JPS59144176A - 整流素子の製造方法 - Google Patents

整流素子の製造方法

Info

Publication number
JPS59144176A
JPS59144176A JP58154242A JP15424283A JPS59144176A JP S59144176 A JPS59144176 A JP S59144176A JP 58154242 A JP58154242 A JP 58154242A JP 15424283 A JP15424283 A JP 15424283A JP S59144176 A JPS59144176 A JP S59144176A
Authority
JP
Japan
Prior art keywords
semiconductor structure
rectifying element
heat sink
silver
diffusion welding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58154242A
Other languages
English (en)
Japanese (ja)
Inventor
エリク・ロベルトウイツチ・ガリンスキ−
ウラジミ−ル・ビクトロウイツチ・ズンベロフ
エドウアルド・ゲルマノウイツチ・カルポフ
オレグ・ミハイロウイツチ・コロルコフ
ビクトル・レオニドウイツチ・クズミン
ゲンナジ−・ニコラエウイツチ・スルゼンコフ
グンナ−ル・カルロウイツチ・トムソ−
エフイム・ダビドウイツチ・フトルヤンスキ−
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAUCHINOOISUREDOWAACHIERUSUKII I PUROEKUTONOOCHIEFUNOROGIICHIESUKII INST SYSTEM PURANIROWANIA I UPURAFURENIA BEE
NI I PUROEKUTONOOCHIEFUNOROGII
Original Assignee
NAUCHINOOISUREDOWAACHIERUSUKII I PUROEKUTONOOCHIEFUNOROGIICHIESUKII INST SYSTEM PURANIROWANIA I UPURAFURENIA BEE
NI I PUROEKUTONOOCHIEFUNOROGII
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAUCHINOOISUREDOWAACHIERUSUKII I PUROEKUTONOOCHIEFUNOROGIICHIESUKII INST SYSTEM PURANIROWANIA I UPURAFURENIA BEE, NI I PUROEKUTONOOCHIEFUNOROGII filed Critical NAUCHINOOISUREDOWAACHIERUSUKII I PUROEKUTONOOCHIEFUNOROGIICHIESUKII INST SYSTEM PURANIROWANIA I UPURAFURENIA BEE
Publication of JPS59144176A publication Critical patent/JPS59144176A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Rectifiers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Thyristors (AREA)
JP58154242A 1983-02-03 1983-08-25 整流素子の製造方法 Pending JPS59144176A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SU3540851 1983-02-03
SU833540851A SU1114253A1 (ru) 1983-02-03 1983-02-03 Способ изготовлени выпр мительных элементов

Publications (1)

Publication Number Publication Date
JPS59144176A true JPS59144176A (ja) 1984-08-18

Family

ID=21045701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58154242A Pending JPS59144176A (ja) 1983-02-03 1983-08-25 整流素子の製造方法

Country Status (6)

Country Link
JP (1) JPS59144176A (sv)
DE (1) DE3325355A1 (sv)
FR (1) FR2540673B1 (sv)
IT (1) IT1195541B (sv)
SE (1) SE8303838L (sv)
SU (1) SU1114253A1 (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446780A1 (de) * 1984-12-21 1986-07-03 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren und verbindungswerkstoff zum metallischen verbinden von bauteilen
DE58908749D1 (de) * 1988-03-03 1995-01-26 Siemens Ag Verfahren zum Befestigen von elektronischen Bauelementen auf Substraten und Anordnung zur Durchführung desselben.
EP0330896A3 (de) * 1988-03-03 1991-01-09 Siemens Aktiengesellschaft Verfahren zum Befestigen von Halbleiterbauelementen auf Substraten und Anordnungen zur Durchführung desselben

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380169A (en) * 1976-12-24 1978-07-15 Nippon Intaanashiyonaru Seiriy Diffused alloy semiconductor
JPS55128836A (en) * 1979-03-29 1980-10-06 Toshiba Corp Method of mounting semiconductor pellet
JPS5691990A (en) * 1979-12-26 1981-07-25 Hitachi Ltd Diffusion joining device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US326598A (en) * 1885-09-22 Hot-air furnace
NL275554A (sv) * 1961-04-19 1900-01-01
FR1419202A (fr) * 1963-12-31 1965-11-26 Ibm Contacts ohmiques pour éléments semi-conducteurs
FR2046592A5 (sv) * 1970-04-30 1971-03-05 Silec Semi Conducteurs
US3717797A (en) * 1971-03-19 1973-02-20 Westinghouse Electric Corp One piece aluminum electrical contact member for semiconductor devices
GB1389542A (en) * 1971-06-17 1975-04-03 Mullard Ltd Methods of securing a semiconductor body to a support
FR2412168A1 (fr) * 1977-12-15 1979-07-13 Silicium Semiconducteur Ssc Diodes ecreteuses de surtension
US4315591A (en) * 1979-03-08 1982-02-16 General Electric Company Method for thermo-compression diffusion bonding a structured copper strain buffer to each side of a substrateless semiconductor device wafer
GB2067117B (en) * 1980-01-02 1983-07-06 Secr Defence Bonding semi-conductor bodies to aluminium thick-film circuits
DD220536A1 (de) * 1984-01-10 1985-04-03 Ilmenau Tech Hochschule Verfahren zum verbinden von silizium und germanium

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380169A (en) * 1976-12-24 1978-07-15 Nippon Intaanashiyonaru Seiriy Diffused alloy semiconductor
JPS55128836A (en) * 1979-03-29 1980-10-06 Toshiba Corp Method of mounting semiconductor pellet
JPS5691990A (en) * 1979-12-26 1981-07-25 Hitachi Ltd Diffusion joining device

Also Published As

Publication number Publication date
SE8303838D0 (sv) 1983-07-05
IT8341604A1 (it) 1985-03-12
FR2540673A1 (fr) 1984-08-10
SE8303838L (sv) 1984-08-04
IT1195541B (it) 1988-10-19
DE3325355A1 (de) 1984-08-09
SU1114253A1 (ru) 1987-03-23
IT8341604A0 (it) 1983-09-12
FR2540673B1 (fr) 1988-07-29

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