JPH049370B2 - - Google Patents

Info

Publication number
JPH049370B2
JPH049370B2 JP57050543A JP5054382A JPH049370B2 JP H049370 B2 JPH049370 B2 JP H049370B2 JP 57050543 A JP57050543 A JP 57050543A JP 5054382 A JP5054382 A JP 5054382A JP H049370 B2 JPH049370 B2 JP H049370B2
Authority
JP
Japan
Prior art keywords
plane
wafer
silicon
turntable
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57050543A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58166716A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57050543A priority Critical patent/JPS58166716A/ja
Priority to US06/373,039 priority patent/US4561486A/en
Priority to AU83147/82A priority patent/AU562656B2/en
Priority to EP82302246A priority patent/EP0065373B1/en
Priority to DE8282302246T priority patent/DE3277974D1/de
Publication of JPS58166716A publication Critical patent/JPS58166716A/ja
Publication of JPH049370B2 publication Critical patent/JPH049370B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/008—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method using centrifugal force to the charge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
JP57050543A 1981-04-30 1982-03-29 多結晶シリコンウエハの製造方法 Granted JPS58166716A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57050543A JPS58166716A (ja) 1982-03-29 1982-03-29 多結晶シリコンウエハの製造方法
US06/373,039 US4561486A (en) 1981-04-30 1982-04-29 Method for fabricating polycrystalline silicon wafer
AU83147/82A AU562656B2 (en) 1981-04-30 1982-04-29 Fabricating polycrystalline silicon wafers
EP82302246A EP0065373B1 (en) 1981-04-30 1982-04-30 Method fabricating a polycrystalline silicon wafer
DE8282302246T DE3277974D1 (en) 1981-04-30 1982-04-30 Method fabricating a polycrystalline silicon wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57050543A JPS58166716A (ja) 1982-03-29 1982-03-29 多結晶シリコンウエハの製造方法

Publications (2)

Publication Number Publication Date
JPS58166716A JPS58166716A (ja) 1983-10-01
JPH049370B2 true JPH049370B2 (enrdf_load_stackoverflow) 1992-02-20

Family

ID=12861923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57050543A Granted JPS58166716A (ja) 1981-04-30 1982-03-29 多結晶シリコンウエハの製造方法

Country Status (1)

Country Link
JP (1) JPS58166716A (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5427720A (en) * 1977-08-03 1979-03-02 Nec Corp Process amplifier of color pickup unit
JPS5939897B2 (ja) * 1980-03-14 1984-09-27 工業技術院長 多結晶シリコン半導体の製造方法

Also Published As

Publication number Publication date
JPS58166716A (ja) 1983-10-01

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