JPH04162712A - Low pressure cvd apparatus - Google Patents
Low pressure cvd apparatusInfo
- Publication number
- JPH04162712A JPH04162712A JP28900690A JP28900690A JPH04162712A JP H04162712 A JPH04162712 A JP H04162712A JP 28900690 A JP28900690 A JP 28900690A JP 28900690 A JP28900690 A JP 28900690A JP H04162712 A JPH04162712 A JP H04162712A
- Authority
- JP
- Japan
- Prior art keywords
- core tube
- furnace core
- boat
- end cap
- pressure cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004518 low pressure chemical vapour deposition Methods 0.000 title claims description 5
- 235000012431 wafers Nutrition 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract 1
- 238000004299 exfoliation Methods 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造に使用される減圧ＣＶＤ装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a low pressure CVD apparatus used for manufacturing semiconductor devices.
従来、この種の減圧ＣＶＤ装置は、下方が開放された炉
芯管内にエンドキャップによりウェハーが保持されたボ
ートを搬入し、内部を排気したのち炉芯管を加熱しなが
ら反応ガスを導入してウェハー上に膜を形成するように
構成されていた。そして、炉芯管内で高温状態での成膜
が終了すると、炉芯管下部か開放され、ウェハーはボー
トに設置された状態でエンドキャップにより室温状態で
ある炉芯管下方へ搬送されるため、ウェハー及びボート
は急冷されていた。Conventionally, in this type of low-pressure CVD equipment, a boat with wafers held by an end cap is introduced into a furnace core tube that is open at the bottom, and after the interior is evacuated, a reaction gas is introduced while heating the furnace core tube. It was configured to form a film on a wafer. When the film formation in the high temperature state in the furnace core tube is completed, the lower part of the furnace core tube is opened, and the wafer is transported to the lower part of the furnace core tube at room temperature by the end cap while being installed in the boat. The wafers and boat were rapidly cooled.
上述した従来の減圧ＣＶＤ装置は、高温での成膜が終了
すると、ウェハーはボートに設置された状態で、室温状
態である炉芯管下方へ搬送されるというシステムになっ
ているので、ウェハー及びボートは高温状態から室温状
態へ急激な温度差の下で搬送されることから、ボートと
ボート表面に付着した膜との熱膨張係数の違いにより、
ボート表面に付着した膜ははがれ易くパーティクルの発
生源になり、ウェハー表面に付着するため、歩留りが低
下するという欠点がある。The conventional low-pressure CVD apparatus described above has a system in which, after high-temperature film formation is completed, the wafer is placed in a boat and transported to the lower part of the furnace core tube, which is at room temperature. Because boats are transported under rapid temperature differences from high temperature to room temperature, the difference in thermal expansion coefficient between the boat and the film attached to the boat surface causes
The film attached to the boat surface easily peels off, becomes a source of particles, and adheres to the wafer surface, resulting in a reduction in yield.
本発明の減圧ＣＶＤ装置は、下方が開放された炉芯管と
ウェハーか載せられたボートを保持し前記炉芯管内に搬
入すると共に炉芯管を密封するエンドキャップとを備え
た減圧ＣＶＤ装置において、エンドキャップにより搬出
されたボートを加熱するための加熱手段を前記炉芯管の
下部に設けたものである。The reduced pressure CVD apparatus of the present invention is a reduced pressure CVD apparatus equipped with a furnace core tube whose bottom is open and an end cap that holds a boat on which wafers are placed and carries it into the furnace core tube and seals the furnace core tube. , heating means for heating the boat carried out by the end cap is provided at the lower part of the furnace core tube.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例の断面図、第２図（ａ）、（
ｂ）は実施例におけるエンドキャップを炉芯管の下方に
おろした場合の断面図及びＡ−Ａ′線線断断面図ある。FIG. 1 is a sectional view of an embodiment of the present invention, FIG. 2(a), (
b) is a cross-sectional view and a cross-sectional view taken along the line A-A' in the embodiment when the end cap is lowered below the furnace core tube.
第１図において減圧ＣＶＤ装置は、フランジ７に保持さ
れ下方が開放されたアウター管１とインナー管２とから
なる炉芯管１０と、この炉芯管１０を加熱する加熱ヒー
タ６と、ウェハー５が載せられたボート４を保持しこの
炉芯管１０内に搬入すると共に炉芯管１０を密封するエ
ンドキャップ３と、炉芯管１０の下部に設けられエンド
キャップ３により搬出されたボート４を加熱し保温する
ための保温用ヒーター９とから主に構成されている。In FIG. 1, the reduced pressure CVD apparatus includes a furnace core tube 10 consisting of an outer tube 1 and an inner tube 2 held by a flange 7 and open at the bottom, a heater 6 for heating the furnace core tube 10, and a wafer 5. An end cap 3 is provided at the bottom of the furnace core tube 10 to hold the boat 4 on which it is carried and carry it into the furnace core tube 10 and to seal the furnace core tube 10. It mainly consists of a heat-retaining heater 9 for heating and keeping warm.
