JPS59170274A - 炭化チタン表面の化学的−機械的研摩方法 - Google Patents
炭化チタン表面の化学的−機械的研摩方法Info
- Publication number
- JPS59170274A JPS59170274A JP58224562A JP22456283A JPS59170274A JP S59170274 A JPS59170274 A JP S59170274A JP 58224562 A JP58224562 A JP 58224562A JP 22456283 A JP22456283 A JP 22456283A JP S59170274 A JPS59170274 A JP S59170274A
- Authority
- JP
- Japan
- Prior art keywords
- titanium carbide
- polishing
- slurry
- chemical
- aluminum oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 title claims description 35
- 238000000034 method Methods 0.000 title claims description 16
- 238000005299 abrasion Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 claims description 25
- 239000002002 slurry Substances 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 15
- 239000000377 silicon dioxide Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- ing And Chemical Polishing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/473,938 US4435247A (en) | 1983-03-10 | 1983-03-10 | Method for polishing titanium carbide |
| US473938 | 1983-03-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59170274A true JPS59170274A (ja) | 1984-09-26 |
| JPS6219512B2 JPS6219512B2 (enExample) | 1987-04-28 |
Family
ID=23881617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58224562A Granted JPS59170274A (ja) | 1983-03-10 | 1983-11-30 | 炭化チタン表面の化学的−機械的研摩方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4435247A (enExample) |
| EP (1) | EP0121706B1 (enExample) |
| JP (1) | JPS59170274A (enExample) |
| DE (1) | DE3473845D1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4702792A (en) * | 1985-10-28 | 1987-10-27 | International Business Machines Corporation | Method of forming fine conductive lines, patterns and connectors |
| JPH01187930A (ja) * | 1988-01-22 | 1989-07-27 | Nippon Telegr & Teleph Corp <Ntt> | 研磨剤及び研磨方法 |
| JPH02190258A (ja) * | 1989-01-20 | 1990-07-26 | Nkk Corp | チタン板の両面研磨方法 |
| US5891352A (en) | 1993-09-16 | 1999-04-06 | Luxtron Corporation | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
| US5441598A (en) * | 1993-12-16 | 1995-08-15 | Motorola, Inc. | Polishing pad for chemical-mechanical polishing of a semiconductor substrate |
| JP2738291B2 (ja) * | 1994-02-14 | 1998-04-08 | 日本電気株式会社 | 機械・化学研磨方法および研磨装置 |
| US5733175A (en) * | 1994-04-25 | 1998-03-31 | Leach; Michael A. | Polishing a workpiece using equal velocity at all points overlapping a polisher |
| US5783497A (en) * | 1994-08-02 | 1998-07-21 | Sematech, Inc. | Forced-flow wafer polisher |
| US5562530A (en) * | 1994-08-02 | 1996-10-08 | Sematech, Inc. | Pulsed-force chemical mechanical polishing |
| US5607341A (en) * | 1994-08-08 | 1997-03-04 | Leach; Michael A. | Method and structure for polishing a wafer during manufacture of integrated circuits |
| US5695384A (en) * | 1994-12-07 | 1997-12-09 | Texas Instruments Incorporated | Chemical-mechanical polishing salt slurry |
| US5681215A (en) * | 1995-10-27 | 1997-10-28 | Applied Materials, Inc. | Carrier head design for a chemical mechanical polishing apparatus |
| US6024630A (en) * | 1995-06-09 | 2000-02-15 | Applied Materials, Inc. | Fluid-pressure regulated wafer polishing head |
| US5708506A (en) * | 1995-07-03 | 1998-01-13 | Applied Materials, Inc. | Apparatus and method for detecting surface roughness in a chemical polishing pad conditioning process |
| US5762544A (en) * | 1995-10-27 | 1998-06-09 | Applied Materials, Inc. | Carrier head design for a chemical mechanical polishing apparatus |
| US5709593A (en) | 1995-10-27 | 1998-01-20 | Applied Materials, Inc. | Apparatus and method for distribution of slurry in a chemical mechanical polishing system |
| FR2761629B1 (fr) * | 1997-04-07 | 1999-06-18 | Hoechst France | Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope |
| US6019665A (en) * | 1998-04-30 | 2000-02-01 | Fujitsu Limited | Controlled retention of slurry in chemical mechanical polishing |
| US6066030A (en) * | 1999-03-04 | 2000-05-23 | International Business Machines Corporation | Electroetch and chemical mechanical polishing equipment |
| JP2001121407A (ja) * | 1999-10-21 | 2001-05-08 | Nec Corp | 研磨装置 |
| FR2819245B1 (fr) * | 2001-01-09 | 2004-11-26 | Clariant | Nouvelles suspensions aqueuses de silice colloidale anionique de ph neutre et leur procede de preparation, et leurs applications |
| US6910948B2 (en) * | 2001-09-27 | 2005-06-28 | Nsk Ltd. | Needle bearing and method for grinding bearing parts thereof |
| DE10229047A1 (de) * | 2002-06-28 | 2004-01-29 | Clariant International Limited | Verwendung kolloidaler anionischer Kieselsole als Klärungsmittel |
| US11077536B2 (en) | 2016-06-24 | 2021-08-03 | Applied Materials, Inc. | Slurry distribution device for chemical mechanical polishing |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3053646A (en) * | 1960-07-15 | 1962-09-11 | Dow Chemical Co | Grinding and polishing compositions and method of making same |
| US3615955A (en) | 1969-02-28 | 1971-10-26 | Ibm | Method for polishing a silicon surface |
| US3906678A (en) * | 1972-09-14 | 1975-09-23 | Buehler Ltd | Automatic specimen polishing machine and method |
| US3869323A (en) | 1973-12-28 | 1975-03-04 | Ibm | Method of polishing zinc selenide |
| US3869324A (en) | 1973-12-28 | 1975-03-04 | Ibm | Method of polishing cadmium telluride |
| US3931696A (en) * | 1974-03-04 | 1976-01-13 | Veb Rathenower Optische Werke | Device for making sections for specimens and specimen supports therefor |
| US4011099A (en) | 1975-11-07 | 1977-03-08 | Monsanto Company | Preparation of damage-free surface on alpha-alumina |
| US4057939A (en) | 1975-12-05 | 1977-11-15 | International Business Machines Corporation | Silicon wafer polishing |
| US4130847A (en) | 1977-03-31 | 1978-12-19 | International Business Machines Corporation | Corrosion resistant thin film head assembly and method for making |
| US4251841A (en) | 1979-06-01 | 1981-02-17 | International Business Machines Corporation | Magnetic head slider assembly |
-
1983
- 1983-03-10 US US06/473,938 patent/US4435247A/en not_active Expired - Lifetime
- 1983-11-30 JP JP58224562A patent/JPS59170274A/ja active Granted
-
1984
- 1984-02-22 EP EP84101833A patent/EP0121706B1/en not_active Expired
- 1984-02-22 DE DE8484101833T patent/DE3473845D1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4435247A (en) | 1984-03-06 |
| EP0121706A3 (en) | 1985-09-18 |
| EP0121706B1 (en) | 1988-09-07 |
| JPS6219512B2 (enExample) | 1987-04-28 |
| EP0121706A2 (en) | 1984-10-17 |
| DE3473845D1 (en) | 1988-10-13 |
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