JPS58209112A - Vacuum cvd apparatus - Google Patents

Vacuum cvd apparatus

Info

Publication number
JPS58209112A
JPS58209112A JP9231182A JP9231182A JPS58209112A JP S58209112 A JPS58209112 A JP S58209112A JP 9231182 A JP9231182 A JP 9231182A JP 9231182 A JP9231182 A JP 9231182A JP S58209112 A JPS58209112 A JP S58209112A
Authority
JP
Japan
Prior art keywords
chamber
wafer
preliminary chamber
core tube
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9231182A
Other languages
Japanese (ja)
Inventor
Sueo Tsumura
津村　末朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9231182A priority Critical patent/JPS58209112A/en
Publication of JPS58209112A publication Critical patent/JPS58209112A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To prevent the oxidation of a wafer, by a method wherein a wafer is placed in a preliminary chamber, and after the gas in the chamber is replaced with an inert gas, the wafer is fed into a core tube. CONSTITUTION:A wafer is mounted on a quartz boat, which is then placed in a preliminary chamber 7 incorporating a quatrz tube 9 therein. With an inlet 2a closed with a lid 6, the chamber 7 is evacuated. The preliminary chamber 7 is cooled by means of a water-cooling pipe 8. Accordingly, the wafer is not oxidized. When a window 16 in the lid 6 is opened, N2 is introduced into the chamber 7 through a pipe 21 at a connection 10 to return the pressure inside the chamber 7 to the atmospheric pressure. The N2 jetting out from the window 16 prevents any air from entering the chamber 7. A rod is inserted through the window to move the boat to a high-temperature region 1a of the core tube 1. This constitution makes it possible to prevent the wafer from being oxidized by the air taken in when the wafer is moved to the high-temperature region 1a, so that it is made possible to eliminate any defects due to the oxidation.

Description

【発明の詳細な説明】 応炉芯管内に反応ガスを供給し半導体ウェハース上に膜
を成長させる減圧式ＣＶＤ装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a reduced pressure CVD apparatus for growing a film on a semiconductor wafer by supplying a reaction gas into a reactor core tube.

従来減圧式ＣＶＤ装置は第１図に示すように反応炉芯管
１の前段に石英管２が結合され、石英管２の゛ト導体ウ
エハース挿入口２ａにはＱ　ｌ）　７グ６でシールさｈ
たヲランジ４ａ，４ｂが取付けられ、ノランジ４ｂの前
面に保持されたＯ　ＩＪング５に前面蓋６が圧接され半
導体ウニ・・−ス挿入Ｄ　２　ａを真空ソールしたもの
である。この構造ではｔ導体ウニ・・−スを、ポートに
立てて石英管２を通して反応・Ｊ’芯管２内に入れる際
に外の空気もいっしょに取り込んでそのま＼亮温部に入
ってしまう。その場合高温下で取り込まれた空気により
半導体ウニ・・−ス表面が薄く酸化され、そのま＼ＣＶ
Ｄ処理を行うと、その酸化膜の上にＳｉ３Ｎ４（窒化膜
）やＰｏｌｙＳｉ（多結晶ンリコン膜）を成長させるこ
とになり、これが原因となってコンタクト不良等の不具
合が生じていた。In the conventional reduced pressure CVD apparatus, as shown in FIG. 1, a quartz tube 2 is connected to the front stage of a reactor core tube 1, and a conductor wafer insertion opening 2a of the quartz tube 2 is sealed with a Q1) 7 groove 6. h
The top lunges 4a and 4b are attached, the front cover 6 is pressed against the OIJ ring 5 held on the front side of the top lunge 4b, and the semiconductor unit insert D2a is vacuum-soled. In this structure, when the t-conductor sea urchin is placed in the port and introduced into the reaction/J' core tube 2 through the quartz tube 2, outside air is also taken in and directly enters the hot section. . In that case, the surface of the semiconductor unicorn is thinly oxidized by the air taken in at high temperatures, and it remains as it is.
When the D process is performed, Si3N4 (nitride film) or PolySi (polycrystalline silicon film) is grown on the oxide film, which causes problems such as poor contact.

本発明は前記問題点を解消するもので、反応炉芯管前段
に予備室を設け、一旦予備室内に半尊体つエ・・−スを
収容し真空に排気してからこれを反応炉芯管内に送り込
むようにしたことを特徴とするものである。　　　　　
　　　　　一以下、本発明の一実施例を第２図、第３図
によつて説明する。伺、第１図と同一構成のものには同
一イ・１号を付して説明する。The present invention solves the above-mentioned problems by providing a preliminary chamber in the front stage of the reactor core tube, and once storing the half-solid material in the preliminary chamber, evacuating it to a vacuum, and then transferring it to the reactor core. It is characterized by being fed into the pipe.
One embodiment of the present invention will be described below with reference to FIGS. 2 and 3. Components having the same configuration as those in FIG.

