JPS59165487A - 半導体レ−ザアレイ素子 - Google Patents

半導体レ−ザアレイ素子

Info

Publication number
JPS59165487A
JPS59165487A JP58040342A JP4034283A JPS59165487A JP S59165487 A JPS59165487 A JP S59165487A JP 58040342 A JP58040342 A JP 58040342A JP 4034283 A JP4034283 A JP 4034283A JP S59165487 A JPS59165487 A JP S59165487A
Authority
JP
Japan
Prior art keywords
layer
slots
semiconductor laser
substrate
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58040342A
Other languages
English (en)
Japanese (ja)
Other versions
JPH046113B2 (cg-RX-API-DMAC7.html
Inventor
Saburo Yamamoto
三郎 山本
Hiroshi Hayashi
寛 林
Shinji Kaneiwa
進治 兼岩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP58040342A priority Critical patent/JPS59165487A/ja
Publication of JPS59165487A publication Critical patent/JPS59165487A/ja
Publication of JPH046113B2 publication Critical patent/JPH046113B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP58040342A 1983-03-09 1983-03-09 半導体レ−ザアレイ素子 Granted JPS59165487A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58040342A JPS59165487A (ja) 1983-03-09 1983-03-09 半導体レ−ザアレイ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58040342A JPS59165487A (ja) 1983-03-09 1983-03-09 半導体レ−ザアレイ素子

Publications (2)

Publication Number Publication Date
JPS59165487A true JPS59165487A (ja) 1984-09-18
JPH046113B2 JPH046113B2 (cg-RX-API-DMAC7.html) 1992-02-04

Family

ID=12577954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58040342A Granted JPS59165487A (ja) 1983-03-09 1983-03-09 半導体レ−ザアレイ素子

Country Status (1)

Country Link
JP (1) JPS59165487A (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4899359A (en) * 1985-06-14 1990-02-06 Sharp Kabushiki Kaisha Optical memory semiconductor laser apparatus
JPH03152250A (ja) * 1989-11-03 1991-06-28 Lonati Spa ダブルシリンダ型円形編機でストッキングに模様を形成する方法と装置
EP0560358A3 (en) * 1992-03-11 1994-05-18 Sumitomo Electric Industries Semiconductor laser and process for fabricating the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139983A (en) * 1981-02-24 1982-08-30 Nec Corp Buried double heterojunction laser element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139983A (en) * 1981-02-24 1982-08-30 Nec Corp Buried double heterojunction laser element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4899359A (en) * 1985-06-14 1990-02-06 Sharp Kabushiki Kaisha Optical memory semiconductor laser apparatus
JPH03152250A (ja) * 1989-11-03 1991-06-28 Lonati Spa ダブルシリンダ型円形編機でストッキングに模様を形成する方法と装置
EP0560358A3 (en) * 1992-03-11 1994-05-18 Sumitomo Electric Industries Semiconductor laser and process for fabricating the same

Also Published As

Publication number Publication date
JPH046113B2 (cg-RX-API-DMAC7.html) 1992-02-04

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