JPS59189623A - 半導体への不純物拡散法 - Google Patents

半導体への不純物拡散法

Info

Publication number
JPS59189623A
JPS59189623A JP6408583A JP6408583A JPS59189623A JP S59189623 A JPS59189623 A JP S59189623A JP 6408583 A JP6408583 A JP 6408583A JP 6408583 A JP6408583 A JP 6408583A JP S59189623 A JPS59189623 A JP S59189623A
Authority
JP
Japan
Prior art keywords
semiconductor
film
polycrystalline
alloy layer
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6408583A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0159731B2 (enrdf_load_stackoverflow
Inventor
Hidekazu Okabayashi
岡林　秀和
Eiji Nagasawa
長澤　英二
Mitsutaka Morimoto
光孝 森本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6408583A priority Critical patent/JPS59189623A/ja
Priority to US06/550,913 priority patent/US4558507A/en
Priority to DE8383111366T priority patent/DE3381880D1/de
Priority to EP83111366A priority patent/EP0109082B1/en
Publication of JPS59189623A publication Critical patent/JPS59189623A/ja
Publication of JPH0159731B2 publication Critical patent/JPH0159731B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP6408583A 1982-11-12 1983-04-12 半導体への不純物拡散法 Granted JPS59189623A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP6408583A JPS59189623A (ja) 1983-04-12 1983-04-12 半導体への不純物拡散法
US06/550,913 US4558507A (en) 1982-11-12 1983-11-10 Method of manufacturing semiconductor device
DE8383111366T DE3381880D1 (de) 1982-11-12 1983-11-14 Verfahren zur herstellung einer halbleiteranordnung mit einem diffusionsschritt.
EP83111366A EP0109082B1 (en) 1982-11-12 1983-11-14 Method of manufacturing a semiconductor device comprising a diffusion step

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6408583A JPS59189623A (ja) 1983-04-12 1983-04-12 半導体への不純物拡散法

Publications (2)

Publication Number Publication Date
JPS59189623A true JPS59189623A (ja) 1984-10-27
JPH0159731B2 JPH0159731B2 (enrdf_load_stackoverflow) 1989-12-19

Family

ID=13247885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6408583A Granted JPS59189623A (ja) 1982-11-12 1983-04-12 半導体への不純物拡散法

Country Status (1)

Country Link
JP (1) JPS59189623A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181125A (ja) * 1985-02-06 1986-08-13 Nec Corp 半導体装置のオ−ミツク電極及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026474A (enrdf_load_stackoverflow) * 1973-07-07 1975-03-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026474A (enrdf_load_stackoverflow) * 1973-07-07 1975-03-19

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181125A (ja) * 1985-02-06 1986-08-13 Nec Corp 半導体装置のオ−ミツク電極及びその製造方法

Also Published As

Publication number Publication date
JPH0159731B2 (enrdf_load_stackoverflow) 1989-12-19

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