JPH0528756Y2 - - Google Patents
Info
- Publication number
- JPH0528756Y2 JPH0528756Y2 JP1986114790U JP11479086U JPH0528756Y2 JP H0528756 Y2 JPH0528756 Y2 JP H0528756Y2 JP 1986114790 U JP1986114790 U JP 1986114790U JP 11479086 U JP11479086 U JP 11479086U JP H0528756 Y2 JPH0528756 Y2 JP H0528756Y2
- Authority
- JP
- Japan
- Prior art keywords
- boat
- vertical
- wafers
- present
- charging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 235000012431 wafers Nutrition 0.000 description 41
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Description
【考案の詳細な説明】
〔産業上の利用分野〕
本考案は縦形CVD装置の反応炉内に搬入して
多数枚のウエーハを処理するために使用される縦
形CVDボートに関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a vertical CVD boat used for carrying into a reactor of a vertical CVD apparatus and processing a large number of wafers.
従来の縦形CVDボートは、第４図示のように
上，下板１，２間に３本１組のチヤージ用垂直軸
３ａ〜３ｃを１組、取付けただけの構造になつて
おり、この１組のチヤージ用垂直軸３ａ〜３ｃの
内側に縦方向に並設された多数の溝４にそれぞれ
ウエーハ５を挿入保持できるものである。６は下
板２と底板７を頸れ部８で連結してなるボート下
部を示す。
A conventional vertical CVD boat has a structure in which a set of three vertical charging shafts 3a to 3c are installed between the upper and lower plates 1 and 2, as shown in Figure 4. The wafers 5 can be inserted and held in a large number of grooves 4 arranged in parallel in the vertical direction inside the pair of vertical charging shafts 3a to 3c. 6 shows the lower part of the boat, which is formed by connecting the lower plate 2 and the bottom plate 7 at the neck part 8.
〔考案が解決しようとする問題点〕
上記従来ボートは１組のチヤージ用垂直軸３ａ
〜３ｃだけであるので、ウエーハ５の保持枚数
は、ポリシリコン膜、窒化膜の場合、100枚が限
度であり、これ以上の枚数のウエーハ５を処理し
ようとする場合には、ボート長を長く、延いては
反応炉の均熱長、換言すればヒータ長を長くする
必要があり、装置が長くなつた分、大形になるば
かりでなく、ヒータ長を長くする必要があるた
め、ガスの流れ方向の膜質のバラツキが増すとい
う問題点があつた。[Problems to be solved by the invention] The above conventional boat has one set of vertical charging shafts 3a.
~3c, the maximum number of wafers 5 that can be held is 100 in the case of polysilicon films and nitride films.If you want to process more wafers 5 than this, the boat length must be increased. By extension, it is necessary to lengthen the soaking length of the reactor, in other words, the length of the heater, and as the equipment becomes longer, it not only becomes larger, but also the length of the heater needs to be lengthened. There was a problem that the variation in film quality in the flow direction increased.
本考案ボートは上記の問題点を解決するため、
第１図示のように上，下板１，２間に３本１組の
チヤージ用垂直軸３ａ〜３ｃを取付け、これらの
チヤージ用垂直軸３ａ〜３ｃの内側に縦方向に並
設された多数の溝４にそれぞれウエーハ５を挿入
保持することができる縦型CVDボートにおいて、
上記３本１組のチヤージ用垂直軸３ａ〜３ｃを
上，下板１，２間に複数組、各組共通の１本のチ
ヤージ用垂直軸３ａを中心とする同心状に取付け
てなる構成としたものである。
The boat of this invention solves the above problems,
As shown in the first figure, a set of three charging vertical shafts 3a to 3c are installed between the upper and lower plates 1 and 2, and a large number of vertical charging shafts 3a to 3c are arranged vertically in parallel inside these vertical charging shafts 3a to 3c. In a vertical CVD boat that can insert and hold wafers 5 into grooves 4 of
A plurality of sets of the above-mentioned three vertical charging shafts 3a to 3c are installed between the upper and lower plates 1 and 2, concentrically with one charging vertical shaft 3a common to each set. This is what I did.
