JPH02125606A - Mask for x-ray exposure - Google Patents
Mask for x-ray exposureInfo
- Publication number
- JPH02125606A JPH02125606A JP63279725A JP27972588A JPH02125606A JP H02125606 A JPH02125606 A JP H02125606A JP 63279725 A JP63279725 A JP 63279725A JP 27972588 A JP27972588 A JP 27972588A JP H02125606 A JPH02125606 A JP H02125606A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- mask
- pattern
- substrate
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000010521 absorption reaction Methods 0.000 claims abstract description 12
- 239000004642 Polyimide Substances 0.000 abstract description 5
- 229920001721 polyimide Polymers 0.000 abstract description 5
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造工程において用いられるＸ線
露光用マスクに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an X-ray exposure mask used in the manufacturing process of semiconductor devices.
従来、この種のＸ線露光用マスクとしては、第２図に示
すように、マスク基板２１にはＸ線の吸収係数の小さな
ポリイミド等の有機物か、Ｓｉまたはその酸化物や窒化
物が用いられ、パターンを形成する遮Ｘ線膜２２として
はＸ線吸収係数の大きいＡｕ等の重金属が用いられてい
た。Conventionally, in this type of X-ray exposure mask, as shown in FIG. 2, the mask substrate 21 is made of an organic material such as polyimide, which has a small X-ray absorption coefficient, or Si or its oxide or nitride. As the X-ray shielding film 22 forming the pattern, a heavy metal such as Au, which has a large X-ray absorption coefficient, has been used.
上述した従来のＸｌｌ１露光用マスクは、パターンを形
成する遮Ｘ線膜が１種類の材料がら形成されているため
、１枚のマスクで１種類のパターンしかウェーハに転写
できないという欠点がある。The above-described conventional Xll1 exposure mask has a drawback in that only one type of pattern can be transferred onto a wafer with one mask because the X-ray shielding film that forms the pattern is formed of one type of material.
本発明のＸ線露光用マスクは、Ｘ線を透過する基板と、
該基板上に設けられたＸ線吸収係数の異なる２種類の遮
Ｘ線膜からなるパターンとを含んで構成される。The X-ray exposure mask of the present invention includes a substrate that transmits X-rays;
The pattern includes two types of X-ray shielding films having different X-ray absorption coefficients provided on the substrate.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の断面図である。第１図にお
いてＸ線の吸収係数が小さくてＸ線を透過するポリイミ
ド等からなるマスク基板１１上には、Ａｕでできた第１
の遮Ｘ線膜１２とＳｉでできた第２の遮Ｘ線膜１３がら
パターンが形成されている。なお、１４はＳｉ等からな
る保持枠である。FIG. 1 is a sectional view of an embodiment of the present invention. In FIG. 1, on a mask substrate 11 made of polyimide or the like which has a small X-ray absorption coefficient and transmits X-rays, there is a first mask made of Au.
A pattern is formed from the X-ray shielding film 12 and the second X-ray shielding film 13 made of Si. Note that 14 is a holding frame made of Si or the like.
Ａｕ、ＳｉのＸ線吸収係数の波長依存性は第３図に示す
とおりである。なお第３図は、鳳紘一部著「半導体リソ
グラフィ技術」産業図書（昭和５９年）１８２頁、図６
．４５より引用したものである。The wavelength dependence of the X-ray absorption coefficient of Au and Si is as shown in FIG. Figure 3 is from ``Semiconductor Lithography Technology'' written by Hiroshi Otori, p. 182, Figure 6.
．． This is quoted from 45.
次に本実施例を用いたＸ線露光について説明する。Next, X-ray exposure using this embodiment will be explained.