第２図において、従来の石英管２の前に金属製のｆ・端
室７を結合し、該予備室７の外周に水冷管８を配管する
。また、予備室７に石英管９を自装置〜、半導体ウエノ
・−スを乗せた石英ボートが、じかに予備室７の内壁に
触れるのを防ぐ。反応炉芯管１の高温部１ａと前記予備
室７との熱的絶縁を図るために石英管２と予備室７との
継ぎ部１０の上部には給排機構としての排気管１１を設
置し、排気管１１を水冷管１２で冷却する。半導体ウニ
・・−スを乗せた石英ボートは先ず冷却され、た予備室
７に送り込まれる。次に前面蓋６で予備室７の半導体ウ
ニ・・−ス挿入口２ａを閉塞し、排気管１１から予備室
７を真空に排気する。予備室７を真空に脱気ししかも冷
却しているから、予備室７内に送られた半導体ウニ・・
−スが酸化されることがない。次に前記石英ボートを予
備室７から反応Ｉ９」芯管１の高温部１ａに移すのであ
るが、予備室７内が真空に排気されている状態では石英
ボートを移動させることができない。そこて、本発明で
は前面畜６を二重の蓋構造としたものである。In FIG. 2, a metal f-end chamber 7 is connected in front of a conventional quartz tube 2, and a water-cooled tube 8 is installed around the outer periphery of the preliminary chamber 7. Further, the quartz tube 9 is placed in the preliminary chamber 7 to prevent the quartz boat carrying the semiconductor wafer from directly touching the inner wall of the preliminary chamber 7. In order to thermally insulate the high temperature part 1a of the reactor core tube 1 and the preliminary chamber 7, an exhaust pipe 11 as a supply/exhaust mechanism is installed above the joint 10 between the quartz tube 2 and the preliminary chamber 7. , the exhaust pipe 11 is cooled by a water-cooled pipe 12. The quartz boat carrying the semiconductor urchins is first cooled and sent to the preliminary chamber 7. Next, the front cover 6 is used to close the semiconductor unicorn insertion port 2a of the preliminary chamber 7, and the preliminary chamber 7 is evacuated through the exhaust pipe 11. Since the preliminary chamber 7 is evacuated to a vacuum and is also cooled, the semiconductor sea urchins sent into the preliminary chamber 7...
- The gas is not oxidized. Next, the quartz boat is moved from the preliminary chamber 7 to the high temperature section 1a of the reaction I9 core tube 1, but the quartz boat cannot be moved while the preliminary chamber 7 is evacuated. Therefore, in the present invention, the front compartment 6 has a double lid structure.

ス’ｌ　ワチ、第３図に示すＪ：　ウニ１ｉｊｌ　［ｌ
’＋ｌ　黙６　）（ｊ’、’　□１ｑｉ１６ａにビニオ
／１３を取付け、ピニオン１３と１合するラック１４を
／す／ダ１５に結合する。さらに１）′」面差６に操作
用開閉窓１６を開「］し、該操作用じトｊ閉窓１６に蓋
１７を設置し、蓋１７の旧軸１７ａにピニオン１８を取
付けると共にビニオ／１８と噛合するラック１９を／リ
ング２０に結合する。前記継ぎ部１０には給排機溝とし
ての給気管２１を連結し、開閉窓１６を開いたときに予
備室７内にＮ２がス（不活性ガス）を供給するものであ
る。予備室７内に給気管２１からのＮ２ガスを導入し大
気圧に戻す。大気圧になったときに熱１７を７１Ｊンダ
２０、ラック１９、ピニオン１８で回゛動させ開閉窓１
６を開く。予備室７内のＮ２ガスは開いた窓１６から噴
き出し、予備室７内に空気が侵入するのを阻止する。こ
の状軛で通常ＣＶＤで用いられるボートローダの棒を窓
１６からつっこんで石英ボートを反応炉芯管１の高温部
１ａに移ｆＩする４、 以Ｉ−のように本発明は半導体ウエノ・−スを予備室に
送り込んで真空にし、次に不活性ガスを供給して大気圧
に戻しウエノ・−スを反応炉芯管に送り込むようにしだ
ので、送り込むときに取り込まれた空気によりウニ・・
−スが酸化されるのを阻止することかで゛き、コンタク
ト不良等の不具合を回避できる効果を有するものである
。S'l Wachi, J shown in Figure 3: Urchin 1ijl [l
'+l silent 6) (j', ' □ Attach binio/13 to 1qi 16a, and connect rack 14 that fits with pinion 13 to /su/da 15.Furthermore, 1)'" Install an opening/closing window for operation on the difference 6. 16 is opened, a lid 17 is installed on the operating door 16, a pinion 18 is attached to the old shaft 17a of the lid 17, and a rack 19 that meshes with the binoculars 18 is connected to the ring 20. An air supply pipe 21 serving as a supply/discharge machine groove is connected to the joint part 10, and N2 gas (inert gas) is supplied into the preliminary chamber 7 when the opening/closing window 16 is opened. N2 gas from the air supply pipe 21 is introduced into the interior of the window 1 to return it to atmospheric pressure.When the pressure reaches atmospheric pressure, the heat 17 is rotated by the 71J cylinder 20, rack 19, and pinion 18 to close the opening/closing window 1.
Open 6. N2 gas in the auxiliary chamber 7 is blown out through the open window 16 to prevent air from entering the auxiliary chamber 7. In this state, the rod of a boat loader normally used in CVD is inserted through the window 16 and the quartz boat is transferred to the high temperature section 1a of the reactor core tube 1. Sea urchins are pumped into the preparatory chamber to create a vacuum, and then inert gas is supplied to return the pressure to atmospheric pressure, and the water is fed into the reactor core tube.
- It is possible to prevent the oxidation of the source, and has the effect of avoiding problems such as poor contact.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来のＣＶＤ装置の構成図、第２図は本発明の
１実施例を示す構成図、第５図は前面蓋の拡大図である
。 １・・反応炉芯管　　　　６・・・前面蓋７・・予備室
　　　　　１０・・・継ぎ部１１・・・排気管　　　　
　１２°゛給気管１６・・・操作用開閉窓 特許出願人　日本電気株式会社 第３図FIG. 1 is a block diagram of a conventional CVD apparatus, FIG. 2 is a block diagram showing one embodiment of the present invention, and FIG. 5 is an enlarged view of the front cover. 1...Reactor core tube 6...Front cover 7...Preliminary chamber 10...Joint part 11...Exhaust pipe
12°゛Air supply pipe 16...Operation opening/closing window Patent applicant NEC Corporation Figure 3