このような構成とすることにより同心状の複数
組のチヤージ用垂直軸３ａ〜３ｃ，３ａ〜３ｃ…
…の多数の溝４に、ボート長を長くすることなく
従来の組数倍の枚数のウエーハ５を挿入保持する
ことができる。この多数枚のウエーハ５を保持し
たボートを縦形CVD装置の反応炉内に搬入し、
ガスを垂直方向に流しつつヒータにより加熱すれ
ば、従来の組数倍の枚数のウエーハ５を一度に処
理することができる。
With this configuration, a plurality of concentric sets of vertical charging shafts 3a to 3c, 3a to 3c...
It is possible to insert and hold a number of wafers 5 twice as many as the conventional number of sets into the large number of grooves 4 without increasing the length of the boat. The boat holding this large number of wafers 5 is carried into the reactor of the vertical CVD equipment,
By heating the wafers 5 with a heater while flowing the gas in the vertical direction, it is possible to process wafers 5 that are twice as many as the conventional number of sets at one time.
以下図面により本考案の一実施例を説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は本考案ボートの一実施例を示す斜視図
である。本実施例のボートは、石英により製作さ
れており、上，下板１，２間に３本１組のチヤー
ジ用垂直軸３ａ〜３ｃを３組、１本の垂直軸３ａ
を各組共通に使用すべく中心に位置させて同心状
に取付けてなる。４は各組のチヤージ用垂直軸３
ａ〜３ｃの内側に縦方向に並設された少し上向き
の多数の溝で、中心の垂直軸３ａには周方向に３
箇所設けられている。５は各組のチヤージ用垂直
軸３ａ〜３ｃの多数の溝４に、水平面に対し微少
角度（2°位）をもつて挿入保持（チヤージ）され
た多数枚のウエーハである。６は下板２と底板７
を頸れ部８で連結してなるボート下部を示す。 FIG. 1 is a perspective view showing an embodiment of the boat of the present invention. The boat of this embodiment is made of quartz, and has three sets of charging vertical shafts 3a to 3c between the upper and lower plates 1 and 2, and one vertical shaft 3a.
are mounted concentrically at the center for common use in each set. 4 is a vertical shaft 3 for charging each set.
A to 3c have a large number of grooves arranged vertically in parallel and slightly upward, and the center vertical axis 3a has 3 grooves in the circumferential direction.
There are places set up. A large number of wafers 5 are inserted and held (charged) into a large number of grooves 4 of each set of vertical charging shafts 3a to 3c at a slight angle (approximately 2 degrees) with respect to the horizontal plane. 6 is the lower plate 2 and the bottom plate 7
The lower part of the boat is shown, which is formed by connecting the two at the neck part 8.
このような本考案ボート９は、上，下板１，２
間に３本１組のチヤージ用垂直軸３ａ〜３ｃを複
数組、この実施例の場合３組、取付けた構造にな
つているため、ウエーハ５の保持枚数は、第４図
示の従来ボートを用いる場合の組数倍となり、本
実施例の場合の枚数は従来の３倍の枚数となる。 The boat 9 of the present invention has upper and lower plates 1 and 2.
Since the structure is such that a plurality of sets of three vertical charging shafts 3a to 3c, three sets in this embodiment, are attached between them, the number of wafers 5 that can be held is determined by using the conventional boat shown in FIG. The number of sets in this embodiment is three times that of the conventional case.
第２図は本考案ボートを用いる縦形CVD装置
の一例を示す断面図、第３図は本考案ボートへの
ウエーハ自動挿入装置と縦形CVD装置の反応炉
へのボート搬送装置の斜視図である。 FIG. 2 is a sectional view showing an example of a vertical CVD apparatus using a boat of the present invention, and FIG. 3 is a perspective view of an automatic wafer insertion device into the boat of the present invention and a boat transfer device to a reactor of the vertical CVD apparatus.
