JPS6188516A - Wafer processing apparatus - Google Patents

Abstract

PURPOSE:To obtain a grown film of uniform thickness by providing sinks of gas between wafers and exhausting the gas which enters from periphery of wafer to the center of wafers. CONSTITUTION:Wafers 4 are placed in parallel with equal interval within a furnace core tube 1 and the gas leadout ports 5 are provided between wafers. According to this structure, even when wafer has large diameter, gas enters the interior from the periphery of wafer, the gas completing the reaction is exhausted from the center of wafer through the gas exhaust port 5. Thereby, the gas is easily supplied to the center, making small difference of film thickness with the periphery.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to epitaxial growth of half-quadruple wafers together.
The present invention relates to an apparatus for processing various materials such as vapor phase growth (CVD), and particularly to a wafer processing apparatus that can reduce variations in processing results within a wafer.

In recent years, as large-scale integrated circuits (LSI) have become more highly integrated, the chimp size has become thicker, and in order to increase mass production efficiency, the wafers used have become larger in diameter, and wafers with a diameter of 6 inches or more are used in the mass production process. , came to be used for .

Therefore, it is necessary to solve the problems of various devices for handling large diameter wafers.

[Conventional technology]

FIG. 2 is a schematic cross-sectional view of a conventional wafer processing apparatus.

Here, explanation will be given taking a CVD apparatus as an example.

In the figure, 1 is a furnace core tube, 2 is a lid, and 3 is a wafer holder (
or wafer basket), 4 is each wafer. 1,
2.3 is made of quartz.

As wafers become larger in diameter, in the device shown in which wafers are arranged in parallel, gas enters the inside from the periphery of the wafer, and the gas that has completed the reaction exits from the periphery of the wafer. When they collide, they swirl or stagnate, creating irregular flows. Therefore, it is difficult for gas to be supplied to the center of the wafer, and the difference in film thickness between the center and the periphery increases.

For this reason, increasing the spacing between wafers will reduce the throughput, and there will be no point in increasing the diameter.

[Problem that the invention seeks to solve]

Even as wafer diameters have increased, there has been no suitable method for introducing gas to the center of the wafer without increasing the spacing between the wafers.

[Means for solving problems]

The above-mentioned problem can be solved by the wafer processing apparatus according to the present invention, in which a plurality of wafers can be arranged substantially parallel to each other at intervals, and a gas outlet is provided between the wafers.

[Effect]

The uniformity of the growth thickness can be improved by providing a gas sink between the wafers so that gas entering from the wafer periphery is exhausted from the center of the wafer, thereby smoothing the gas supply.

〔Example〕

FIG. 1 is a schematic cross-sectional view of a wafer processing apparatus according to the present invention.

Here again, explanation will be given using a CVD apparatus as an example.

In the figure, 1 is a furnace core tube, 2 is a lid, 4 is each wafer, 5 is a gas outlet, and 6 is a heater.

Wafer holder (or wafer bus kent) for convenience of explanation
4 will be omitted.

In this example, even if the diameter of the wafer is increased, the gas enters inside from the periphery of the wafer, and the gas that has completed the reaction exits from the center of the wafer 4 through the gas outlet 5. Gas flows regularly, gas is easily supplied to the center of the wafer, and the difference in film thickness between the center and the periphery is reduced.

Therefore, there is no need to widen the interval between wafers, and even if the diameter is increased, the number of wafers processed does not decrease.

As an example, in a phosphosilicate glass (PSG) CVD apparatus in which 8"φ wafers are arranged at 5 mm intervals, a quartz capillary tube with an opening end (sink) is arranged approximately in the middle of the wafer as the gas outlet 5, and these The quartz tubes were put together to form an exhaust pipe, and this was connected to an exhaust pump.

As a result, the PSG film thickness distribution, which was conventionally 1 μm±10%, has become 1 μm±5%.

Here, the gas outlet 5 is constructed so that it can be temporarily retracted so as not to become an obstacle to loading and unloading the wafer.

Alternatively, the gas outlet 5 may be integrated with the wafer basket 4.

In the embodiment, a case is shown in which there is one sink for each drawer opening 5 at each interval, but a plurality of sinks may be provided.

〔Effect of the invention〕

As described above in detail, according to the present invention, even if the diameter of the wafer is increased, gas can be introduced to the center of the wafer without increasing the distance between the wafers, and an apparatus with high processing accuracy can be obtained.

[Brief explanation of drawings]

FIG. 1 is a schematic cross-sectional view of a wafer processing apparatus according to the present invention, and FIG. 2 is a schematic cross-sectional view of a conventional wafer processing apparatus. In the figure, 1 is a furnace core tube, 2 is a lid, 3 is a wafer holder, 4 is a wafer, 5 is a gas outlet, and 6 is a heater. Grass l @ 2nd figure ge Jno

Claims (1)

[Claims] A wafer processing apparatus characterized in that a plurality of wafers can be arranged substantially parallel to each other at intervals, and a gas outlet is provided between the wafers.