JPS59152638A - 化合物半導体の切断方法 - Google Patents

化合物半導体の切断方法

Info

Publication number
JPS59152638A
JPS59152638A JP58028027A JP2802783A JPS59152638A JP S59152638 A JPS59152638 A JP S59152638A JP 58028027 A JP58028027 A JP 58028027A JP 2802783 A JP2802783 A JP 2802783A JP S59152638 A JPS59152638 A JP S59152638A
Authority
JP
Japan
Prior art keywords
compound semiconductor
sheet
grooves
cutting
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58028027A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0342508B2 (enExample
Inventor
Hiromi Takasu
高須　広海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP58028027A priority Critical patent/JPS59152638A/ja
Publication of JPS59152638A publication Critical patent/JPS59152638A/ja
Publication of JPH0342508B2 publication Critical patent/JPH0342508B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P54/00—

Landscapes

  • Dicing (AREA)
JP58028027A 1983-02-21 1983-02-21 化合物半導体の切断方法 Granted JPS59152638A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58028027A JPS59152638A (ja) 1983-02-21 1983-02-21 化合物半導体の切断方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58028027A JPS59152638A (ja) 1983-02-21 1983-02-21 化合物半導体の切断方法

Publications (2)

Publication Number Publication Date
JPS59152638A true JPS59152638A (ja) 1984-08-31
JPH0342508B2 JPH0342508B2 (enExample) 1991-06-27

Family

ID=12237256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58028027A Granted JPS59152638A (ja) 1983-02-21 1983-02-21 化合物半導体の切断方法

Country Status (1)

Country Link
JP (1) JPS59152638A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62105446A (ja) * 1985-10-31 1987-05-15 Sharp Corp 半導体装置の製造方法
US4914815A (en) * 1988-02-23 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing hybrid integrated circuits
US6829418B2 (en) 2000-09-20 2004-12-07 The Furukawa Electric Co., Ltd. Optical waveguide circuit device
JP2005033196A (ja) * 2003-06-19 2005-02-03 Showa Denko Kk 半導体ウエーハのダイシング方法および発光ダイオードチップ
JP2005167190A (ja) * 2003-12-01 2005-06-23 Taiwan Semiconductor Manufacturing Co Ltd 半導体ウェハのダイシング方法
JP2008028139A (ja) * 2006-07-21 2008-02-07 Ricoh Co Ltd 半導体チップの製造方法、面発光型半導体レーザ、面発光型半導体レーザアレイ、光走査装置及び画像形成装置
JP2008235521A (ja) * 2007-03-20 2008-10-02 Sanyo Electric Co Ltd 半導体基板の割断方法及び太陽電池の割断方法並びに太陽電池
JP2014238327A (ja) * 2013-06-07 2014-12-18 シーメンス アクチエンゲゼルシヤフトＳｉｅｍｅｎｓ Ａｋｔｉｅｎｇｅｓｅｌｌｓｃｈａｆｔ 半導体ウェハをダイシングしてなる放射線検出器及びそのダイシング方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940671A (enExample) * 1972-08-24 1974-04-16

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940671A (enExample) * 1972-08-24 1974-04-16

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62105446A (ja) * 1985-10-31 1987-05-15 Sharp Corp 半導体装置の製造方法
US4914815A (en) * 1988-02-23 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing hybrid integrated circuits
US6829418B2 (en) 2000-09-20 2004-12-07 The Furukawa Electric Co., Ltd. Optical waveguide circuit device
JP2005033196A (ja) * 2003-06-19 2005-02-03 Showa Denko Kk 半導体ウエーハのダイシング方法および発光ダイオードチップ
JP2005167190A (ja) * 2003-12-01 2005-06-23 Taiwan Semiconductor Manufacturing Co Ltd 半導体ウェハのダイシング方法
JP2008028139A (ja) * 2006-07-21 2008-02-07 Ricoh Co Ltd 半導体チップの製造方法、面発光型半導体レーザ、面発光型半導体レーザアレイ、光走査装置及び画像形成装置
JP2008235521A (ja) * 2007-03-20 2008-10-02 Sanyo Electric Co Ltd 半導体基板の割断方法及び太陽電池の割断方法並びに太陽電池
US8389320B2 (en) 2007-03-20 2013-03-05 Sanyo Electric Co., Ltd. Method for fracturing semiconductor substrate, method for fracturing solar cell, and the solar cell
US8513047B2 (en) 2007-03-20 2013-08-20 Sanyo Electric Co., Ltd. Method for fracturing semiconductor substrate, method for fracturing solar cell, and the solar cell
JP2014238327A (ja) * 2013-06-07 2014-12-18 シーメンス アクチエンゲゼルシヤフトＳｉｅｍｅｎｓ Ａｋｔｉｅｎｇｅｓｅｌｌｓｃｈａｆｔ 半導体ウェハをダイシングしてなる放射線検出器及びそのダイシング方法

Also Published As

Publication number Publication date
JPH0342508B2 (enExample) 1991-06-27

Similar Documents

Publication Publication Date Title
US6413839B1 (en) Semiconductor device separation using a patterned laser projection
JP2780618B2 (ja) 窒化ガリウム系化合物半導体チップの製造方法
US12394765B2 (en) Discontinuous patterned bonds for semiconductor devices and associated systems and methods
CN101015070B (zh) 制造半导体发光器件的方法以及采用该方法制造的器件
JP2914014B2 (ja) 窒化ガリウム系化合物半導体チップの製造方法
JP2748355B2 (ja) 窒化ガリウム系化合物半導体チップの製造方法
JP2861991B2 (ja) 窒化ガリウム系化合物半導体チップの製造方法
US20050263854A1 (en) Thick laser-scribed GaN-on-sapphire optoelectronic devices
JPS59152638A (ja) 化合物半導体の切断方法
US20080305570A1 (en) Led chip production method
JP2765644B2 (ja) 窒化ガリウム系化合物半導体ウエハーの切断方法
JP3227287B2 (ja) 窒化ガリウム系化合物半導体チップの製造方法と窒化ガリウム系化合物半導体素子
JP3723347B2 (ja) 半導体発光素子の製法
JP2748354B2 (ja) 窒化ガリウム系化合物半導体チップの製造方法
JPH1027769A (ja) 半導体チップとその製造方法
JP3421523B2 (ja) ウエハーの分割方法
JPH06283758A (ja) 窒化ガリウム系化合物半導体ウエハーの切断方法
JP2859478B2 (ja) 発光デバイス用の窒化ガリウム系化合物半導体ウエハーの切断方法
JP2005191551A (ja) 半導体チップ製造方法および半導体チップ
CN109427565B (zh) 一种晶圆切割方法
JP2004363213A (ja) 半導体装置の製造方法
JP3938101B2 (ja) 発光素子の製造方法
JP3679626B2 (ja) 窒化ガリウム系化合物半導体チップ
CN104428115A (zh) 单晶体切割方法
JP2004158872A (ja) 発光素子