JPS59182217A - 多結晶シリコンウエハの製造方法 - Google Patents
多結晶シリコンウエハの製造方法Info
- Publication number
- JPS59182217A JPS59182217A JP5445583A JP5445583A JPS59182217A JP S59182217 A JPS59182217 A JP S59182217A JP 5445583 A JP5445583 A JP 5445583A JP 5445583 A JP5445583 A JP 5445583A JP S59182217 A JPS59182217 A JP S59182217A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- melt
- release agent
- silicon
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 27
- 239000010703 silicon Substances 0.000 title claims abstract description 27
- 239000000155 melt Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims abstract description 7
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 5
- 239000003960 organic solvent Substances 0.000 claims abstract description 4
- 238000001035 drying Methods 0.000 claims abstract 2
- 239000010410 layer Substances 0.000 claims description 71
- 239000006082 mold release agent Substances 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 239000011247 coating layer Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 abstract description 16
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 238000011109 contamination Methods 0.000 abstract 1
- 238000011084 recovery Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 29
- 235000012431 wafers Nutrition 0.000 description 21
- 229920001296 polysiloxane Polymers 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 101100313164 Caenorhabditis elegans sea-1 gene Proteins 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- HXGWMCJZLNWEBC-UHFFFAOYSA-K lithium citrate tetrahydrate Chemical compound [Li+].[Li+].[Li+].O.O.O.O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HXGWMCJZLNWEBC-UHFFFAOYSA-K 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5445583A JPS59182217A (ja) | 1983-03-30 | 1983-03-30 | 多結晶シリコンウエハの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5445583A JPS59182217A (ja) | 1983-03-30 | 1983-03-30 | 多結晶シリコンウエハの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59182217A true JPS59182217A (ja) | 1984-10-17 |
| JPH0314767B2 JPH0314767B2 (enrdf_load_stackoverflow) | 1991-02-27 |
Family
ID=12971151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5445583A Granted JPS59182217A (ja) | 1983-03-30 | 1983-03-30 | 多結晶シリコンウエハの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59182217A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4200283A1 (de) * | 1991-01-08 | 1992-07-09 | Sematech Inc | Schleudergiessen von siliziumwafern unter nachwachsen von silizium |
| JPH04133118U (ja) * | 1991-05-31 | 1992-12-10 | ヤンマー農機株式会社 | 苗載台における苗の縦搬送装置 |
| CN1073005C (zh) * | 1996-12-19 | 2001-10-17 | 艾利森电话股份有限公司 | 制备弹性凸起的方法 |
-
1983
- 1983-03-30 JP JP5445583A patent/JPS59182217A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4200283A1 (de) * | 1991-01-08 | 1992-07-09 | Sematech Inc | Schleudergiessen von siliziumwafern unter nachwachsen von silizium |
| DE4200283C2 (de) * | 1991-01-08 | 1998-01-29 | Sematech Inc | Verfahren und Vorrichtung zum Schleudergießen von Siliziumwafern unter Nachwachsen von Silizium |
| JPH04133118U (ja) * | 1991-05-31 | 1992-12-10 | ヤンマー農機株式会社 | 苗載台における苗の縦搬送装置 |
| CN1073005C (zh) * | 1996-12-19 | 2001-10-17 | 艾利森电话股份有限公司 | 制备弹性凸起的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0314767B2 (enrdf_load_stackoverflow) | 1991-02-27 |
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