JPS59181614A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS59181614A JPS59181614A JP5595783A JP5595783A JPS59181614A JP S59181614 A JPS59181614 A JP S59181614A JP 5595783 A JP5595783 A JP 5595783A JP 5595783 A JP5595783 A JP 5595783A JP S59181614 A JPS59181614 A JP S59181614A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- contact hole
- forming
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 125000006850 spacer group Chemical group 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 29
- 238000009792 diffusion process Methods 0.000 claims description 21
- 238000001312 dry etching Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 20
- 229910052681 coesite Inorganic materials 0.000 abstract description 10
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 10
- 229910052682 stishovite Inorganic materials 0.000 abstract description 10
- 229910052905 tridymite Inorganic materials 0.000 abstract description 10
- 239000000377 silicon dioxide Substances 0.000 abstract description 9
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 9
- 230000010354 integration Effects 0.000 abstract description 3
- 238000007493 shaping process Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- WURBVZBTWMNKQT-UHFFFAOYSA-N 1-(4-chlorophenoxy)-3,3-dimethyl-1-(1,2,4-triazol-1-yl)butan-2-one Chemical compound C1=NC=NN1C(C(=O)C(C)(C)C)OC1=CC=C(Cl)C=C1 WURBVZBTWMNKQT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 235000013351 cheese Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5595783A JPS59181614A (ja) | 1983-03-31 | 1983-03-31 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5595783A JPS59181614A (ja) | 1983-03-31 | 1983-03-31 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59181614A true JPS59181614A (ja) | 1984-10-16 |
| JPH0481323B2 JPH0481323B2 (enrdf_load_stackoverflow) | 1992-12-22 |
Family
ID=13013553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5595783A Granted JPS59181614A (ja) | 1983-03-31 | 1983-03-31 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59181614A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03151638A (ja) * | 1989-11-08 | 1991-06-27 | Nissan Motor Co Ltd | 半導体集積回路の製造方法 |
| CN1077725C (zh) * | 1995-08-28 | 2002-01-09 | 现代电子产业株式会社 | 一种在半导体器件中形成精细接触孔的方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5772321A (en) * | 1980-10-24 | 1982-05-06 | Toshiba Corp | Manufacture of seiconductor device |
| JPS57115861A (en) * | 1981-01-10 | 1982-07-19 | Mitsubishi Electric Corp | Semiconductor memory device |
| JPS57115862A (en) * | 1980-07-08 | 1982-07-19 | Ibm | Method of producing semiconductor memory device |
-
1983
- 1983-03-31 JP JP5595783A patent/JPS59181614A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57115862A (en) * | 1980-07-08 | 1982-07-19 | Ibm | Method of producing semiconductor memory device |
| JPS5772321A (en) * | 1980-10-24 | 1982-05-06 | Toshiba Corp | Manufacture of seiconductor device |
| JPS57115861A (en) * | 1981-01-10 | 1982-07-19 | Mitsubishi Electric Corp | Semiconductor memory device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03151638A (ja) * | 1989-11-08 | 1991-06-27 | Nissan Motor Co Ltd | 半導体集積回路の製造方法 |
| CN1077725C (zh) * | 1995-08-28 | 2002-01-09 | 现代电子产业株式会社 | 一种在半导体器件中形成精细接触孔的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0481323B2 (enrdf_load_stackoverflow) | 1992-12-22 |
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