第２図及び第３図中、１４は石英製内、外管１
１，１２とヒータ１３よりなる反応炉、１５はこ
の反応炉１４内にガスを導入するためのガス導入
口で、ガスは下方より上方へ向かつて流される。
１６は反応炉１４内を排気するための排気口で、
排気装置（図示せず）に連通している。 In Figures 2 and 3, 14 is the inner and outer tube 1 made of quartz.
1, 12 and a heater 13; 15 is a gas inlet for introducing gas into the reactor 14; the gas is flowed upward from below;
16 is an exhaust port for exhausting the inside of the reactor 14;
It communicates with an exhaust system (not shown).
１７は本考案ボート９を載置するための回転台
で、この回転台１７の回転軸１８はキヤツプ板１
９に回転自在に垂設され、ベルト２０を介してモ
ータ２１により回転せしめられる。２２は石英カ
バー、２３は磁気シール部、２４はキヤツプ板１
９のアームで、キヤツプ昇降機構２５により昇降
される。本考案ボート９はキヤツプ板１９に設け
られた回転台１７上に載置され、キヤツプ昇降機
構２５により反応炉１４内に搬入される。２６は
ボート下部６の頸れ部８に先端載置部２６ａを嵌
め込んで本考案ボート９を載置しウエーハ挿入位
置と反応炉の下方位置との間を回動により搬送す
る搬送アームによるボート搬送機構である。縦形
CVD装置の反応炉へのボート搬送装置は、この
ボート搬送機構２６とキヤツプ昇降機構２５とよ
りなる。 Reference numeral 17 denotes a turntable on which the boat 9 of the present invention is placed, and a rotating shaft 18 of this turntable 17 is connected to the cap plate 1.
9, and is rotatably mounted on the shaft 9, and is rotated by a motor 21 via a belt 20. 22 is a quartz cover, 23 is a magnetic seal part, 24 is a cap plate 1
The cap is raised and lowered by an arm 9 by a cap raising and lowering mechanism 25. The boat 9 of the present invention is placed on a rotating table 17 provided on a cap plate 19, and is carried into the reactor 14 by a cap lifting/lowering mechanism 25. Reference numeral 26 denotes a boat using a transfer arm, on which the boat 9 of the present invention is mounted by fitting the tip mounting part 26a into the neck part 8 of the lower part 6 of the boat, and transports the wafer by rotation between the wafer insertion position and the lower position of the reactor. It is a transport mechanism. Vertical
The boat transport device to the reactor of the CVD apparatus consists of the boat transport mechanism 26 and the cap lifting/lowering mechanism 25.
２７はウエーハカセツト、２８はカセツトエレ
ベータ、２９はウエーハカセツト２７よりウエー
ハ５を１枚ずつ取り出し、この取り出されたウエ
ーハ５をウエーハ挿入位置の本考案ボート９に挿
入するためのウエーハローダである。３０はボー
ト昇降機構で、本考案ボート９を溝間隔分ずつ上
昇または下降するためのものである。本考案ボー
ト９へのウエーハ自動挿入装置は、カセツトエレ
ベータ２８、ウエーハローダ２９及びボート昇降
機構３０よりなる。 27 is a wafer cassette, 28 is a cassette elevator, and 29 is a wafer loader for taking out wafers 5 one by one from the wafer cassette 27 and inserting the taken out wafers 5 into the boat 9 of the present invention at the wafer insertion position. Reference numeral 30 denotes a boat elevating mechanism for raising or lowering the boat 9 of the present invention by the distance between the grooves. The automatic wafer insertion device into the boat 9 of the present invention comprises a cassette elevator 28, a wafer loader 29, and a boat elevating mechanism 30.
