JPS59167056A - シリコン半導体電極 - Google Patents

シリコン半導体電極

Info

Publication number
JPS59167056A
JPS59167056A JP58040040A JP4004083A JPS59167056A JP S59167056 A JPS59167056 A JP S59167056A JP 58040040 A JP58040040 A JP 58040040A JP 4004083 A JP4004083 A JP 4004083A JP S59167056 A JPS59167056 A JP S59167056A
Authority
JP
Japan
Prior art keywords
layer
conductive paste
silicon
electrode
silver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58040040A
Other languages
English (en)
Japanese (ja)
Other versions
JPS646534B2 (enExample
Inventor
Noboru Kosho
古庄　昇
Tomoyuki Kawashima
河島　朋之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58040040A priority Critical patent/JPS59167056A/ja
Publication of JPS59167056A publication Critical patent/JPS59167056A/ja
Publication of JPS646534B2 publication Critical patent/JPS646534B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
JP58040040A 1983-03-12 1983-03-12 シリコン半導体電極 Granted JPS59167056A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58040040A JPS59167056A (ja) 1983-03-12 1983-03-12 シリコン半導体電極

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58040040A JPS59167056A (ja) 1983-03-12 1983-03-12 シリコン半導体電極

Publications (2)

Publication Number Publication Date
JPS59167056A true JPS59167056A (ja) 1984-09-20
JPS646534B2 JPS646534B2 (enExample) 1989-02-03

Family

ID=12569794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58040040A Granted JPS59167056A (ja) 1983-03-12 1983-03-12 シリコン半導体電極

Country Status (1)

Country Link
JP (1) JPS59167056A (enExample)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62296478A (ja) * 1986-06-16 1987-12-23 Matsushita Electric Ind Co Ltd 非晶質太陽電池
JPS63194372A (ja) * 1987-02-09 1988-08-11 Fuji Electric Co Ltd 非晶質光電変換装置
JPS6457762A (en) * 1987-08-28 1989-03-06 Kyocera Corp Photoelectric converting device
JPH01124270A (ja) * 1987-11-09 1989-05-17 Fuji Electric Co Ltd 薄膜太陽電池の製造方法
JPH01166574A (ja) * 1987-12-22 1989-06-30 Fuji Electric Co Ltd 薄膜太陽電池の製造方法
JPH01116465U (enExample) * 1988-01-30 1989-08-07
JPH0254972A (ja) * 1988-08-19 1990-02-23 Sanyo Electric Co Ltd 光起電力装置
US4968354A (en) * 1987-11-09 1990-11-06 Fuji Electric Co., Ltd. Thin film solar cell array
US5318638A (en) * 1991-10-18 1994-06-07 Canon Kabushiki Kaisha Solar cell
US6051778A (en) * 1996-12-13 2000-04-18 Canon Kabushiki Kaisha Electrode structure, process production thereof and photo-electricity generating device including the electrode
JP2006319170A (ja) * 2005-05-13 2006-11-24 Mitsubishi Electric Corp 太陽電池及びその製造方法
JP2007234884A (ja) * 2006-03-01 2007-09-13 Mitsubishi Electric Corp 太陽電池及びその製造方法
WO2008018265A1 (fr) * 2006-08-09 2008-02-14 Shin-Etsu Handotai Co., Ltd. Substrat semi-conducteur, procédé de réalisation d'une électrode, et procédé de fabrication d'une cellule solaire
WO2008026415A1 (fr) * 2006-08-31 2008-03-06 Shin-Etsu Handotai Co., Ltd. Procédé permettant de former un substrat semi-conducteur et une électrode et procédé de fabrication d'une batterie solaire
WO2009035112A1 (ja) * 2007-09-12 2009-03-19 Mitsubishi Materials Corporation スーパーストレート型太陽電池用の複合膜及びその製造方法、並びにサブストレート型太陽電池用の複合膜及びその製造方法
JP2016063069A (ja) * 2014-09-18 2016-04-25 国立研究開発法人産業技術総合研究所 半導体装置とその製造方法

