JPS59151454A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS59151454A
JPS59151454A JP58026460A JP2646083A JPS59151454A JP S59151454 A JPS59151454 A JP S59151454A JP 58026460 A JP58026460 A JP 58026460A JP 2646083 A JP2646083 A JP 2646083A JP S59151454 A JPS59151454 A JP S59151454A
Authority
JP
Japan
Prior art keywords
links
word line
memory device
phase
mo8t
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58026460A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0516184B2 (enrdf_load_stackoverflow
Inventor
Kazuhiro Shimotori
下酉　和博
Kazuyasu Fujishima
一康 藤島
Hideyuki Ozaki
尾崎　英之
Hideji Miyatake
秀司 宮武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58026460A priority Critical patent/JPS59151454A/ja
Publication of JPS59151454A publication Critical patent/JPS59151454A/ja
Publication of JPH0516184B2 publication Critical patent/JPH0516184B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP58026460A 1983-02-17 1983-02-17 半導体記憶装置 Granted JPS59151454A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58026460A JPS59151454A (ja) 1983-02-17 1983-02-17 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58026460A JPS59151454A (ja) 1983-02-17 1983-02-17 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS59151454A true JPS59151454A (ja) 1984-08-29
JPH0516184B2 JPH0516184B2 (enrdf_load_stackoverflow) 1993-03-03

Family

ID=12194116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58026460A Granted JPS59151454A (ja) 1983-02-17 1983-02-17 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS59151454A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997023907A1 (en) * 1995-12-22 1997-07-03 Micron Technology, Inc. Reduced pitch laser redundancy fuse bank structure
US5905295A (en) * 1997-04-01 1999-05-18 Micron Technology, Inc. Reduced pitch laser redundancy fuse bank structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176948A (ja) * 1982-04-12 1983-10-17 Toshiba Corp 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176948A (ja) * 1982-04-12 1983-10-17 Toshiba Corp 半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997023907A1 (en) * 1995-12-22 1997-07-03 Micron Technology, Inc. Reduced pitch laser redundancy fuse bank structure
US5747869A (en) * 1995-12-22 1998-05-05 Micron Technology, Inc. Reduced pitch laser redundancy fuse bank structure
US6597054B1 (en) 1995-12-22 2003-07-22 Micron Technology, Inc. Reduced pitch laser redundancy fuse bank structure
US5905295A (en) * 1997-04-01 1999-05-18 Micron Technology, Inc. Reduced pitch laser redundancy fuse bank structure

Also Published As

Publication number Publication date
JPH0516184B2 (enrdf_load_stackoverflow) 1993-03-03

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