ウエーハ挿入位置の本考案ボート９はボート昇
降機構３０の載置部に載せられている。ウエーハ
ローダ２９はウエーハカセツト２７からウエーハ
５を１枚ずつ取り出し、この取り出されたウエー
ハ５を本考案ボート９の溝４に挿入する。しかる
後、本考案ボート９をボート昇降機構３０により
溝間隔分、上昇または下降させ、次の溝４にウエ
ーハローダ２９より取り出されたウエーハ５を挿
入する。このようにして１組分のウエーハ挿入保
持が終了したら、本考案ボート９を回転して次の
組へのウエーハ挿入保持を行う。 The boat 9 of the present invention at the wafer insertion position is placed on the mounting portion of the boat lifting mechanism 30. The wafer loader 29 takes out the wafers 5 one by one from the wafer cassette 27 and inserts the taken out wafers 5 into the groove 4 of the boat 9 of the present invention. Thereafter, the boat 9 of the present invention is raised or lowered by the groove interval by the boat lifting mechanism 30, and the wafer 5 taken out from the wafer loader 29 is inserted into the next groove 4. When the insertion and holding of wafers for one set is completed in this manner, the boat 9 of the present invention is rotated to insert and hold the wafers into the next set.
全組へのウエーハ挿入保持が完了したら、当該
本考案ボート９をボート搬送機構２６のアーム先
端載置部２６ａに移して回転させ、ウエーハ挿入
位置より反応炉の下方位置まで搬送する。当該下
方位置で本考案ボート９をキヤツプ板１９に設け
られた回転台１７上に移し、このキヤツプ板１９
をキヤツプ昇降機構２５により上昇させて本考案
ボート９を反応炉１４内に搬入する。 When the wafers have been inserted and held in all groups, the boat 9 of the present invention is transferred to the arm tip mounting section 26a of the boat transport mechanism 26, rotated, and transported from the wafer insertion position to a position below the reactor. At the lower position, the boat 9 of the present invention is moved onto the rotary table 17 provided on the cap plate 19, and
The boat 9 of the present invention is carried into the reactor 14 by being raised by the cap lifting mechanism 25.
しかる後、本考案ボート９を載置した回転台１
７をモータ２１により回転し、反応炉１４内を排
気口１６に連通した排気装置により排気する一
方、ガス導入口１５より反応炉１４内にガスを導
入し下方より上方へ向かつて流す。この状態でヒ
ータ１３により本考案ボート９に保持された多数
枚、即ち従来の組数倍の枚数のウエーハ５を加熱
することにより一度に処理することができる。例
えば、ポリシリコン膜、窒化膜などのCVD膜の
生成においては、従来、100枚が限度にあつたが、
本実施例の場合は、
100×３＝300枚の処理ができる。 After that, the rotating table 1 on which the boat 9 of the present invention is mounted
7 is rotated by a motor 21, and the inside of the reactor 14 is evacuated by an exhaust device communicating with an exhaust port 16, while gas is introduced into the reactor 14 from the gas inlet 15 and flows from the bottom to the top. In this state, the heater 13 heats a large number of wafers 5 held in the boat 9 of the present invention, that is, the number of wafers 5 that is twice the number of wafers in the conventional system, so that the wafers 5 can be processed at once. For example, in the production of CVD films such as polysilicon films and nitride films, the conventional limit was 100 films, but
In the case of this embodiment, 100×3=300 sheets can be processed.
上述のように本考案によれば、上，下板１，２
間に３本一組のチヤージ用垂直軸３ａ〜３ｃを複
数組、各組共通の１本のチヤージ用垂直軸３ａを
中心とする同心状に取付けているので、従来の組
数倍の枚数のウエーハ５をボート長を長くするこ
となく保持することができ、延いては反応炉１４
の均熱長、換言すればヒータ長を長くし装置を大
形にしなくても、従来の組数倍の枚数のウエーハ
を処理することができる。
As described above, according to the present invention, the upper and lower plates 1 and 2
Since multiple sets of three vertical charging shafts 3a to 3c are installed concentrically around one charging vertical shaft 3a common to each set, the number of sheets can be doubled compared to the conventional number of sets. The wafers 5 can be held without increasing the length of the boat, and the reactor 14 can be held.
It is possible to process wafers that are twice as many as the conventional number of sets without increasing the soaking length, in other words, the heater length and increasing the size of the apparatus.
