DE3325355A1 - Verfahren zur herstellung eines gleichrichterelements - Google Patents

Verfahren zur herstellung eines gleichrichterelements

Info

Publication number
DE3325355A1
DE3325355A1 DE19833325355 DE3325355A DE3325355A1 DE 3325355 A1 DE3325355 A1 DE 3325355A1 DE 19833325355 DE19833325355 DE 19833325355 DE 3325355 A DE3325355 A DE 3325355A DE 3325355 A1 DE3325355 A1 DE 3325355A1
Authority
DE
Germany
Prior art keywords
semiconductor structure
temperature
diffusion welding
metal foil
rectifier element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19833325355
Other languages
German (de)
English (en)
Inventor
Efim Davidovič Tallin Chutoryanskij
Erik Robertovič Galinskij
Eduard Germanovič Karpov
Oleg Michailovič Korolkov
Viktor Leonidovič Kuzmin
Gennadij Nikolaevič Surženkov
Gunnar Kaarlovič Toomsoo
Vladimir Viktorovič Zumberov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NI I PT I SISTEM PLANIROVANIJA
Original Assignee
NI I PT I SISTEM PLANIROVANIJA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NI I PT I SISTEM PLANIROVANIJA filed Critical NI I PT I SISTEM PLANIROVANIJA
Publication of DE3325355A1 publication Critical patent/DE3325355A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Rectifiers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Thyristors (AREA)
DE19833325355 1983-02-03 1983-07-14 Verfahren zur herstellung eines gleichrichterelements Ceased DE3325355A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU833540851A SU1114253A1 (ru) 1983-02-03 1983-02-03 Способ изготовлени выпр мительных элементов

Publications (1)

Publication Number Publication Date
DE3325355A1 true DE3325355A1 (de) 1984-08-09

Family

ID=21045701

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833325355 Ceased DE3325355A1 (de) 1983-02-03 1983-07-14 Verfahren zur herstellung eines gleichrichterelements

Country Status (6)

Country Link
JP (1) JPS59144176A (sv)
DE (1) DE3325355A1 (sv)
FR (1) FR2540673B1 (sv)
IT (1) IT1195541B (sv)
SE (1) SE8303838L (sv)
SU (1) SU1114253A1 (sv)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446780A1 (de) * 1984-12-21 1986-07-03 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren und verbindungswerkstoff zum metallischen verbinden von bauteilen
US4903886A (en) * 1988-03-03 1990-02-27 Siemens Aktiengesellschaft Method and apparatus for fastening semiconductor components to substrates
US5058796A (en) * 1988-03-03 1991-10-22 Siemens Aktiengesellschaft Apparatus for fastening electronic components to substrates

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3717797A (en) * 1971-03-19 1973-02-20 Westinghouse Electric Corp One piece aluminum electrical contact member for semiconductor devices
DE3434105A1 (de) * 1984-01-10 1985-07-18 Veb Kombinat Nagema, Ddr 8045 Dresden Verfahren zum verbinden von silizium und germanium

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US326598A (en) * 1885-09-22 Hot-air furnace
NL275554A (sv) * 1961-04-19 1900-01-01
FR1419202A (fr) * 1963-12-31 1965-11-26 Ibm Contacts ohmiques pour éléments semi-conducteurs
FR2046592A5 (sv) * 1970-04-30 1971-03-05 Silec Semi Conducteurs
GB1389542A (en) * 1971-06-17 1975-04-03 Mullard Ltd Methods of securing a semiconductor body to a support
JPS5950116B2 (ja) * 1976-12-24 1984-12-06 日本インタ−ナショナル整流器株式会社 拡散．合金型半導体装置
FR2412168A1 (fr) * 1977-12-15 1979-07-13 Silicium Semiconducteur Ssc Diodes ecreteuses de surtension
US4315591A (en) * 1979-03-08 1982-02-16 General Electric Company Method for thermo-compression diffusion bonding a structured copper strain buffer to each side of a substrateless semiconductor device wafer
JPS55128836A (en) * 1979-03-29 1980-10-06 Toshiba Corp Method of mounting semiconductor pellet
JPS5691990A (en) * 1979-12-26 1981-07-25 Hitachi Ltd Diffusion joining device
GB2067117B (en) * 1980-01-02 1983-07-06 Secr Defence Bonding semi-conductor bodies to aluminium thick-film circuits

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3717797A (en) * 1971-03-19 1973-02-20 Westinghouse Electric Corp One piece aluminum electrical contact member for semiconductor devices
DE3434105A1 (de) * 1984-01-10 1985-07-18 Veb Kombinat Nagema, Ddr 8045 Dresden Verfahren zum verbinden von silizium und germanium

