JPS59191348A - 半導体集積回路 - Google Patents
半導体集積回路Info
- Publication number
- JPS59191348A JPS59191348A JP6656083A JP6656083A JPS59191348A JP S59191348 A JPS59191348 A JP S59191348A JP 6656083 A JP6656083 A JP 6656083A JP 6656083 A JP6656083 A JP 6656083A JP S59191348 A JPS59191348 A JP S59191348A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- island
- epitaxial layer
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000009792 diffusion process Methods 0.000 claims abstract description 22
- 230000003071 parasitic effect Effects 0.000 claims abstract description 14
- 238000002955 isolation Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000926 separation method Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004460 silage Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6656083A JPS59191348A (ja) | 1983-04-14 | 1983-04-14 | 半導体集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6656083A JPS59191348A (ja) | 1983-04-14 | 1983-04-14 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59191348A true JPS59191348A (ja) | 1984-10-30 |
JPH0337739B2 JPH0337739B2 (enrdf_load_stackoverflow) | 1991-06-06 |
Family
ID=13319436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6656083A Granted JPS59191348A (ja) | 1983-04-14 | 1983-04-14 | 半導体集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59191348A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01146352A (ja) * | 1987-10-30 | 1989-06-08 | Sgs Thomson Microelettronica Spa | 能動及び受動素子を絶縁ポケット内に含み、各素子とそれを含むポケットの間での破壊電圧よりも高い電圧において動作する集積構造 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57100743A (en) * | 1980-12-16 | 1982-06-23 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device |
-
1983
- 1983-04-14 JP JP6656083A patent/JPS59191348A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57100743A (en) * | 1980-12-16 | 1982-06-23 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01146352A (ja) * | 1987-10-30 | 1989-06-08 | Sgs Thomson Microelettronica Spa | 能動及び受動素子を絶縁ポケット内に含み、各素子とそれを含むポケットの間での破壊電圧よりも高い電圧において動作する集積構造 |
Also Published As
Publication number | Publication date |
---|---|
JPH0337739B2 (enrdf_load_stackoverflow) | 1991-06-06 |
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