JPS59178776A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59178776A
JPS59178776A JP58052961A JP5296183A JPS59178776A JP S59178776 A JPS59178776 A JP S59178776A JP 58052961 A JP58052961 A JP 58052961A JP 5296183 A JP5296183 A JP 5296183A JP S59178776 A JPS59178776 A JP S59178776A
Authority
JP
Japan
Prior art keywords
layer
electrode
electron
electron supply
supply layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58052961A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6338870B2 (enExample
Inventor
Takashi Mimura
高志 三村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58052961A priority Critical patent/JPS59178776A/ja
Publication of JPS59178776A publication Critical patent/JPS59178776A/ja
Publication of JPS6338870B2 publication Critical patent/JPS6338870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58052961A 1983-03-29 1983-03-29 半導体装置 Granted JPS59178776A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58052961A JPS59178776A (ja) 1983-03-29 1983-03-29 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58052961A JPS59178776A (ja) 1983-03-29 1983-03-29 半導体装置

Publications (2)

Publication Number Publication Date
JPS59178776A true JPS59178776A (ja) 1984-10-11
JPS6338870B2 JPS6338870B2 (enExample) 1988-08-02

Family

ID=12929482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58052961A Granted JPS59178776A (ja) 1983-03-29 1983-03-29 半導体装置

Country Status (1)

Country Link
JP (1) JPS59178776A (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922367A (ja) * 1982-07-29 1984-02-04 Nec Corp 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922367A (ja) * 1982-07-29 1984-02-04 Nec Corp 半導体装置

Also Published As

Publication number Publication date
JPS6338870B2 (enExample) 1988-08-02

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