

Also Published As

Publication number Publication date
JPH0512852B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-02-19

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