尚、第１図における８は、フランジ７に組込まれたガス
導入管であり、１１は真空ポンプ等に接続する排気管で
ある。Note that 8 in FIG. 1 is a gas introduction pipe built into the flange 7, and 11 is an exhaust pipe connected to a vacuum pump or the like.
このように構成された実施例によりウェハー５表面に膜
形成を行ったのちは、第２図（ａ）。After forming a film on the surface of the wafer 5 according to the embodiment configured as described above, the image shown in FIG. 2(a) is shown.
（ｂ）に示すように、ウェハー５はボート４に載せられ
たままエンドキャップ３により炉芯管１０の下方に搬出
されるが、炉芯管１０の下方には半円形の保温用ヒータ
ー９が設けられているため、ウェハー５及びホード４は
急冷されることはなくなる。従って、ボート４表面に付
着した膜のはがれは抑制される。As shown in (b), the wafers 5 are transported to the lower part of the furnace core tube 10 by the end cap 3 while being placed on the boat 4. Below the furnace core tube 10, there is a semicircular heat-retaining heater 9. Because of this provision, the wafer 5 and hoard 4 will not be rapidly cooled. Therefore, peeling of the film attached to the surface of the boat 4 is suppressed.
尚、上記実施例においては炉芯管１０の下方に設ける加
熱手段として半円形のヒーターを用いた場合について説
明したが、これに限定されるものではなく、赤外線ラン
プ等の加熱手段を用いてもよいことは勿論である。In the above embodiment, a case was explained in which a semicircular heater was used as the heating means provided below the furnace core tube 10, but the invention is not limited to this, and heating means such as an infrared lamp may also be used. Of course it's a good thing.
以上説明したように本発明は、炉芯管下方に、搬出され
たボートを加熱するための加熱手段を設置することによ
り、炉芯管内で高温状態での成膜が終了したウェハー及
びボートが、炉芯管下方に搬出される際に急冷されると
いう現象をなくす事が出来ることから、急冷によるボー
ト表面の膜のはがれ等によるパーティクルの発生を抑制
出来るため、歩留りを向上させることが出来るという効
果がある。As explained above, in the present invention, by installing a heating means below the furnace core tube to heat the boat carried out, the wafers and boats that have been subjected to film formation at high temperature in the furnace core tube can be heated. Since it is possible to eliminate the phenomenon of rapid cooling when being transported to the lower part of the furnace core tube, it is possible to suppress the generation of particles due to the peeling of the film on the boat surface due to rapid cooling, which has the effect of improving yield. There is.
第１図は本発明の一実施例の断面図、第２図（ａ）、（
、ｂ）は実施例におけるエンドキャップを炉芯管の下方
におろした場合の断面図及びＡ−Ａ′線線断断面図ある
。
１・・・アウター管、２・・・インナー管、３・・・エ
ンドキャップ、４・・・ボート、５・・・ウェハー、６
・・・加熱ヒーター、７・・・フランジ、８・・・ガス
導入管、９・・・保温用ヒーター、１０・・・炉芯管、
１１・・・排気管。FIG. 1 is a sectional view of an embodiment of the present invention, FIG. 2(a), (
, b) are a cross-sectional view and a cross-sectional view taken along the line A-A' in the embodiment when the end cap is lowered below the furnace core tube. 1... Outer tube, 2... Inner tube, 3... End cap, 4... Boat, 5... Wafer, 6
... Heating heater, 7... Flange, 8... Gas introduction pipe, 9... Heat retention heater, 10... Furnace core tube,
11...Exhaust pipe.
Claims (1)
トを保持し前記炉芯管内に搬入すると共に炉芯管を密封
するエンドキャップとを備えた減圧ＣＶＤ装置において
、エンドキャップにより搬出されたボートを加熱するた
めの加熱手段を前記炉芯管の下部に設けたことを特徴と
する減圧ＣＶＤ装置。A boat carried out by the end cap in a low-pressure CVD apparatus equipped with a furnace core tube whose bottom is open and an end cap that holds a boat on which wafers are placed, carries it into the furnace core tube, and seals the furnace core tube. A reduced pressure CVD apparatus characterized in that a heating means for heating the furnace core tube is provided at a lower part of the furnace core tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28900690A JPH04162712A (en) | 1990-10-26 | 1990-10-26 | Low pressure cvd apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28900690A JPH04162712A (en) | 1990-10-26 | 1990-10-26 | Low pressure cvd apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04162712A true JPH04162712A (en) | 1992-06-08 |
Family
ID=17737622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28900690A Pending JPH04162712A (en) | 1990-10-26 | 1990-10-26 | Low pressure cvd apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04162712A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6259061B1 (en) * | 1997-09-18 | 2001-07-10 | Tokyo Electron Limited | Vertical-heat-treatment apparatus with movable lid and compensation heater movable therewith |
-
1990
- 1990-10-26 JP JP28900690A patent/JPH04162712A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6259061B1 (en) * | 1997-09-18 | 2001-07-10 | Tokyo Electron Limited | Vertical-heat-treatment apparatus with movable lid and compensation heater movable therewith |
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