JPS59132669A - 電荷転送装置 - Google Patents
電荷転送装置Info
- Publication number
- JPS59132669A JPS59132669A JP58007548A JP754883A JPS59132669A JP S59132669 A JPS59132669 A JP S59132669A JP 58007548 A JP58007548 A JP 58007548A JP 754883 A JP754883 A JP 754883A JP S59132669 A JPS59132669 A JP S59132669A
- Authority
- JP
- Japan
- Prior art keywords
- input
- transfer
- potential
- charge
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005036 potential barrier Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 abstract description 13
- 230000008859 change Effects 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 7
- 239000006185 dispersion Substances 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 239000007943 implant Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 230000027311 M phase Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 108010076504 Protein Sorting Signals Proteins 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Shift Register Type Memory (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58007548A JPS59132669A (ja) | 1983-01-20 | 1983-01-20 | 電荷転送装置 |
US06/543,533 US4621369A (en) | 1983-01-20 | 1983-10-20 | Input circuit for charge transfer device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58007548A JPS59132669A (ja) | 1983-01-20 | 1983-01-20 | 電荷転送装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59132669A true JPS59132669A (ja) | 1984-07-30 |
JPH0522382B2 JPH0522382B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-03-29 |
Family
ID=11668844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58007548A Granted JPS59132669A (ja) | 1983-01-20 | 1983-01-20 | 電荷転送装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US4621369A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
JP (1) | JPS59132669A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5086440A (en) * | 1989-04-18 | 1992-02-04 | Sony Corporation | Charge coupled device with enhanced input structure |
US5177772A (en) * | 1984-12-06 | 1993-01-05 | Sony Corporation | Charge coupled device with enhanced input structure |
US5247554A (en) * | 1987-01-16 | 1993-09-21 | Kabushiki Kaisha Toshiba | Charge detection circuit |
JPH0728029B2 (ja) * | 1987-05-21 | 1995-03-29 | 株式会社東芝 | 電荷転送素子 |
FR2625041B1 (fr) * | 1987-12-22 | 1990-04-20 | Thomson Csf | Dispositif de transfert de charges a abaissement de potentiel de transfert en sortie, et procede de fabrication de ce dispositif |
FR2626102B1 (fr) * | 1988-01-19 | 1990-05-04 | Thomson Csf | Memoire a transfert de charges et procede de fabrication de cette memoire |
NL8900540A (nl) * | 1989-03-06 | 1990-10-01 | Philips Nv | Halfgeleiderinrichting. |
US5115458A (en) * | 1989-09-05 | 1992-05-19 | Eastman Kodak Company | Reducing dark current in charge coupled devices |
JPH0821712B2 (ja) * | 1990-06-12 | 1996-03-04 | 株式会社東芝 | 電荷転送素子の入力バイアス回路 |
US5182647A (en) * | 1990-12-13 | 1993-01-26 | Eastman Kodak Company | High resolution charge-coupled device (ccd) camera system |
JP2768312B2 (ja) * | 1995-06-02 | 1998-06-25 | 日本電気株式会社 | 電荷転送装置、その駆動方法及び製造方法 |
JP2716011B2 (ja) * | 1995-08-09 | 1998-02-18 | 日本電気株式会社 | 電荷転送装置及びその製造方法 |
JP4695745B2 (ja) * | 1999-08-11 | 2011-06-08 | 富士フイルム株式会社 | 固体撮像素子及びその製造方法 |
JP2008060550A (ja) * | 2006-07-31 | 2008-03-13 | Sanyo Electric Co Ltd | 撮像装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS558007A (en) * | 1978-06-30 | 1980-01-21 | Toshiba Corp | Electric charge transferring device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3623132A (en) * | 1970-12-14 | 1971-11-23 | North American Rockwell | Charge sensing circuit |
US3789267A (en) * | 1971-06-28 | 1974-01-29 | Bell Telephone Labor Inc | Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel |
DE2501934C2 (de) * | 1974-01-25 | 1982-11-11 | Hughes Aircraft Co., Culver City, Calif. | Verfahren zum Betrieb eines ladungsgekoppelten Halbleiter-Bauelementes und ladungsgekoppeltes Halbleiter-Bauelement zur Durchführung dieses Verfahrens |
US4156818A (en) * | 1975-12-23 | 1979-05-29 | International Business Machines Corporation | Operating circuitry for semiconductor charge coupled devices |
US4139784A (en) * | 1977-08-02 | 1979-02-13 | Rca Corporation | CCD Input circuits |
US4140923A (en) * | 1977-11-25 | 1979-02-20 | Rca Corporation | Charge transfer output circuits |
US4277694A (en) * | 1979-10-01 | 1981-07-07 | Hughes Aircraft Company | Charge coupled device variable divider with integrating well |
-
1983
- 1983-01-20 JP JP58007548A patent/JPS59132669A/ja active Granted
- 1983-10-20 US US06/543,533 patent/US4621369A/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS558007A (en) * | 1978-06-30 | 1980-01-21 | Toshiba Corp | Electric charge transferring device |
Also Published As
Publication number | Publication date |
---|---|
JPH0522382B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-03-29 |
US4621369A (en) | 1986-11-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS59132669A (ja) | 電荷転送装置 | |
US5254487A (en) | Method of manufacturing high and low voltage CMOS transistors on a single chip | |
US4859624A (en) | Manufacturing method of semiconductor device having CCD and peripheral circuit | |
EP0080732A2 (en) | Semiconductor analog switch circuit using MOS transistors | |
US5306932A (en) | Charge transfer device provided with improved output structure | |
US5303053A (en) | Charge coupled device for overcoming an output voltage difference between different shift registers | |
JPH0391247A (ja) | Mosfet空乏デバイス | |
Keast et al. | CCD/CMOS process for integrated image acquisition and early vision signal processing | |
EP0409245B1 (en) | Charge transfer device provided with improved output structure | |
JP3208829B2 (ja) | 電荷結合装置 | |
WO1987001218A1 (en) | Integrated-circuit having two nmos depletion mode transistors for producing a stable dc voltage | |
JPH04370965A (ja) | 半導体装置 | |
CA1234917A (en) | Input structure for charge coupled devices with controllable input bias | |
KR930003573B1 (ko) | 고체촬상장치 | |
JP2786665B2 (ja) | 電荷転送装置 | |
JPS632365B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPH06216363A (ja) | 固体撮像装置 | |
JPH0550032B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JP2877527B2 (ja) | パルス電圧発生回路及びその駆動方法 | |
JPH0125232B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
US20030057510A1 (en) | Capacitance element and boosting circuit using the same | |
JPH0439159B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JP3386289B2 (ja) | 電荷転送装置 | |
JPS60165760A (ja) | 電荷転送装置 | |
KR950008677B1 (ko) | 반도체신호 전하 검출장치 |