JPS59159984A - ドライエッチング装置 - Google Patents

ドライエッチング装置

Info

Publication number
JPS59159984A
JPS59159984A JP58035402A JP3540283A JPS59159984A JP S59159984 A JPS59159984 A JP S59159984A JP 58035402 A JP58035402 A JP 58035402A JP 3540283 A JP3540283 A JP 3540283A JP S59159984 A JPS59159984 A JP S59159984A
Authority
JP
Japan
Prior art keywords
dry etching
etching
vacuum
film
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58035402A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0549756B2 (enrdf_load_stackoverflow
Inventor
Toshimichi Ishida
敏道 石田
Masuo Tanno
丹野　益男
Yuichiro Yamada
雄一郎 山田
Shinichi Mizuguchi
水口　信一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58035402A priority Critical patent/JPS59159984A/ja
Publication of JPS59159984A publication Critical patent/JPS59159984A/ja
Publication of JPH0549756B2 publication Critical patent/JPH0549756B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP58035402A 1983-03-03 1983-03-03 ドライエッチング装置 Granted JPS59159984A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58035402A JPS59159984A (ja) 1983-03-03 1983-03-03 ドライエッチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58035402A JPS59159984A (ja) 1983-03-03 1983-03-03 ドライエッチング装置

Publications (2)

Publication Number Publication Date
JPS59159984A true JPS59159984A (ja) 1984-09-10
JPH0549756B2 JPH0549756B2 (enrdf_load_stackoverflow) 1993-07-27

Family

ID=12440912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58035402A Granted JPS59159984A (ja) 1983-03-03 1983-03-03 ドライエッチング装置

Country Status (1)

Country Link
JP (1) JPS59159984A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63274147A (ja) * 1987-05-06 1988-11-11 Hitachi Ltd ドライエッチング方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534228A (en) * 1978-09-01 1980-03-10 Toray Silicone Co Ltd Polysiloxane composition
JPS56129325A (en) * 1980-03-14 1981-10-09 Fujitsu Ltd Dry etching

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534228A (en) * 1978-09-01 1980-03-10 Toray Silicone Co Ltd Polysiloxane composition
JPS56129325A (en) * 1980-03-14 1981-10-09 Fujitsu Ltd Dry etching

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63274147A (ja) * 1987-05-06 1988-11-11 Hitachi Ltd ドライエッチング方法

Also Published As

Publication number Publication date
JPH0549756B2 (enrdf_load_stackoverflow) 1993-07-27

Similar Documents

Publication Publication Date Title
KR900000613B1 (ko) 에칭 모니터 방법 및 장치
EP1007762B1 (en) Method and apparatus for detecting the endpoint of a chamber cleaning
US4328068A (en) Method for end point detection in a plasma etching process
JP4567828B2 (ja) 終点検出方法
JPS59159984A (ja) ドライエッチング装置
JP3333657B2 (ja) 気相エッチング装置及び気相エッチング方法
JP3381407B2 (ja) プラズマモニタ装置およびプラズマモニタ方法
US6267121B1 (en) Process to season and determine condition of a high density plasma etcher
JP2944802B2 (ja) ドライエッチング方法
JP3217581B2 (ja) エッチング終点検出方法
JPH09209179A (ja) ドライエッチング装置およびそのクリーニング方法
JP2006073751A (ja) プラズマクリーニング処理の終点検出方法及び終点検出装置
US5718796A (en) Dry etching system
JP2906752B2 (ja) ドライエッチング方法
JP3231560B2 (ja) プラズマエッチング装置
JP2005019763A (ja) ドライエッチング装置
JPH07130708A (ja) エッチング終点検出機構
JPH07201832A (ja) 半導体製造装置
JPH0343775B2 (enrdf_load_stackoverflow)
JP2002151475A (ja) 薄膜処理モニタリング方法と薄膜処理装置
JPH06120172A (ja) 半導体製造装置
JP3609241B2 (ja) プラズマ処理装置およびプラズマ処理方法
JPS638187B2 (enrdf_load_stackoverflow)
JP3901429B2 (ja) プラズマ処理装置
JPS627274B2 (enrdf_load_stackoverflow)