JPS59191332A - X-ray mask - Google Patents

X-ray mask

Info

Publication number
JPS59191332A
JPS59191332A JP58065952A JP6595283A JPS59191332A JP S59191332 A JPS59191332 A JP S59191332A JP 58065952 A JP58065952 A JP 58065952A JP 6595283 A JP6595283 A JP 6595283A JP S59191332 A JPS59191332 A JP S59191332A
Authority
JP
Japan
Prior art keywords
film
pattern
ray
deformation
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58065952A
Other languages
Japanese (ja)
Other versions
JPH0425692B2 (en
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP58065952A priority Critical patent/JPS59191332A/en
Publication of JPS59191332A publication Critical patent/JPS59191332A/en
Publication of JPH0425692B2 publication Critical patent/JPH0425692B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To prevent the deformation of a mask by a method wherein a film for prevention of deformation is formed together with a pattern-like metal film having an X-ray shielding faculty on the surface of a membrane. CONSTITUTION:A membrane 12 consisting of polyimide film and the like is adhered to the surface of a frame 11 of silicon and the like, and a pattern-like film 13 having an X-ray shielding faculty and a pattern-like film 14 to be used for prevention of pattern deformation are formed on the surface of the membrane 12. The pattern-like film 14 may be formed using a film of gold and the like in the same manner as the pattern-like film 13 having X-ray shielding faculty, or it may be formed using other materials. By the formation of the pattern-like film for prevention of deformation of pattern on the X-ray mask, the deformation of pattern of the X-ray mask can be prevented.

Description

【発明の詳細な説明】 本発明はＸ線露光用マスクの構造に関する。[Detailed description of the invention] The present invention relates to the structure of an X-ray exposure mask.

従来、Ｘ線露光用マスクは、第１図に平面図及び断面図
を示すごとく、シリコン等のフレーム１の表面にポリイ
ミド膜等からなるメンプラン膜２が貼り付けられ、該メ
ンプラン膜２の表面に金等からなるＸ線阻止能を有する
図形状膜３等がＸ線転写図形の要部のみに形成されて成
るのが通例であった。Conventionally, in an X-ray exposure mask, as shown in a plan view and a cross-sectional view in FIG. It has been customary to have a graphic film 3 made of gold or the like on the surface and having an X-ray blocking ability formed only on the main part of the X-ray transferred figure.

しかし、上記従来技術によるＸ線露光用マスクでは、メ
ンプラン膜が図形状膜の図形に依存して変形し、ひいて
は図形変形を引き起こすという欠点があった。However, the conventional X-ray exposure mask described above has a drawback in that the Menplan film deforms depending on the shape of the patterned film, resulting in shape deformation.

本発明は、かかる従来技術の欠点をなくシ、図形変形の
ないＸ線露光用マスクを提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to eliminate the drawbacks of the prior art and provide an X-ray exposure mask that does not cause shape deformation.

上記目的を達成するための本発明の基本的な構成は、フ
レームにメンプラン膜を貼付け、該メンプラン膜表面に
Ｘ線阻止能を有する図形状金属膜を形成するＸ線露光用
マスクに於て、転写図形及び目合せマーク以外に、図形
変形防止のため捨て打ち図形状膜を形成することを特徴
とする。The basic structure of the present invention to achieve the above object is that an X-ray exposure mask is provided in which a Memplan film is attached to a frame and a graphic metal film having an X-ray blocking ability is formed on the surface of the Memplan film. The present invention is characterized in that, in addition to the transferred figures and alignment marks, a discarded figure-shaped film is formed to prevent figure deformation.

以下、実施例により本発明を詳述する。Hereinafter, the present invention will be explained in detail with reference to Examples.

第２図は本発明によるＸ線露光用マスクの一実施例を示
すＸ線マスクの平面図を断面図である。FIG. 2 is a cross-sectional plan view of an X-ray mask showing an embodiment of the X-ray exposure mask according to the present invention.

フレーム１１にはメンプラン膜１２が貼付けられ、メン
プラン膜１２表面にはＸ線阻止能を有する図形状膜１３
と、図形変形防止用の図形状膜１４そ形成する。この場
合、図形状膜１４はＸ線阻止能を有する図形状膜１３と
同様の金等の膜を用い、又図形１４の巾や密度は内部図
形１３と同様にすることにしたが、膜１６と膜１４とは
同一材料である必要は必ずしもなく、又図形１４の巾や
密度は内部図形１３と必ずしも同様である必要は無い。A Memplan membrane 12 is attached to the frame 11, and a graphic membrane 13 having X-ray blocking ability is attached to the surface of the Memplan membrane 12.
Then, a graphic film 14 for preventing graphic deformation is formed. In this case, the pattern film 14 is made of gold or the like similar to the pattern film 13 having an X-ray blocking ability, and the width and density of the pattern 14 are the same as those of the internal pattern 13. It is not necessarily necessary that the film 14 and the film 14 be made of the same material, and the width and density of the figure 14 do not necessarily have to be the same as the internal figure 13.

