JPS59162200A - シリコン基板表面の清浄化法 - Google Patents

シリコン基板表面の清浄化法

Info

Publication number
JPS59162200A
JPS59162200A JP3376983A JP3376983A JPS59162200A JP S59162200 A JPS59162200 A JP S59162200A JP 3376983 A JP3376983 A JP 3376983A JP 3376983 A JP3376983 A JP 3376983A JP S59162200 A JPS59162200 A JP S59162200A
Authority
JP
Japan
Prior art keywords
substrate
oxide film
remove
vacuum
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3376983A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6221756B2 (cg-RX-API-DMAC7.html
Inventor
Akitoshi Ishizaka
彰利 石坂
Yasuhiro Shiraki
靖寛 白木
Eiichi Maruyama
丸山　暎一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP3376983A priority Critical patent/JPS59162200A/ja
Publication of JPS59162200A publication Critical patent/JPS59162200A/ja
Publication of JPS6221756B2 publication Critical patent/JPS6221756B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP3376983A 1983-03-03 1983-03-03 シリコン基板表面の清浄化法 Granted JPS59162200A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3376983A JPS59162200A (ja) 1983-03-03 1983-03-03 シリコン基板表面の清浄化法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3376983A JPS59162200A (ja) 1983-03-03 1983-03-03 シリコン基板表面の清浄化法

Publications (2)

Publication Number Publication Date
JPS59162200A true JPS59162200A (ja) 1984-09-13
JPS6221756B2 JPS6221756B2 (cg-RX-API-DMAC7.html) 1987-05-14

Family

ID=12395651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3376983A Granted JPS59162200A (ja) 1983-03-03 1983-03-03 シリコン基板表面の清浄化法

Country Status (1)

Country Link
JP (1) JPS59162200A (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03201427A (ja) * 1989-12-28 1991-09-03 Nec Corp 半導体薄膜の形成方法
JPH03106737U (cg-RX-API-DMAC7.html) * 1990-02-20 1991-11-05
US5817174A (en) * 1995-12-15 1998-10-06 Kabushiki Kaisha Toshiba Semiconductor substrate and method of treating semiconductor substrate
WO1999050895A1 (en) * 1998-03-27 1999-10-07 Super Silicon Crystal Research Institute Corp. Method of manufacturing semiconductor wafer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03201427A (ja) * 1989-12-28 1991-09-03 Nec Corp 半導体薄膜の形成方法
JPH03106737U (cg-RX-API-DMAC7.html) * 1990-02-20 1991-11-05
US5817174A (en) * 1995-12-15 1998-10-06 Kabushiki Kaisha Toshiba Semiconductor substrate and method of treating semiconductor substrate
US6010797A (en) * 1995-12-15 2000-01-04 Kabushiki Kaisha Toshiba Semiconductor substrate and method of treating semiconductor substrate
WO1999050895A1 (en) * 1998-03-27 1999-10-07 Super Silicon Crystal Research Institute Corp. Method of manufacturing semiconductor wafer
US6323140B1 (en) 1998-03-27 2001-11-27 Silicon Crystal Research Institute Corp. Method of manufacturing semiconductor wafer

Also Published As

Publication number Publication date
JPS6221756B2 (cg-RX-API-DMAC7.html) 1987-05-14

Similar Documents

Publication Publication Date Title
JP3086719B2 (ja) 表面処理方法
KR100220926B1 (ko) 소수성 실리콘 웨이퍼의 세정방법
EP0536747B1 (en) Process for using halogenated carboxylic acid cleaning agents for fabricating integrated circuits
US5332444A (en) Gas phase cleaning agents for removing metal containing contaminants from integrated circuit assemblies and a process for using the same
JP3324455B2 (ja) 珪素系半導体基板の清浄化方法
JPS61270830A (ja) 表面清浄化方法
JPH0496226A (ja) 半導体装置の製造方法
GB2376797A (en) Stable, oxide-free silicon surface preparation
JPH02260531A (ja) シリコン表面の処理方法
JP4325095B2 (ja) ＳｉＣ素子の製造方法
JPS6221756B2 (cg-RX-API-DMAC7.html)
JP2595935B2 (ja) 表面清浄化方法
JP2558273B2 (ja) 表面クリ−ニング方法
US6323140B1 (en) Method of manufacturing semiconductor wafer
JP2970236B2 (ja) ＧａＡｓウェハ及びその製造方法
JPH07211688A (ja) 化合物半導体基板の製造方法
JPS60147123A (ja) 半導体装置の製造方法
Kim et al. Ex situ wafer surface cleaning by HF dipping for low temperature silicon epitaxy
JPH09190994A (ja) ケイ酸残留物の生成を防止のためのフッ酸処理後の脱イオン水／オゾン洗浄
JPS60152021A (ja) ニツケルシリサイド表面の汚染防止法
JPH0669087A (ja) シリコン基板の形成方法
JP2637950B2 (ja) 表面清浄化方法
JPH06151304A (ja) 化合物半導体ウェーハ
JPS63160324A (ja) 分子線エピタキシヤル結晶成長方法
JPH0481857B2 (cg-RX-API-DMAC7.html)