Claims (1)

【特許請求の範囲】[Claims] （１）減圧（大気圧以下）及び高温下で反応炉芯管内に
反応ガスを供給し半導体ウェハース上に膜を成従させる
減圧式ＣＶＤ装置において、前記反応炉芯管前段に冷却
された予備室を設置し、該予備室と反応炉芯管との継ぎ
部に真空排気及び不活性ガスの給気を行う給排機構を設
置し、前記予備室の半導体ウェハース挿入口に真空シー
ルする前面蓋を設けるとともに該前面蓋に操作用開閉窓
を備えたことを特徴とする減圧式ＣＶＤ装置。(1) In a reduced pressure CVD device that supplies a reaction gas into a reactor core tube under reduced pressure (below atmospheric pressure) and high temperature to form a film on a semiconductor wafer, a pre-cooled preliminary chamber is provided before the reactor core tube. A supply/exhaust mechanism for evacuation and supply of inert gas is installed at the joint between the preliminary chamber and the reactor core tube, and a vacuum-sealing front cover is installed on the semiconductor wafer insertion port of the preliminary chamber. A reduced pressure CVD apparatus characterized in that the front cover is provided with an opening/closing window for operation.
JP9231182A 1982-05-31 1982-05-31 Vacuum cvd apparatus Pending JPS58209112A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9231182A JPS58209112A (en) 1982-05-31 1982-05-31 Vacuum cvd apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9231182A JPS58209112A (en) 1982-05-31 1982-05-31 Vacuum cvd apparatus

Publications (1)

Publication Number Publication Date
JPS58209112A true JPS58209112A (en) 1983-12-06

Family

ID=14050849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9231182A Pending JPS58209112A (en) 1982-05-31 1982-05-31 Vacuum cvd apparatus

Country Status (1)

Country Link
JP (1) JPS58209112A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200415A (en) * 1983-04-28 1984-11-13 Toshiba Corp Semiconductor processing apparatus
JPS6298624A (en) * 1985-10-25 1987-05-08 Hitachi Ltd Heat-treatment furnace
JPS62276824A (en) * 1986-04-01 1987-12-01 Deisuko Haitetsuku:Kk Outside-air inclusion preventive device for vertical type semiconductor thermal treatment equipment
JPS62281418A (en) * 1986-05-30 1987-12-07 Teru Saamuko Kk Heating device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200415A (en) * 1983-04-28 1984-11-13 Toshiba Corp Semiconductor processing apparatus
JPS6298624A (en) * 1985-10-25 1987-05-08 Hitachi Ltd Heat-treatment furnace
JPS62276824A (en) * 1986-04-01 1987-12-01 Deisuko Haitetsuku:Kk Outside-air inclusion preventive device for vertical type semiconductor thermal treatment equipment
JPS62281418A (en) * 1986-05-30 1987-12-07 Teru Saamuko Kk Heating device

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