JPS59171188A - 半導体レ−ザ素子 - Google Patents

半導体レ−ザ素子

Info

Publication number
JPS59171188A
JPS59171188A JP192184A JP192184A JPS59171188A JP S59171188 A JPS59171188 A JP S59171188A JP 192184 A JP192184 A JP 192184A JP 192184 A JP192184 A JP 192184A JP S59171188 A JPS59171188 A JP S59171188A
Authority
JP
Japan
Prior art keywords
layer
light
laser device
semiconductor
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP192184A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6367350B2 (enrdf_load_stackoverflow
Inventor
Shigeo Yamashita
茂雄 山下
Kunio Aiki
相木　国男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP192184A priority Critical patent/JPS59171188A/ja
Publication of JPS59171188A publication Critical patent/JPS59171188A/ja
Publication of JPS6367350B2 publication Critical patent/JPS6367350B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)
JP192184A 1984-01-11 1984-01-11 半導体レ−ザ素子 Granted JPS59171188A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP192184A JPS59171188A (ja) 1984-01-11 1984-01-11 半導体レ−ザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP192184A JPS59171188A (ja) 1984-01-11 1984-01-11 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS59171188A true JPS59171188A (ja) 1984-09-27
JPS6367350B2 JPS6367350B2 (enrdf_load_stackoverflow) 1988-12-26

Family

ID=11515054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP192184A Granted JPS59171188A (ja) 1984-01-11 1984-01-11 半導体レ−ザ素子

Country Status (1)

Country Link
JP (1) JPS59171188A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6372173A (ja) * 1986-09-16 1988-04-01 Hitachi Ltd 半導体レ−ザ装置
JPH08279652A (ja) * 1996-05-31 1996-10-22 Hitachi Ltd 半導体レーザ装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE9114367U1 (de) * 1991-11-18 1992-03-12 Wissmann, Eberhard, 7450 Hechingen Rückwärts-Einparkhilfe

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228281A (en) * 1975-08-28 1977-03-03 Fujitsu Ltd Light emitting semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228281A (en) * 1975-08-28 1977-03-03 Fujitsu Ltd Light emitting semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6372173A (ja) * 1986-09-16 1988-04-01 Hitachi Ltd 半導体レ−ザ装置
US4800565A (en) * 1986-09-16 1989-01-24 Hitachi, Ltd. Semiconductor laser device having high optical intensity and reliability
JPH08279652A (ja) * 1996-05-31 1996-10-22 Hitachi Ltd 半導体レーザ装置

Also Published As

Publication number Publication date
JPS6367350B2 (enrdf_load_stackoverflow) 1988-12-26

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