JPS5916420B2 - 電界効果半導体装置の製造方法 - Google Patents

電界効果半導体装置の製造方法

Info

Publication number
JPS5916420B2
JPS5916420B2 JP742494A JP249474A JPS5916420B2 JP S5916420 B2 JPS5916420 B2 JP S5916420B2 JP 742494 A JP742494 A JP 742494A JP 249474 A JP249474 A JP 249474A JP S5916420 B2 JPS5916420 B2 JP S5916420B2
Authority
JP
Japan
Prior art keywords
field effect
drain
semiconductor device
source
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP742494A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5099477A (enrdf_load_stackoverflow
Inventor
市右エ門 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP742494A priority Critical patent/JPS5916420B2/ja
Publication of JPS5099477A publication Critical patent/JPS5099477A/ja
Publication of JPS5916420B2 publication Critical patent/JPS5916420B2/ja
Expired legal-status Critical Current

Links

JP742494A 1973-12-28 1973-12-28 電界効果半導体装置の製造方法 Expired JPS5916420B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP742494A JPS5916420B2 (ja) 1973-12-28 1973-12-28 電界効果半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP742494A JPS5916420B2 (ja) 1973-12-28 1973-12-28 電界効果半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5099477A JPS5099477A (enrdf_load_stackoverflow) 1975-08-07
JPS5916420B2 true JPS5916420B2 (ja) 1984-04-16

Family

ID=11530897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP742494A Expired JPS5916420B2 (ja) 1973-12-28 1973-12-28 電界効果半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5916420B2 (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4968681A (enrdf_load_stackoverflow) * 1972-11-06 1974-07-03

Also Published As

Publication number Publication date
JPS5099477A (enrdf_load_stackoverflow) 1975-08-07

Similar Documents

Publication Publication Date Title
US4110899A (en) Method for manufacturing complementary insulated gate field effect transistors
US4395726A (en) Semiconductor device of silicon on sapphire structure having FETs with different thickness polycrystalline silicon films
US4562638A (en) Method for the simultaneous manufacture of fast short channel and voltage-stable MOS transistors in VLSI circuits
US4135955A (en) Process for fabricating high voltage cmos with self-aligned guard rings utilizing selective diffusion and local oxidation
KR960036093A (ko) 플래쉬 이이피롬 셀 및 그 제조방법
JPS61263274A (ja) 半導体装置の製造方法
JPH0222862A (ja) 半導体装置の製造方法
JPS5916420B2 (ja) 電界効果半導体装置の製造方法
JPH08293598A (ja) 半導体装置とその製造方法
JPS57107067A (en) Manufacture of semiconductor device
JP2611363B2 (ja) 絶縁ゲート電界効果トランジスタおよびその製造方法
JPH0612826B2 (ja) 薄膜トランジスタの製造方法
KR0146528B1 (ko) 반도체 소자의 제조방법
JPS62265765A (ja) 半導体装置の製造方法
JPS63275179A (ja) Ｍｉｓ型半導体集積回路装置
JPS63128626A (ja) 半導体集積回路装置のコンタクト形成方法
JP3041860B2 (ja) Ｍｉｓ型トランジスタの製造方法
JPH04263468A (ja) 半導体装置の製造方法
JPH04188762A (ja) 半導体装置の製造方法
JP2610906B2 (ja) ＢｉＭＯＳ半導体回路装置の製造方法
KR910005396B1 (ko) 서로 다른 동작영역을 갖는 모스트랜지스터의 제조방법
KR19980058454A (ko) 반도체 소자의 제조방법
KR930008534B1 (ko) 듀얼게이트 트랜지스터 제조방법
JPS61287160A (ja) Ｍｏｓ型半導体装置の製造方法
JPS6260254A (ja) 半導体装置の製造方法