JPS59167013A - プラズマｃｖｄ装置 - Google Patents
プラズマｃｖｄ装置Info
- Publication number
- JPS59167013A JPS59167013A JP58040044A JP4004483A JPS59167013A JP S59167013 A JPS59167013 A JP S59167013A JP 58040044 A JP58040044 A JP 58040044A JP 4004483 A JP4004483 A JP 4004483A JP S59167013 A JPS59167013 A JP S59167013A
- Authority
- JP
- Japan
- Prior art keywords
- tray
- heater
- substrates
- substrate
- sides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 3
- 239000007795 chemical reaction product Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58040044A JPS59167013A (ja) | 1983-03-12 | 1983-03-12 | プラズマｃｖｄ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58040044A JPS59167013A (ja) | 1983-03-12 | 1983-03-12 | プラズマｃｖｄ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59167013A true JPS59167013A (ja) | 1984-09-20 |
| JPH0436453B2 JPH0436453B2 (enrdf_load_stackoverflow) | 1992-06-16 |
Family
ID=12569910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58040044A Granted JPS59167013A (ja) | 1983-03-12 | 1983-03-12 | プラズマｃｖｄ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59167013A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6267075B1 (en) * | 1998-07-09 | 2001-07-31 | Yield Engineering Systems, Inc. | Apparatus for cleaning items using gas plasma |
| JP2010518604A (ja) * | 2007-02-01 | 2010-05-27 | ウィラード アンド ケルシー ソーラー グループ， エルエルシー | ガラスシートの半導体コーティングシステムおよび方法および得られる製品 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5578524A (en) * | 1978-12-10 | 1980-06-13 | Shunpei Yamazaki | Manufacture of semiconductor device |
| JPS5681923A (en) * | 1979-12-06 | 1981-07-04 | Sumitomo Electric Ind Ltd | Manufacture of thin film |
| JPS5742118A (en) * | 1980-08-27 | 1982-03-09 | Mitsubishi Electric Corp | Plasma cvd device |
-
1983
- 1983-03-12 JP JP58040044A patent/JPS59167013A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5578524A (en) * | 1978-12-10 | 1980-06-13 | Shunpei Yamazaki | Manufacture of semiconductor device |
| JPS5681923A (en) * | 1979-12-06 | 1981-07-04 | Sumitomo Electric Ind Ltd | Manufacture of thin film |
| JPS5742118A (en) * | 1980-08-27 | 1982-03-09 | Mitsubishi Electric Corp | Plasma cvd device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6267075B1 (en) * | 1998-07-09 | 2001-07-31 | Yield Engineering Systems, Inc. | Apparatus for cleaning items using gas plasma |
| JP2010518604A (ja) * | 2007-02-01 | 2010-05-27 | ウィラード アンド ケルシー ソーラー グループ， エルエルシー | ガラスシートの半導体コーティングシステムおよび方法および得られる製品 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0436453B2 (enrdf_load_stackoverflow) | 1992-06-16 |
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