JPS62199019A - Wafer treatment device - Google Patents

Wafer treatment device

Info

Publication number
JPS62199019A
JPS62199019A JP4039186A JP4039186A JPS62199019A JP S62199019 A JPS62199019 A JP S62199019A JP 4039186 A JP4039186 A JP 4039186A JP 4039186 A JP4039186 A JP 4039186A JP S62199019 A JPS62199019 A JP S62199019A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
upper electrode
supply holes
gas supply
radius
wafer treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4039186A
Inventor
Takaaki Sasaki
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To enable the wafer treatment such as formation of CVD films with high uniformity by forming gas supply holes of an upper electrode so that a gas flow velocity on the circumference of a radius on which a substrate to be treated exists satisfies a specified relation.
CONSTITUTION: In a wafer treatment device of parallel flat plate system comprising gas supply holes 17 on an upper electrode 16 opposed to a substrate to be treated, a distance between the processed substrate and the upper electrode is H, a radius of an i-th pitch circle from the center in the upper electrode is ri(i=1, 2, 3,...), the number and diameter of the gas supply holes 17 are ni and di respectively, and a coefficient is C. In this case, the gas supply holes 17 whose ri, ni and di are determined so that a gas flow velocity Wri on a circumference of a radius ri satisfies the equation in the Fig. is formed on the upper electrode 16 uniformly as a whole. By such a constitution, a flowing velocity of the gas supplied to a wafer through the gas supply holes 17 is always constant to a radius direction. Accordingly, the wafer treatment can be effected high uniformity.
COPYRIGHT: (C)1987,JPO&Japio
JP4039186A 1986-02-27 1986-02-27 Wafer treatment device Pending JPS62199019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4039186A JPS62199019A (en) 1986-02-27 1986-02-27 Wafer treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4039186A JPS62199019A (en) 1986-02-27 1986-02-27 Wafer treatment device

Publications (1)

Publication Number Publication Date
JPS62199019A true true JPS62199019A (en) 1987-09-02

Family

ID=12579357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4039186A Pending JPS62199019A (en) 1986-02-27 1986-02-27 Wafer treatment device

Country Status (1)

Country Link
JP (1) JPS62199019A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031571A (en) * 1988-02-01 1991-07-16 Mitsui Toatsu Chemicals, Inc. Apparatus for forming a thin film on a substrate
US6402848B1 (en) * 1999-04-23 2002-06-11 Tokyo Electron Limited Single-substrate-treating apparatus for semiconductor processing system
US6767795B2 (en) 2002-01-17 2004-07-27 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOXNY
US6812100B2 (en) 2002-03-13 2004-11-02 Micron Technology, Inc. Evaporation of Y-Si-O films for medium-k dielectrics
US6852167B2 (en) * 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US6884739B2 (en) 2002-08-15 2005-04-26 Micron Technology Inc. Lanthanide doped TiOx dielectric films by plasma oxidation
US6921702B2 (en) 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US6953730B2 (en) 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US6967154B2 (en) 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
WO2006020424A3 (en) * 2004-08-02 2007-06-28 Eric A Armour Multi-gas distribution injector for chemical vapor deposition reactors
US7622355B2 (en) 2002-06-21 2009-11-24 Micron Technology, Inc. Write once read only memory employing charge trapping in insulators
US8921914B2 (en) 2005-07-20 2014-12-30 Micron Technology, Inc. Devices with nanocrystals and methods of formation

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031571A (en) * 1988-02-01 1991-07-16 Mitsui Toatsu Chemicals, Inc. Apparatus for forming a thin film on a substrate
US6402848B1 (en) * 1999-04-23 2002-06-11 Tokyo Electron Limited Single-substrate-treating apparatus for semiconductor processing system
US6852167B2 (en) * 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US6953730B2 (en) 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US6767795B2 (en) 2002-01-17 2004-07-27 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOXNY
US6812100B2 (en) 2002-03-13 2004-11-02 Micron Technology, Inc. Evaporation of Y-Si-O films for medium-k dielectrics
US6930346B2 (en) 2002-03-13 2005-08-16 Micron Technology, Inc. Evaporation of Y-Si-O films for medium-K dielectrics
US7622355B2 (en) 2002-06-21 2009-11-24 Micron Technology, Inc. Write once read only memory employing charge trapping in insulators
US6921702B2 (en) 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US6884739B2 (en) 2002-08-15 2005-04-26 Micron Technology Inc. Lanthanide doped TiOx dielectric films by plasma oxidation
US6967154B2 (en) 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
WO2006020424A3 (en) * 2004-08-02 2007-06-28 Eric A Armour Multi-gas distribution injector for chemical vapor deposition reactors
US8921914B2 (en) 2005-07-20 2014-12-30 Micron Technology, Inc. Devices with nanocrystals and methods of formation

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