JPS59182294A - Equipment for chemical vapor phase growth - Google Patents

Abstract

PURPOSE:The reaction furnace in the chemical vapor growth equipment is divided lengthwise so that the furnace is made openable and the reactor tube is set to the furnace, while it is opened, thus enabling the reactor tube to be taken out of the furnace easily with no need of pulling it out to the clean bench side. CONSTITUTION:In the chemical vapor growth equipment, the CVD furnace 11 is divided lengthwise into the stationary half 11a and the movable half 11b and both halves are connected with the hinge 20 so that they are swingable around the shaft 19 and the furnace 11 can be opened lengthwise. Individual halves 11a, 11b are equipped with reed-screen-like heaters 18 running along the quartz reacter 12 and the heaters are connected through the terminals to the power source 18b. Thus, the quartz tube 12 can be taken out of the furnace 11, when it is opened, in the arrow direction and it becomes unncessary to take out the reactor on the clean bench side.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a chemical vapor deposition furnace, and more particularly, to a structure of a multi-stage furnace used for chemical vapor deposition, which can be divided into two parts and opened and closed each time.

(2) Background of the technology Chemical vapor deposition (C-
A multi-stage chemical vapor deposition furnace (hereinafter referred to as a CVD furnace), which is shown in front view in FIG. 1, is used. In the figure, 1 is a CVD furnace, 2 is a quartz tube (also called a reaction tube) placed horizontally in the furnace, and a predetermined number of wafers 3 are placed inside the quartz tube 4. Ru. The quartz tube 2 is closed at both ends by a manifold 5.6, and through the manifold 5, a reaction gas and a carrier gas for thin 11W growth are supplied through a pipe 7.8, and through the manifold 6, a JNOI gas is supplied by an exhaust system 9. Ru. A coil is placed around the stone rr't2 as a heater 10. The wafer 3 is placed and removed on a clean bench adjacent to the manifold 5 on the clean bench side 1 and arranged on the clean bench side 11.
The clean bench side 11 is kept dust-free. The illustrated apparatus is provided with two CVD furnaces, and the upper furnace in the figure has the same configuration as the lower furnace. CVI] In addition to the one shown in the figure, there are three-stage and four-stage furnaces62. There is a tendency for the disaster to occur in multiple stages.

(3) Prior art and problems When the CVI furnace described above is used for a long time, reaction products adhere to the inside of the quartz tube. To remove these products,
Conventionally, quartz 112 was pulled out on a clean bench.
I was cleaning. As a result, 1; (The clean bench side lO which is in a state of dust is contaminated, and it is ii!, bifu!! (
There was a problem in that time was wasted in returning to the dust state.

(4) Purpose of @Ming The present invention has been developed to address the above-mentioned conventional problems, and in a multi-stage CVD furnace for carrying out the CVD method for thin film growth, etc., the quartz tube located inside the CVD furnace is Clean bench in the direction (take it out without pulling it out according to the rules)
It is an object of the present invention to provide a CVD furnace capable of removing this.

(5) Structure and object of the invention According to the present invention, six reactor furnaces are vertically divided and can be opened and closed, and when the reactor is opened, the core tube of the reactor can be opened and closed. This can be achieved by providing a chemical vapor deposition apparatus (4JL) characterized in that it can be attached and detached.

(6) Examples of the invention Hereinafter, embodiments of the present invention will be explained in detail with reference to the drawings.

The embodiment of the present invention is shown in a front view in FIG. show. In the quartz tube 12, a susceptor with a wafer placed thereon is arranged as shown in FIG.
Not shown.

CVI) Furnace 11 (not shown), 2 (not shown) along the dividing line
The structure is divided into equal parts and can be opened and closed. FIG. 3 (al is CVI in FIG. 1) is a cross-sectional view of the furnace 1. The CVO furnace 1 has a cylindrical shape, and a cylindrical quartz tube 2 is disposed inside it. Indicates that it cannot be taken out in either the left or right direction.

FIG. 3tb) is a cross-sectional view of the CVD furnace 1 shown in FIG. 2 when the outside of the furnace 1 is divided into two equal parts. In order to make it possible to open the CVD furnace 1 outside the furnace 1, the heating heater] 8 is arranged as a coil 9 surrounding the quartz layer 2, in contrast to the heater in FIG. Quartz tube 1 in the shape of a blind
2. This condition is partially illustrated for the upper blade quartz tube in FIG.
The heater 18 (not shown in the figure) extends in the vertical direction of the plane 15. One end of the heater 18 extends above the CVO tube 11 and is connected to the power source 18b via the power source 18a. The terminal 18a is attached to an immovable fixed half 11a of the CvD furnace 11, and a cooling water pipe (not shown) is also attached to the fixed half 11a.

CVI) or 11 is divided into two parts with good reproducibility by opening and closing the movable half part ITo by a hinge 20 that is rotatable around an axis 19.