上記の如く、Ｘ線マスクに図形変形防止用の図形状膜を
形成することにより、Ｘｉマスクの図形変形を防止でき
る効果がある。As described above, by forming a graphic film for preventing graphic deformation on the X-ray mask, it is possible to prevent graphic deformation of the Xi mask.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（α）（ｂ）は従来技術によるｘｉマスクの平面
図と断面図を示し、第２図（α）（ｂ）は本発明による
Ｘ線マスクの一実施例を示すＸ線マスクの平面図と断面
図である。 １．１１・・・・・・フレーム ２．１２・・・・・・メンプラン膜 ６．１３・・・・・・図形状Ｘ線阻止能膜１４・・・・
・・図形状変°形防止膜 以　　上FIG. 1(α)(b) shows a plan view and a sectional view of a xi mask according to the prior art, and FIG. 2(α)(b) shows an X-ray mask according to an embodiment of the present invention. They are a plan view and a sectional view. 1.11... Frame 2.12... Menplan membrane 6.13... Figure-shaped X-ray stopping ability membrane 14...
・More than a figure deformation prevention film

Claims (1)

【特許請求の範囲】[Claims] フレームにメンプラン膜を貼付け、該メンプラン膜表面
にＸ線阻止能を有する図形状金属膜を形成するＸ線露光
用マスクに於て、転写図形及び目合せマーク以外に、図
形変形防止のための捨て打ち図形状膜を形成することを
特徴とするＸ線マスク。In an X-ray exposure mask in which a Menplan film is pasted on a frame and a graphic metal film with X-ray blocking ability is formed on the surface of the Menplan film, in addition to the transferred graphics and alignment marks, there is a An X-ray mask characterized by forming a film in the shape of a random pattern.
JP58065952A 1983-04-14 1983-04-14 X-ray mask Granted JPS59191332A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58065952A JPS59191332A (en) 1983-04-14 1983-04-14 X-ray mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58065952A JPS59191332A (en) 1983-04-14 1983-04-14 X-ray mask

Publications (2)

Publication Number Publication Date
JPS59191332A true JPS59191332A (en) 1984-10-30
JPH0425692B2 JPH0425692B2 (en) 1992-05-01

Family

ID=13301825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58065952A Granted JPS59191332A (en) 1983-04-14 1983-04-14 X-ray mask

Country Status (1)

Country Link
JP (1) JPS59191332A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63110634A (en) * 1986-10-28 1988-05-16 Fujitsu Ltd Mask for x-ray stepper
JPS63202022A (en) * 1987-02-06 1988-08-22 ドクトル・ヨハネス・ハイデンハイン・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング Exposure mask for forming pattern by lithography

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63110634A (en) * 1986-10-28 1988-05-16 Fujitsu Ltd Mask for x-ray stepper
JPS63202022A (en) * 1987-02-06 1988-08-22 ドクトル・ヨハネス・ハイデンハイン・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング Exposure mask for forming pattern by lithography
JPH0351287B2 (en) * 1987-02-06 1991-08-06 Dokutoru Yohanesu Haidenhain Gmbh

Also Published As

Publication number Publication date
JPH0425692B2 (en) 1992-05-01

Similar Documents

Publication Publication Date Title
JPH0746681B2 (en) Method of manufacturing mask for X-ray stepper
CA2013245A1 (en) X-ray lithography mask and devices made therewith
JPS59191332A (en) X-ray mask
JPS5243370A (en) Method of forming depression in semiconductor substrate
JPS59192248A (en) Reticle
JPS52117557A (en) Soft x-ray exposure mask and its manufacturing method
JPH04180661A (en) Lead frame and manufacture thereof
JPS6076121A (en) Manufacture of semiconductor device
JPS6453559A (en) Manufacture of semiconductor device
JPH064348Y2 (en) Original photo mask
JPH04186658A (en) Manufacture of semiconductor device
JPS6018920A (en) X_ray mask
JPH03237458A (en) Fine pattern forming method
JPS5317075A (en) Production of silicon mask for x-ray exposure
JPS5444872A (en) Manufacture of semiconductor device
JPS6163834U (en)
JPH02125606A (en) Mask for x-ray exposure
JPS5929420A (en) Manufacture of x-ray mask
JPS53139982A (en) Exposure apparatus of semiconductor substrates
JPS5856333A (en) Formation of key pattern for mask alignment
JPS5228873A (en) Method for production of the cubic structure consisting of the semicon ductive crystal and the semiconductive device made of it's cubic struc ture
JPS5588331A (en) X-ray exposing mask
JPS5942973B2 (en) How to make a mask
KR20030048207A (en) Method for preventing pollution in back side grinding of wafer
JPS5830756A (en) Mask aligner