又、本考案においては、ボート長を長くする必
要がないことと相まつて上，下板１，２間に３本
一組のチヤージ用垂直軸３ａ〜３ｃを複数組、各
組共通の１本のチヤージ用垂直軸３ａを中心とす
る同心状に取付けることによりボート径も複数の
割には大径にならず、装置の小形化に寄与するこ
とができる。 In addition, in the present invention, there is no need to increase the length of the boat, and multiple sets of three vertical charging shafts 3a to 3c are provided between the upper and lower plates 1 and 2, with one shaft common to each set. By attaching them concentrically around the vertical charging shaft 3a, the diameter of the boat does not become large compared to the plurality of boats, which contributes to miniaturization of the device.
また、ヒータ長を長くする必要がないので、ガ
スの流れ方向の膜質のバラツキを抑えることがで
きる。 Furthermore, since there is no need to increase the heater length, variations in film quality in the gas flow direction can be suppressed.
第１図は本考案ボートの一実施例を示す斜視
図、第２図は本考案ボートを用いる縦形CVD装
置の一例を示す断面図、第３図は本考案ボートへ
のウエーハ自動挿入装置と縦形CVD装置の反応
炉へのボート搬送装置の斜視図、第４図は従来ボ
ートの一例を示す斜視図である。
１，２……上，下板、３ａ〜３ｃ……チヤージ
用垂直軸、４……溝、５……ウエーハ、６……ボ
ート下部、７……底板、８……頸れ部、９……本
考案ボート。
Fig. 1 is a perspective view showing an embodiment of the boat of the present invention, Fig. 2 is a sectional view showing an example of a vertical CVD device using the boat of the present invention, and Fig. 3 is a wafer automatic insertion device into the boat of the present invention and a vertical type CVD device. A perspective view of a boat conveyance device to a reactor of a CVD apparatus. FIG. 4 is a perspective view showing an example of a conventional boat. 1, 2... Upper and lower plates, 3a to 3c... Vertical shaft for charging, 4... Groove, 5... Wafer, 6... Lower part of boat, 7... Bottom plate, 8... Neck, 9... ...This invented boat.
Claims (1)
軸３ａ〜３ｃを取付け、これらのチヤージ用垂直
軸３ａ〜３ｃの内側に縦方向に並設された多数の
溝４にそれぞれウエーハ５を挿入保持することが
できる縦型CVDボートにおいて、上記３本一組
のチヤージ用垂直軸３ａ〜３ｃを上，下板１，２
間に複数組、各組共通の１本のチヤージ用垂直軸
３ａを中心とする同心状に取付け、下板２と底板
７を、ボート搬送時に使用される頸れ部８で連結
してなる縦型CVDボート。 A set of three vertical charging shafts 3a to 3c are installed between the upper and lower plates 1 and 2, and each wafer is inserted into a large number of grooves 4 arranged vertically in parallel inside these vertical charging shafts 3a to 3c. In the vertical CVD boat that can insert and hold the three charging vertical shafts 3a to 3c, the upper and lower plates 1 and 2
In between, multiple sets are installed concentrically around one vertical charging shaft 3a common to each set, and the lower plate 2 and the bottom plate 7 are connected by a neck part 8 used during boat transport. Type CVD boat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986114790U JPH0528756Y2 (en) | 1986-07-25 | 1986-07-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986114790U JPH0528756Y2 (en) | 1986-07-25 | 1986-07-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6320426U JPS6320426U (en) | 1988-02-10 |
| JPH0528756Y2 true JPH0528756Y2 (en) | 1993-07-23 |
Family
ID=30997847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986114790U Expired - Lifetime JPH0528756Y2 (en) | 1986-07-25 | 1986-07-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0528756Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3131601B2 (en) * | 1995-03-02 | 2001-02-05 | 東京エレクトロン株式会社 | Heat treatment apparatus and heat treatment method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61212014A (en) * | 1985-03-18 | 1986-09-20 | Tokyo Erekutoron Kk | Semiconductor wafer processing device using chemical vapor deposition method |
-
1986
- 1986-07-25 JP JP1986114790U patent/JPH0528756Y2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61212014A (en) * | 1985-03-18 | 1986-09-20 | Tokyo Erekutoron Kk | Semiconductor wafer processing device using chemical vapor deposition method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6320426U (en) | 1988-02-10 |
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