JPS59139196A - 半導体メモリ装置 - Google Patents

半導体メモリ装置

Info

Publication number
JPS59139196A
JPS59139196A JP58226722A JP22672283A JPS59139196A JP S59139196 A JPS59139196 A JP S59139196A JP 58226722 A JP58226722 A JP 58226722A JP 22672283 A JP22672283 A JP 22672283A JP S59139196 A JPS59139196 A JP S59139196A
Authority
JP
Japan
Prior art keywords
transistor
time
column line
coupling
sense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58226722A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0520833B2 (cs
Inventor
デイ−・ジエイ・マツクエルロイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS59139196A publication Critical patent/JPS59139196A/ja
Publication of JPH0520833B2 publication Critical patent/JPH0520833B2/ja
Granted legal-status Critical Current

Links

JP58226722A 1982-12-01 1983-11-30 半導体メモリ装置 Granted JPS59139196A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44581382A 1982-12-01 1982-12-01
US445813 1982-12-01

Publications (2)

Publication Number Publication Date
JPS59139196A true JPS59139196A (ja) 1984-08-09
JPH0520833B2 JPH0520833B2 (cs) 1993-03-22

Family

ID=23770300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58226722A Granted JPS59139196A (ja) 1982-12-01 1983-11-30 半導体メモリ装置

Country Status (1)

Country Link
JP (1) JPS59139196A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6323293A (ja) * 1986-07-16 1988-01-30 Sony Corp 半導体記憶装置
US6292417B1 (en) 2000-07-26 2001-09-18 Micron Technology, Inc. Memory device with reduced bit line pre-charge voltage
US6301175B1 (en) 2000-07-26 2001-10-09 Micron Technology, Inc. Memory device with single-ended sensing and low voltage pre-charge

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4962041A (cs) * 1972-10-09 1974-06-15
JPS5782286A (en) * 1980-11-06 1982-05-22 Mitsubishi Electric Corp Semiconductor storage device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4962041A (cs) * 1972-10-09 1974-06-15
JPS5782286A (en) * 1980-11-06 1982-05-22 Mitsubishi Electric Corp Semiconductor storage device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6323293A (ja) * 1986-07-16 1988-01-30 Sony Corp 半導体記憶装置
US6292417B1 (en) 2000-07-26 2001-09-18 Micron Technology, Inc. Memory device with reduced bit line pre-charge voltage
US6301175B1 (en) 2000-07-26 2001-10-09 Micron Technology, Inc. Memory device with single-ended sensing and low voltage pre-charge

Also Published As

Publication number Publication date
JPH0520833B2 (cs) 1993-03-22

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