第１図に示したＸ線露光用マスクを６ｎｍの波長のＸ線
で露光する。この時、第３図に示したように、ＡｕとＳ
ｉのＸ線吸収係数は２０であり、ポリイミドは１である
ため、マスク基板１１上の第１及び第２の遮Ｘ線膜１２
．１３からなるパターンはウェーハ上に転写される０次
に同じＸ線露光用マスクを用い０．８ｎｍの波長のＸ線
で露光すると、Ａｕ、Ｓｔ及びポリイミドのＸ線吸収係
数はそれぞれ４，０．１３及び０．０９であるため、Ａ
ｕからなる第１の遮Ｘ線膜１２によるパターンのみがウ
ェーハに転写される。The X-ray exposure mask shown in FIG. 1 is exposed to X-rays having a wavelength of 6 nm. At this time, as shown in Figure 3, Au and S
Since the X-ray absorption coefficient of i is 20 and that of polyimide is 1, the first and second X-ray shielding films 12 on the mask substrate 11
．． When the pattern consisting of 13 is exposed to X-rays with a wavelength of 0.8 nm using the same zero-order X-ray exposure mask that is transferred onto the wafer, the X-ray absorption coefficients of Au, St, and polyimide are 4 and 0, respectively. 13 and 0.09, so A
Only the pattern formed by the first X-ray shielding film 12 made of u is transferred to the wafer.
このように本実施例によれば、１枚のＸ線露光用マスク
で異なるパターンをウェーハに転写できる。As described above, according to this embodiment, different patterns can be transferred onto the wafer using one X-ray exposure mask.
〔発明の効果〕
以上説明したように本発明は、Ｘ！！露光用マスクをＸ
線を透過する基板と、この上に設けられたＸ線吸収係数
の異なる２種類の遮Ｘ線膜からなるパターンとにより、
構成することにより、１枚のマスクで２種類のパターン
をウェーハに転写できるという効果がある。[Effects of the Invention] As explained above, the present invention provides X! ! X the exposure mask
By using a substrate that transmits radiation and a pattern made of two types of X-ray shielding films with different X-ray absorption coefficients provided on the substrate,
This configuration has the effect that two types of patterns can be transferred onto a wafer with one mask.
第１図は本発明の一実施例の断面図、第２図は従来のＸ
線露光用マスクの一例の断面図、第３図はマスクおよび
レジスト材料のＸ線吸収特性を示す図である。
１１．２１・・・マスク基板、１２・・・第１の遮Ｘ線
膜、１３・・・第２の遮Ｘ線膜、１４・・・保持枠、２
２・・・遮Ｘ線膜。
７２丙１の底Ｘ球膿
夏
図
図
】ρ： 長 （九力１ン
了又２あ・Ｊひ°レジ”ストキ軒丙〆太ｒ＋叱ζ牛耐ｌ
ｌ５Ｌ戸
図Fig. 1 is a sectional view of an embodiment of the present invention, and Fig. 2 is a sectional view of a conventional X
FIG. 3 is a cross-sectional view of an example of a mask for line exposure, and is a diagram showing the X-ray absorption characteristics of the mask and resist material. 11.21... Mask substrate, 12... First X-ray blocking film, 13... Second X-ray blocking film, 14... Holding frame, 2
2...X-ray shielding film. 72 丙 1 bottom
l5L door map
Claims (1)
係数の異なる２種類の遮Ｘ線膜からなるパターンとを含
むことを特徴とするＸ線露光用マスク。1. An X-ray exposure mask comprising: a substrate that transmits X-rays; and a pattern formed on the substrate and consisting of two types of X-ray shielding films having different X-ray absorption coefficients.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63279725A JPH02125606A (en) | 1988-11-04 | 1988-11-04 | Mask for x-ray exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63279725A JPH02125606A (en) | 1988-11-04 | 1988-11-04 | Mask for x-ray exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02125606A true JPH02125606A (en) | 1990-05-14 |
Family
ID=17615012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63279725A Pending JPH02125606A (en) | 1988-11-04 | 1988-11-04 | Mask for x-ray exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02125606A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0564720A1 (en) * | 1992-04-07 | 1993-10-13 | Tokyo Institute Of Technology | Method of manufacturing x-ray exposure mask |
-
1988
- 1988-11-04 JP JP63279725A patent/JPH02125606A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0564720A1 (en) * | 1992-04-07 | 1993-10-13 | Tokyo Institute Of Technology | Method of manufacturing x-ray exposure mask |
| US5436096A (en) * | 1992-04-07 | 1995-07-25 | Tokyo Institute Of Technology | Method of manufacturing X-ray exposure mask |
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