JPS59143347A - 半導体基板材料の製造方法 - Google Patents
半導体基板材料の製造方法Info
- Publication number
- JPS59143347A JPS59143347A JP58017141A JP1714183A JPS59143347A JP S59143347 A JPS59143347 A JP S59143347A JP 58017141 A JP58017141 A JP 58017141A JP 1714183 A JP1714183 A JP 1714183A JP S59143347 A JPS59143347 A JP S59143347A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- organic binder
- semiconductor substrate
- substrate material
- oxidizing atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 title claims description 25
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000000843 powder Substances 0.000 claims description 47
- 239000011230 binding agent Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 19
- 230000001590 oxidative effect Effects 0.000 claims description 17
- 239000002904 solvent Substances 0.000 claims description 17
- 238000005245 sintering Methods 0.000 claims description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 11
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 7
- 238000004898 kneading Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- 238000005470 impregnation Methods 0.000 description 6
- 239000011148 porous material Substances 0.000 description 5
- 238000004663 powder metallurgy Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- -1 plasticity improver Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Powder Metallurgy (AREA)
- Die Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58017141A JPS59143347A (ja) | 1983-02-03 | 1983-02-03 | 半導体基板材料の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58017141A JPS59143347A (ja) | 1983-02-03 | 1983-02-03 | 半導体基板材料の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59143347A true JPS59143347A (ja) | 1984-08-16 |
| JPH0336305B2 JPH0336305B2 (enrdf_load_stackoverflow) | 1991-05-31 |
Family
ID=11935723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58017141A Granted JPS59143347A (ja) | 1983-02-03 | 1983-02-03 | 半導体基板材料の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59143347A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01165706A (ja) * | 1987-12-22 | 1989-06-29 | Kawasaki Steel Corp | 複相組織焼結体およびその製造方法 |
| JPH0449642A (ja) * | 1990-06-18 | 1992-02-19 | Nippon Tungsten Co Ltd | 半導体装置用基板材料及びその製造方法 |
| JPH04124205A (ja) * | 1990-09-12 | 1992-04-24 | Nippon Tungsten Co Ltd | 高精度ウェイト部品とその製造方法 |
| EP0645804A3 (en) * | 1993-09-16 | 1996-05-29 | Sumitomo Electric Industries | Metal housing for semiconductor device and method for its production. |
| EP0784341A4 (en) * | 1995-06-23 | 1997-05-14 | Toho Kinzoku Kk | METHOD OF PRODUCING A MATERIAL FOR A SEMICONDUCTOR SUBSTRATE, MATERIAL FOR A SEMICONDUCTOR SUBSTRATE AND PACKING FOR A SEMICONDUCTOR |
-
1983
- 1983-02-03 JP JP58017141A patent/JPS59143347A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01165706A (ja) * | 1987-12-22 | 1989-06-29 | Kawasaki Steel Corp | 複相組織焼結体およびその製造方法 |
| JPH0449642A (ja) * | 1990-06-18 | 1992-02-19 | Nippon Tungsten Co Ltd | 半導体装置用基板材料及びその製造方法 |
| JPH04124205A (ja) * | 1990-09-12 | 1992-04-24 | Nippon Tungsten Co Ltd | 高精度ウェイト部品とその製造方法 |
| EP0645804A3 (en) * | 1993-09-16 | 1996-05-29 | Sumitomo Electric Industries | Metal housing for semiconductor device and method for its production. |
| EP1282166A3 (en) * | 1993-09-16 | 2003-03-05 | Sumitomo Electric Industries, Ltd. | Metal casing for semiconductor device having high thermal conductivity and thermal expansion coefficient similar to that of semiconductor and method for manufacturing the same |
| EP0784341A4 (en) * | 1995-06-23 | 1997-05-14 | Toho Kinzoku Kk | METHOD OF PRODUCING A MATERIAL FOR A SEMICONDUCTOR SUBSTRATE, MATERIAL FOR A SEMICONDUCTOR SUBSTRATE AND PACKING FOR A SEMICONDUCTOR |
| US5905938A (en) * | 1995-06-23 | 1999-05-18 | Toho Kinzoku Co., Ltd. | Method of manufacturing a semiconductor substrate material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0336305B2 (enrdf_load_stackoverflow) | 1991-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6346317B1 (en) | Electronic components incorporating ceramic-metal composites | |
| US5523049A (en) | Heat sink and method of fabricating | |
| US6737168B1 (en) | Composite material and semiconductor device using the same | |
| EP1601631A1 (de) | Verfahren zur herstellung eines verbundwerkstoffes | |
| CN100436616C (zh) | 近全致密高W或Mo含量W-Cu或Mo-Cu复合材料的制备方法 | |
| KR100217032B1 (ko) | 구리 용침용 텅스텐 골격 구조 제조 방법 및 이를 이용한 텅스텐-구리 복합재료 제조 방법 | |
| JP3479738B2 (ja) | 半導体パッケージと、それに用いる放熱基板の製造方法 | |
| CN106906388B (zh) | 一种高硅铝合金的制备方法 | |
| JP4113971B2 (ja) | 低膨張材料及びその製造方法 | |
| JPS59143347A (ja) | 半導体基板材料の製造方法 | |
| JP3548991B2 (ja) | 放熱基板及びその製造方法 | |
| Jiang et al. | Fabrication of electronic packaging grade Cu–W materials by high-temperature and high-velocity compaction | |
| US5073526A (en) | Electronic package comprising aluminum nitride and aluminum nitride-borosilicate glass composite | |
| JP4206476B2 (ja) | アルミニウム焼結材の製造方法 | |
| US6143421A (en) | Electronic components incorporating ceramic-metal composites | |
| WO2004038049A1 (ja) | 複合材料、その製造方法およびそれを用いた部材 | |
| JPS59141248A (ja) | 半導体基板材料 | |
| JPH0336304B2 (enrdf_load_stackoverflow) | ||
| JP2004055577A (ja) | アルミニウム−炭化珪素質板状複合体 | |
| JP3270798B2 (ja) | 炭化珪素質焼結体の製造方法 | |
| RU2261780C1 (ru) | Способ получения металлического композиционного материала и изделия из него | |
| JP4265247B2 (ja) | 高放熱性合金、放熱板、半導体素子用パッケージ、およびこれらの製造方法 | |
| JP3204566B2 (ja) | ヒートシンク材料の製造方法 | |
| JPH07233404A (ja) | ヒートシンク材料の製造方法 | |
| JPH046163A (ja) | 窒化アルミニウムから成る担持体の製造方法 |