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62296478A (ja) * 1986-06-16 1987-12-23 Matsushita Electric Ind Co Ltd 非晶質太陽電池
JPS63194372A (ja) * 1987-02-09 1988-08-11 Fuji Electric Co Ltd 非晶質光電変換装置
JPS6457762A (en) * 1987-08-28 1989-03-06 Kyocera Corp Photoelectric converting device
JPH01124270A (ja) * 1987-11-09 1989-05-17 Fuji Electric Co Ltd 薄膜太陽電池の製造方法
US4968354A (en) * 1987-11-09 1990-11-06 Fuji Electric Co., Ltd. Thin film solar cell array
JPH01166574A (ja) * 1987-12-22 1989-06-30 Fuji Electric Co Ltd 薄膜太陽電池の製造方法
JPH01116465U (enExample) * 1988-01-30 1989-08-07
JPH0254972A (ja) * 1988-08-19 1990-02-23 Sanyo Electric Co Ltd 光起電力装置
US5318638A (en) * 1991-10-18 1994-06-07 Canon Kabushiki Kaisha Solar cell
US5393695A (en) * 1991-10-18 1995-02-28 Canon Kabushiki Kaisha Method of making solar cell
US6051778A (en) * 1996-12-13 2000-04-18 Canon Kabushiki Kaisha Electrode structure, process production thereof and photo-electricity generating device including the electrode
JP2006319170A (ja) * 2005-05-13 2006-11-24 Mitsubishi Electric Corp 太陽電池及びその製造方法
JP2007234884A (ja) * 2006-03-01 2007-09-13 Mitsubishi Electric Corp 太陽電池及びその製造方法
WO2008018265A1 (fr) * 2006-08-09 2008-02-14 Shin-Etsu Handotai Co., Ltd. Substrat semi-conducteur, procédé de réalisation d'une électrode, et procédé de fabrication d'une cellule solaire
JP2008042095A (ja) * 2006-08-09 2008-02-21 Shin Etsu Handotai Co Ltd 半導体基板並びに電極の形成方法及び太陽電池の製造方法
KR101367740B1 (ko) * 2006-08-09 2014-02-27 신에쓰 가가꾸 고교 가부시끼가이샤 반도체 기판과 전극의 형성 방법 및 태양 전지의 제조 방법
AU2007282721B2 (en) * 2006-08-09 2013-01-24 Shin-Etsu Chemical Co., Ltd. Semiconductor substrate, method for forming electrode, and method for manufacturing solar cell
US8319096B2 (en) 2006-08-09 2012-11-27 Shin-Etsu Handotai Co., Ltd. Semiconductor substrate, method for forming electrode, and method for fabricating solar cell
AU2007289892B2 (en) * 2006-08-31 2012-09-27 Shin-Etsu Chemical Co., Ltd. Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery
US8253011B2 (en) 2006-08-31 2012-08-28 Shin-Etsu Handotai Co., Ltd. Semiconductor substrate, electrode forming method, and solar cell fabricating method
JPWO2008026415A1 (ja) * 2006-08-31 2010-01-14 信越半導体株式会社 半導体基板並びに電極の形成方法及び太陽電池の製造方法
JP5118044B2 (ja) * 2006-08-31 2013-01-16 信越半導体株式会社 半導体基板並びに電極の形成方法及び太陽電池の製造方法
WO2008026415A1 (fr) * 2006-08-31 2008-03-06 Shin-Etsu Handotai Co., Ltd. Procédé permettant de former un substrat semi-conducteur et une électrode et procédé de fabrication d'une batterie solaire
US8766089B2 (en) 2006-08-31 2014-07-01 Shin-Etsu Handotai Co., Ltd. Semiconductor substrate, electrode forming method, and solar cell fabricating method
WO2009035112A1 (ja) * 2007-09-12 2009-03-19 Mitsubishi Materials Corporation スーパーストレート型太陽電池用の複合膜及びその製造方法、並びにサブストレート型太陽電池用の複合膜及びその製造方法
US8921688B2 (en) 2007-09-12 2014-12-30 Mitsubishi Materials Corporation Composite film for superstrate solar cell having conductive film and electroconductive reflective film formed by applying composition containing metal nanoparticles and comprising air pores of preset diameter in contact surface
JP2016063069A (ja) * 2014-09-18 2016-04-25 国立研究開発法人産業技術総合研究所 半導体装置とその製造方法

Also Published As

Publication number Publication date
JPS646534B2 (enExample) 1989-02-03

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