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Svaro?noe Proizvdstvo, 7(1978), S. 4-5
SvaroCnoe Proizvdstvo, 7(1978), S. 4-5 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446780A1 (de) * 1984-12-21 1986-07-03 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren und verbindungswerkstoff zum metallischen verbinden von bauteilen
US4903886A (en) * 1988-03-03 1990-02-27 Siemens Aktiengesellschaft Method and apparatus for fastening semiconductor components to substrates
US5058796A (en) * 1988-03-03 1991-10-22 Siemens Aktiengesellschaft Apparatus for fastening electronic components to substrates
US5067647A (en) * 1988-03-03 1991-11-26 Siemens Aktiengesellschaft Apparatus for fastening semiconductor components to substrates

Also Published As

Publication number Publication date
SE8303838D0 (sv) 1983-07-05
JPS59144176A (ja) 1984-08-18
IT8341604A1 (it) 1985-03-12
FR2540673A1 (fr) 1984-08-10
SE8303838L (sv) 1984-08-04
IT1195541B (it) 1988-10-19
SU1114253A1 (ru) 1987-03-23
IT8341604A0 (it) 1983-09-12
FR2540673B1 (fr) 1988-07-29

Similar Documents

Publication Publication Date Title
EP0186829B1 (de) Verfahren und Verbindungswerkstoff zum metallischen Verbinden von Bauteilen
DE10208635B4 (de) Diffusionslotstelle, Verbund aus zwei über eine Diffusionslotstelle verbundenen Teilen und Verfahren zur Herstellung der Diffusionslotstelle
EP1233935B1 (de) Verfahren zur festlegung eines aus metall-matrix-composite-(mmc) material gebildeten körpers auf einem keramischen körper
EP0001220B1 (de) Verfahren zum mittelbaren Verbinden zweier Teile
EP1632463B1 (de) Werkstoffverbund
DE2933835A1 (de) Verfahren zum befestigen von in scheiben- oder plattenform vorliegenden targetmaterialien auf kuehlteller fuer aufstaeubanlagen
DE102015104518B3 (de) Verfahren zur Herstellung einer Schaltungsträgeranordnung mit einem Träger, der eine durch ein Aluminium-Siliziumkarbid-Metallmatrixkompositmaterial gebildete Oberfläche aufweist
DE19526822A1 (de) Legierung, insbesondere Lotlegierung, Verfahren zum Verbinden von Werkstücken durch Löten mittels einer Lotlegierung sowie Verwendung einer Legierung zum Löten
EP3698400B1 (de) Verfahren zum erzeugen eines kühlkörpers auf einer elektronischen baugruppe
DE102014222819A1 (de) Leistungshalbleiterkontaktstruktur mit Bondbuffer sowie Verfahren zu dessen Herstellung
CH645208A5 (de) Verfahren zur herstellung von elektrischen kontakten an halbleiterbauelementen.
DE19747846A1 (de) Bauelement und Verfahren zum Herstellen des Bauelements
EP2324544A2 (de) Wärmeübertragungsvorrichtung zur doppelseitigen kühlung eines halbleiterbauelementes
DE102014105000B4 (de) Verfahren zur Herstellung und zum Bestücken eines Schaltungsträgers
DE102020204989B3 (de) Verfahren zur additiven Fertigung eines Schaltungsträgers und Schaltungsträger
DE2517347C2 (de) Kontaktkörper und Herstellungsverfahren hierzu
EP0663670B1 (de) Verfahren zur Herstellung einer Kühleinrichtung
DE2525121A1 (de) Waermepumpe
DE2816120A1 (de) Verfahren zum verbinden eines wolfram enthaltenden anodentargets mit einem graphit-substrat
DE69018077T2 (de) Natrium/schwefel zelle mit einem keramischen und einem metallischen teil, die verbunden sind.
DE3325355A1 (de) Verfahren zur herstellung eines gleichrichterelements
EP0191300B1 (de) Widerstandsverbindungsverfahren zum Löten oder Schweissen metastabiler Metalle
DE2528000A1 (de) Verfahren zur herstellung einer loetflaeche relativ grosser abmessungen
DE3110080A1 (de) Verfahren zum verbinden eines halbleiterkoerpers mit einem metallischen systemtraeger und danach hergestellte halbleiteranordnung
WO2017005716A1 (de) Verfahren zum erzeugen einer kühlbaren elektronischen komponente und baugruppe mit einer elektronischen komponente und einem kühlelement

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8131 Rejection