Figure 13 outside the CVD furnace 1 (when opened as shown in BL, the quartz tube 12 is on the side); It is no longer necessary to pull out the quartz tube I2.
There is no need for the clean bench side 16 to be stained for cleaning.

In the illustrated example, the CVI3 furnace 11 has two lower stages, and in some cases, three or four stages. , toi・) are arranged in multiple tiers above and below. So, as shown in Figure 3 (bl)
When opening the CVO furnace 11, it is required that the bottom half of the furnace 11b does not come into contact with the CVD furnace below. On the other hand, in the multistage arrangement of a CVD furnace, it is required that each stage be arranged as close as possible from the standpoint of space, workability, and the like. Therefore, in the arrangement of CVD furnaces according to the present invention, a problem arises as to how much distance should be set between CVD furnaces of a predetermined straight line in the case of a multi-stage arrangement.

FIG. 4 shows a three-pronged CVD furnace in cross-section.

The movable half part 11b of the central CVO furnace 11 is shown in Figure 3 tbl.
Assuming that it is opened in the same way as in the case of Let the middle point be C, and observe -ζ about the triangle formed by these points A, B, and C.

First, if the outside 11 of the CVD furnace 1 is a, and the distance between the point and C is b, then in order for the movable half 11a to open without touching the nigga or the lower CVD furnace 11 at all,
b > 2a , , , (must be +1. This is the first tea/1.

If the angle between the line connecting A and C and the line connecting Δ and B is θ, then if the central Cν1] furnace 11 is divided into two equal parts, the movable half part 11b will be In order to avoid contact with the furnace 11, θ is required to take a certain value.

If θ-0, the first condition of ζ(1), which is b=2a, is not satisfied, so θ>0 must be satisfied.

Regarding the triangle ABC when the movable hand part 11b contacts the CVO furnace 11 of the upper blade, ζ is 9a2=b2+a2-2ab cos (180-θ
), , (21 is established, and from (2), the relationship cos θ - d - ra zo + lz is established. Therefore, in order for the movable hand portion 11b to not touch the upper Cv1] furnace 11. o5θ-80-
“−b′ and 2αb must be +J, so −18α゛−62 θ= cos −> 0 , , , +31
The cLh relationship must be maintained.

Thus, the movable hand portion 11b can control the CV of the upper and lower blades.
In order to be able to open and close the D furnace without touching it, from (1) and (3), 0 < 0 < CO3-i 8cL"-1,'
,,, (4゜20,b relationship must hold. Therefore, °ζ,゛In the split furnace according to the present invention, CVI) The radius of the furnace is a, and the center point of two adjacent CVI1 furnaces is When the distance between the two is b, and the angle formed by the vertical line passing through the center point of the CVD furnace 11 and the line connecting the center point and the hinge axis 19 is θ, the relationship in equation (4) above is expressed as a, b, θ
Set.

(7) As explained in detail above, the bisecting side step CVD of the present invention
In the furnace, a quartz tube placed inside it
I) It is possible to take out the furnace in the horizontal direction rather than in the horizontal direction, so
Not only is it easier to take out the quartz tube, but the quartz material is not exposed to the clean hench side like in the past, so it is easier to remove the quartz tube from the clean hench side. ``I dyeing is prevented and the time required for chemical vapor formation is saved.

Furthermore, the axis of the hinge that divides the CVD furnace into two halves is determined by the radius of the CVD furnace and the distance between the two CVD furnaces that match I'/i. By setting the movable hand part to the position above, the movable hand part can be opened and closed without touching the nigga or the CVD furnace below, so the movable hand part can be opened and closed without any support, and the CVD furnace
Damage to the D furnace is avoided.

[Brief explanation of the drawing]

Fig. 1 is a front view of a conventional multi-stage CVD furnace, Fig. 2 is a front view of an embodiment of the present invention, Fig. 3 (δ) is a cross-sectional view of one of the [7-1] furnaces in Fig. 1; Figure 3 fbl is one of the lines in Figure 2 (:
VI) A sectional view showing the state when the furnace is divided into two equal parts and opened. FIG. 4 is a sectional view showing the arrangement of this embodiment. 1l-CVD furnace, lla-fixed hand part, 11b-movable hand part, 12-quartz tube, 13, 14-mani bolt, 15-clean hench side, 1
6-Exhaust system, I7-Partition line, 1) Heater, 18a-
Power supply terminal, 18b - power supply, 19 - axis, 20 - hinge special arrangement' [Applicant Fujitsu Ltd. Figure 1 Figure 2 Figure 3 (a) Figure 4 1b

Claims (1)

[Claims] 1. A chemical vapor deposition apparatus characterized in that a reactor is configured to be vertically divided and can be opened and closed, and the reactor is opened to allow attachment and detachment of reaction tubes to and from the inside of the reactor.