JPS59181614A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59181614A
JPS59181614A JP5595783A JP5595783A JPS59181614A JP S59181614 A JPS59181614 A JP S59181614A JP 5595783 A JP5595783 A JP 5595783A JP 5595783 A JP5595783 A JP 5595783A JP S59181614 A JPS59181614 A JP S59181614A
Authority
JP
Japan
Prior art keywords
insulating film
film
forming
contact hole
diffusion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5595783A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0481323B2 (enrdf_load_stackoverflow
Inventor
Masaki Sato
正毅 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP5595783A priority Critical patent/JPS59181614A/ja
Publication of JPS59181614A publication Critical patent/JPS59181614A/ja
Publication of JPH0481323B2 publication Critical patent/JPH0481323B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP5595783A 1983-03-31 1983-03-31 半導体装置の製造方法 Granted JPS59181614A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5595783A JPS59181614A (ja) 1983-03-31 1983-03-31 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5595783A JPS59181614A (ja) 1983-03-31 1983-03-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59181614A true JPS59181614A (ja) 1984-10-16
JPH0481323B2 JPH0481323B2 (enrdf_load_stackoverflow) 1992-12-22

Family

ID=13013553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5595783A Granted JPS59181614A (ja) 1983-03-31 1983-03-31 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59181614A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03151638A (ja) * 1989-11-08 1991-06-27 Nissan Motor Co Ltd 半導体集積回路の製造方法
CN1077725C (zh) * 1995-08-28 2002-01-09 现代电子产业株式会社 一种在半导体器件中形成精细接触孔的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772321A (en) * 1980-10-24 1982-05-06 Toshiba Corp Manufacture of seiconductor device
JPS57115861A (en) * 1981-01-10 1982-07-19 Mitsubishi Electric Corp Semiconductor memory device
JPS57115862A (en) * 1980-07-08 1982-07-19 Ibm Method of producing semiconductor memory device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57115862A (en) * 1980-07-08 1982-07-19 Ibm Method of producing semiconductor memory device
JPS5772321A (en) * 1980-10-24 1982-05-06 Toshiba Corp Manufacture of seiconductor device
JPS57115861A (en) * 1981-01-10 1982-07-19 Mitsubishi Electric Corp Semiconductor memory device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03151638A (ja) * 1989-11-08 1991-06-27 Nissan Motor Co Ltd 半導体集積回路の製造方法
CN1077725C (zh) * 1995-08-28 2002-01-09 现代电子产业株式会社 一种在半导体器件中形成精细接触孔的方法

Also Published As

Publication number Publication date
JPH0481323B2 (enrdf_load_stackoverflow) 1992-12-22

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