JPS59159984A - ドライエッチング装置 - Google Patents
ドライエッチング装置Info
- Publication number
- JPS59159984A JPS59159984A JP3540283A JP3540283A JPS59159984A JP S59159984 A JPS59159984 A JP S59159984A JP 3540283 A JP3540283 A JP 3540283A JP 3540283 A JP3540283 A JP 3540283A JP S59159984 A JPS59159984 A JP S59159984A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- dry etching
- vacuum
- film
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 27
- 238000000295 emission spectrum Methods 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 abstract description 24
- 239000000758 substrate Substances 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 6
- 230000003247 decreasing effect Effects 0.000 abstract description 3
- 238000010183 spectrum analysis Methods 0.000 abstract description 2
- 238000007788 roughening Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001675 atomic spectrum Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3540283A JPS59159984A (ja) | 1983-03-03 | 1983-03-03 | ドライエッチング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3540283A JPS59159984A (ja) | 1983-03-03 | 1983-03-03 | ドライエッチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59159984A true JPS59159984A (ja) | 1984-09-10 |
| JPH0549756B2 JPH0549756B2 (enrdf_load_stackoverflow) | 1993-07-27 |
Family
ID=12440912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3540283A Granted JPS59159984A (ja) | 1983-03-03 | 1983-03-03 | ドライエッチング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59159984A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63274147A (ja) * | 1987-05-06 | 1988-11-11 | Hitachi Ltd | ドライエッチング方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5534228A (en) * | 1978-09-01 | 1980-03-10 | Toray Silicone Co Ltd | Polysiloxane composition |
| JPS56129325A (en) * | 1980-03-14 | 1981-10-09 | Fujitsu Ltd | Dry etching |
-
1983
- 1983-03-03 JP JP3540283A patent/JPS59159984A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5534228A (en) * | 1978-09-01 | 1980-03-10 | Toray Silicone Co Ltd | Polysiloxane composition |
| JPS56129325A (en) * | 1980-03-14 | 1981-10-09 | Fujitsu Ltd | Dry etching |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63274147A (ja) * | 1987-05-06 | 1988-11-11 | Hitachi Ltd | ドライエッチング方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0549756B2 (enrdf_load_stackoverflow) | 1993-07-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR900000613B1 (ko) | 에칭 모니터 방법 및 장치 | |
| EP1007762B1 (en) | Method and apparatus for detecting the endpoint of a chamber cleaning | |
| US4328068A (en) | Method for end point detection in a plasma etching process | |
| JP4567828B2 (ja) | 終点検出方法 | |
| JPS59159984A (ja) | ドライエッチング装置 | |
| JP3333657B2 (ja) | 気相エッチング装置及び気相エッチング方法 | |
| US6267121B1 (en) | Process to season and determine condition of a high density plasma etcher | |
| JP2002110642A (ja) | プラズマ処理方法 | |
| JPH0896988A (ja) | プラズマモニタ装置およびプラズマモニタ方法 | |
| JPH09209179A (ja) | ドライエッチング装置およびそのクリーニング方法 | |
| JP2006073751A (ja) | プラズマクリーニング処理の終点検出方法及び終点検出装置 | |
| JPH05102089A (ja) | ドライエツチング方法 | |
| JPH07240405A (ja) | エッチング終点検出方法 | |
| US5718796A (en) | Dry etching system | |
| JP2906752B2 (ja) | ドライエッチング方法 | |
| JP2000200772A (ja) | プラズマ処理方法 | |
| JP3231560B2 (ja) | プラズマエッチング装置 | |
| JP2005019763A (ja) | ドライエッチング装置 | |
| JPH07130708A (ja) | エッチング終点検出機構 | |
| JPH07201832A (ja) | 半導体製造装置 | |
| JPH0343775B2 (enrdf_load_stackoverflow) | ||
| JP2002151475A (ja) | 薄膜処理モニタリング方法と薄膜処理装置 | |
| JPH0766173A (ja) | プラズマ処理方法 | |
| JP3609241B2 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
| JPS638187B2 (enrdf_load_stackoverflow) |