JPS59132669A - 電荷転送装置 - Google Patents

電荷転送装置

Info

Publication number
JPS59132669A
JPS59132669A JP58007548A JP754883A JPS59132669A JP S59132669 A JPS59132669 A JP S59132669A JP 58007548 A JP58007548 A JP 58007548A JP 754883 A JP754883 A JP 754883A JP S59132669 A JPS59132669 A JP S59132669A
Authority
JP
Japan
Prior art keywords
input
transfer
potential
charge
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58007548A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0522382B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Tadakuni Narabe
忠邦 奈良部
Takeo Hashimoto
橋本 武夫
Hideo Kanbe
秀夫 神戸
Maki Sato
真木 佐藤
Miaki Nakashio
中塩 みあき
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP58007548A priority Critical patent/JPS59132669A/ja
Priority to US06/543,533 priority patent/US4621369A/en
Publication of JPS59132669A publication Critical patent/JPS59132669A/ja
Publication of JPH0522382B2 publication Critical patent/JPH0522382B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Shift Register Type Memory (AREA)
JP58007548A 1983-01-20 1983-01-20 電荷転送装置 Granted JPS59132669A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58007548A JPS59132669A (ja) 1983-01-20 1983-01-20 電荷転送装置
US06/543,533 US4621369A (en) 1983-01-20 1983-10-20 Input circuit for charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58007548A JPS59132669A (ja) 1983-01-20 1983-01-20 電荷転送装置

Publications (2)

Publication Number Publication Date
JPS59132669A true JPS59132669A (ja) 1984-07-30
JPH0522382B2 JPH0522382B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-03-29

Family

ID=11668844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58007548A Granted JPS59132669A (ja) 1983-01-20 1983-01-20 電荷転送装置

Country Status (2)

Country Link
US (1) US4621369A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS59132669A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5086440A (en) * 1989-04-18 1992-02-04 Sony Corporation Charge coupled device with enhanced input structure
US5177772A (en) * 1984-12-06 1993-01-05 Sony Corporation Charge coupled device with enhanced input structure
US5247554A (en) * 1987-01-16 1993-09-21 Kabushiki Kaisha Toshiba Charge detection circuit
JPH0728029B2 (ja) * 1987-05-21 1995-03-29 株式会社東芝 電荷転送素子
FR2625041B1 (fr) * 1987-12-22 1990-04-20 Thomson Csf Dispositif de transfert de charges a abaissement de potentiel de transfert en sortie, et procede de fabrication de ce dispositif
FR2626102B1 (fr) * 1988-01-19 1990-05-04 Thomson Csf Memoire a transfert de charges et procede de fabrication de cette memoire
NL8900540A (nl) * 1989-03-06 1990-10-01 Philips Nv Halfgeleiderinrichting.
US5115458A (en) * 1989-09-05 1992-05-19 Eastman Kodak Company Reducing dark current in charge coupled devices
JPH0821712B2 (ja) * 1990-06-12 1996-03-04 株式会社東芝 電荷転送素子の入力バイアス回路
US5182647A (en) * 1990-12-13 1993-01-26 Eastman Kodak Company High resolution charge-coupled device (ccd) camera system
JP2768312B2 (ja) * 1995-06-02 1998-06-25 日本電気株式会社 電荷転送装置、その駆動方法及び製造方法
JP2716011B2 (ja) * 1995-08-09 1998-02-18 日本電気株式会社 電荷転送装置及びその製造方法
JP4695745B2 (ja) * 1999-08-11 2011-06-08 富士フイルム株式会社 固体撮像素子及びその製造方法
JP2008060550A (ja) * 2006-07-31 2008-03-13 Sanyo Electric Co Ltd 撮像装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558007A (en) * 1978-06-30 1980-01-21 Toshiba Corp Electric charge transferring device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit
US3789267A (en) * 1971-06-28 1974-01-29 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
DE2501934C2 (de) * 1974-01-25 1982-11-11 Hughes Aircraft Co., Culver City, Calif. Verfahren zum Betrieb eines ladungsgekoppelten Halbleiter-Bauelementes und ladungsgekoppeltes Halbleiter-Bauelement zur Durchführung dieses Verfahrens
US4156818A (en) * 1975-12-23 1979-05-29 International Business Machines Corporation Operating circuitry for semiconductor charge coupled devices
US4139784A (en) * 1977-08-02 1979-02-13 Rca Corporation CCD Input circuits
US4140923A (en) * 1977-11-25 1979-02-20 Rca Corporation Charge transfer output circuits
US4277694A (en) * 1979-10-01 1981-07-07 Hughes Aircraft Company Charge coupled device variable divider with integrating well

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558007A (en) * 1978-06-30 1980-01-21 Toshiba Corp Electric charge transferring device

Also Published As

Publication number Publication date
JPH0522382B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-03-29
US4621369A (en) 1986-11-04

Similar Documents

Publication Publication Date Title
JPS59132669A (ja) 電荷転送装置
US5254487A (en) Method of manufacturing high and low voltage CMOS transistors on a single chip
US4859624A (en) Manufacturing method of semiconductor device having CCD and peripheral circuit
EP0080732A2 (en) Semiconductor analog switch circuit using MOS transistors
US5306932A (en) Charge transfer device provided with improved output structure
US5303053A (en) Charge coupled device for overcoming an output voltage difference between different shift registers
JPH0391247A (ja) Mosfet空乏デバイス
Keast et al. CCD/CMOS process for integrated image acquisition and early vision signal processing
EP0409245B1 (en) Charge transfer device provided with improved output structure
JP3208829B2 (ja) 電荷結合装置
WO1987001218A1 (en) Integrated-circuit having two nmos depletion mode transistors for producing a stable dc voltage
JPH04370965A (ja) 半導体装置
CA1234917A (en) Input structure for charge coupled devices with controllable input bias
KR930003573B1 (ko) 고체촬상장치
JP2786665B2 (ja) 電荷転送装置
JPS632365B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH06216363A (ja) 固体撮像装置
JPH0550032B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2877527B2 (ja) パルス電圧発生回路及びその駆動方法
JPH0125232B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US20030057510A1 (en) Capacitance element and boosting circuit using the same
JPH0439159B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3386289B2 (ja) 電荷転送装置
JPS60165760A (ja) 電荷転送装置
KR950008677B1 (ko) 반도체신호 전하 검출장치